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Crystals
Special Issues
Preparation, Characterization and Application of Zinc Oxide–Based Nanostructures
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Preparation, Characterization and Application of Zinc Oxide–Based Nanostructures

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (31 August 2019)

Special Issue Editors

Prof. Dr. Eliana Kamińska

E-Mail Website
Guest Editor
Institute of High Pressure Physics Unipress, Al. Prymasa Tysiaclecia 98, 01-142 Warsaw, Poland
Interests: GaN; ZnO; oxides; nitrides
Special Issues, Collections and Topics in MDPI journals
Dr. Michał Adam Borysiewicz

E-Mail Website
Guest Editor
Department of Micro- and Nanotechnology of Wide Bandgap Semiconductors
Interests: Nanostructure growth and design; Zinc oxide and related materials; Semiconductors

Special Issue Information

Dear Colleagues,

Within the last 30 years, zinc oxide has shown its manifold characteristics, making it interesting for numerous applications, such as optoelectronics, sensing, or transparent and flexible electronics, to name just a few, and resulting in many reports on its synthesis annually.

This Special Issue of Crystals aims to bring together a selected collection of reports highlighting the many synthetic routes towards application-specific nanostructures of ZnO and ZnO-based materials (AZO, ZTO, ZnMgO, ZnCoO, hybrid materials etc.). We would like to showcase ZnO and related materials as a group that lends itself to both bottom-up and top-down approaches to nanostructure design and fabrication. In particular, we wish to encourage submissions relating to the many morphological species, such as nanoflowers, nanorods, nanotrees, etc., as well as those utilizing thin film or epitaxial growth techniques with microelectronic-grade processing to tailor the resulting properties of the structures. Studies relating to nucleation and growth mechanisms and device-oriented works are welcome. We anticipate that the future readers of this Special Issue will be presented with a cross-section of works on ZnO nanostructures inspiring them in their future research.

Looking forward to your submissions.

Dr. Eliana Kaminska
Dr. Michał Adam Borysiewicz
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Zinc oxide and related materials
  • Nanostructure growth and design
  • Zinc oxide processing
  • Optical detectors and emitters
  • Sensors
  • Thin film transistors

Published Papers (3 papers)

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Research

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13 pages, 9139 KiB  
Article
Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods
by Nikola Basinova, Ondrej Cernohorsky, Jan Grym, Sarka Kucerova, Hana Faitova, Roman Yatskiv, Jan Vanis, Jozef Vesely and Jaroslav Maixner
Crystals 2019, 9(11), 566; https://doi.org/10.3390/cryst9110566 - 30 Oct 2019
Cited by 10 | Viewed by 3705
Abstract
One dimensional ZnO nanostructures prepared by favorable and simple solution growth methods are at the forefront of this research. Vertically oriented ZnO nanorods with uniform physical properties require high-quality seed layers with a narrow size distribution of the crystallites, strong c-axis orientation, and [...] Read more.
One dimensional ZnO nanostructures prepared by favorable and simple solution growth methods are at the forefront of this research. Vertically oriented ZnO nanorods with uniform physical properties require high-quality seed layers with a narrow size distribution of the crystallites, strong c-axis orientation, and low surface roughness and porosity. It has been shown that high quality seed layers can be prepared by the sol–gel process. The sol–gel process involves three essential steps: preparation of the sol, its deposition by dip coating, and thermal treatment comprising preheating and annealing. We put emphasis on the investigation of the heat treatment on the properties of the seed layers and on the vertical alignment of the nanorods. It was demonstrated that for the vertical alignment of the nanorods, the preheating step is crucial and that the temperatures reported in the literature have been too low. With higher preheating temperatures, conditions for the vertical alignment of the nanorods were achieved in both investigated annealing atmospheres in air and in argon. Full article
(This article belongs to the Special Issue Preparation, Characterization and Application of Zinc Oxide–Based Nanostructures)
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11 pages, 5171 KiB  
Article
Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors
by Aleksandra Seweryn, Rafal Pietruszka, Bartlomiej S. Witkowski, Aleksandra Wierzbicka, Rafal Jakiela, Piotr Sybilski and Marek Godlewski
Crystals 2019, 9(11), 554; https://doi.org/10.3390/cryst9110554 - 24 Oct 2019
Cited by 15 | Viewed by 4500
Abstract
Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and [...] Read more.
Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 °C to 250 °C were analyzed. It turned out that the film grown in the water-based process at 250 °C and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100–200 °C. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 °C and 150 °C in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 °C is a promising result, however lower electron mobility requires further optimization. Full article
(This article belongs to the Special Issue Preparation, Characterization and Application of Zinc Oxide–Based Nanostructures)
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Review

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29 pages, 5094 KiB  
Review
ZnO as a Functional Material, a Review
by Michał A. Borysiewicz
Crystals 2019, 9(10), 505; https://doi.org/10.3390/cryst9100505 - 28 Sep 2019
Cited by 241 | Viewed by 24144
Abstract
Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high [...] Read more.
Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research. Full article
(This article belongs to the Special Issue Preparation, Characterization and Application of Zinc Oxide–Based Nanostructures)
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