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Article

Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
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Author to whom correspondence should be addressed.
Crystals 2019, 9(11), 554; https://doi.org/10.3390/cryst9110554
Submission received: 30 August 2019 / Revised: 18 October 2019 / Accepted: 22 October 2019 / Published: 24 October 2019

Abstract

Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 °C to 250 °C were analyzed. It turned out that the film grown in the water-based process at 250 °C and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100–200 °C. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 °C and 150 °C in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 °C is a promising result, however lower electron mobility requires further optimization.
Keywords: zinc oxide; TCO films; thin layer zinc oxide; TCO films; thin layer
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MDPI and ACS Style

Seweryn, A.; Pietruszka, R.; Witkowski, B.S.; Wierzbicka, A.; Jakiela, R.; Sybilski, P.; Godlewski, M. Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors. Crystals 2019, 9, 554. https://doi.org/10.3390/cryst9110554

AMA Style

Seweryn A, Pietruszka R, Witkowski BS, Wierzbicka A, Jakiela R, Sybilski P, Godlewski M. Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors. Crystals. 2019; 9(11):554. https://doi.org/10.3390/cryst9110554

Chicago/Turabian Style

Seweryn, Aleksandra, Rafal Pietruszka, Bartlomiej S. Witkowski, Aleksandra Wierzbicka, Rafal Jakiela, Piotr Sybilski, and Marek Godlewski. 2019. "Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors" Crystals 9, no. 11: 554. https://doi.org/10.3390/cryst9110554

APA Style

Seweryn, A., Pietruszka, R., Witkowski, B. S., Wierzbicka, A., Jakiela, R., Sybilski, P., & Godlewski, M. (2019). Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors. Crystals, 9(11), 554. https://doi.org/10.3390/cryst9110554

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