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Crystals
Special Issues
Magnetic and Magnetoelectric Materials and Devices
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Magnetic and Magnetoelectric Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (1 December 2022) | Viewed by 4498

Special Issue Editors

Dr. Yao Wang

E-Mail Website1 Website2
Guest Editor
School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: magnetostrictive effect; magnetoelectric effect; magnetoimpedance; soft magnetic materials; magnetic sensor; magnetic memory
Prof. Dr. Jincai Chen

E-Mail Website
Guest Editor
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: magnetic recording technology; signal processing of magnetic device; information storage system
Dr. Lei Chen

E-Mail Website
Guest Editor
Collge of Artificial Intelligence, Chongqing University of Arts and Sciences, Chongqing 402171, China
Interests: magnetostrictive effect; magnetoelectric effect; magnetic sensor; energy harvester

Special Issue Information

Dear Colleagues,

Developing novel magnetic materials with interesting properties (e.g., the magnetostrictive and magnetoimpedance effects) and coupling them with ferroelectric materials (e.g., magnetoelectric composite and other multiferroic materials) are crucial to the design and fabrication of modern magnetic devices, such as magnetic sensors and memory. Specifically, the fabrication technology of soft magnetic materials (e.g., ribbon, thin film, and microwire), the modeling method of magnetic and multiferroic effects (e.g., magnetoimpedance, magnetostrictive, and magnetoelectric effect, etc.), the design of magnetic devices (e.g., sensors, memory, filters, and energy harvesters, etc.) and corresponding applications have been receiving increasing attention in recent decades.

The Special Issue titled “Magnetic and Magnetoelectric Materials and Devices” aims to account for advanced and innovative magnetic and magnetoelectric materials fabrication methods, physical principles, device designs, and corresponding applications. We look forward to publishing relevant and original high-quality research papers. Potential topical areas include—but are not limited to—the following:

  1. Magnetostrictive materials;
  2. Magnetoelectric composites;
  3. Fabrication of soft magnetic material and magnetoimpedance effects;
  4. Shape memory alloy;
  5. Magnetic sensor;
  6. Magnetic memory;
  7. Magnetoelectric energy harvester ;
  8. Magnetic recording technology;
  9. Novel artificial-intelligence-based algorithms for magnetic device applications;

Dr. Yao Wang
Prof. Dr. Jincai Chen
Dr. Lei Chen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • magnetostrictive effect
  • magnetoimpedance
  • soft magnetic material
  • magnetoelectric effect
  • shape memory alloy
  • multiferroic material
  • magnetic sensor
  • magnetic memory
  • magnetoelectric energy harvester

Published Papers (3 papers)

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Research

23 pages, 8694 KiB  
Article
Study of the Applicability of Magnetic Iron-Containing Nanoparticles in Hyperthermia and Determination of Their Resistance to Degradation Processes
by Assel Nazarova, Artem L. Kozlovskiy, Vyacheslav S. Rusakov, Kamila B. Egizbek, Maxim S. Fadeev, Bekzat A. Prmantayeva, Dorota Chudoba, Maxim V. Zdorovets and Kayrat K. Kadyrzhanov
Crystals 2022, 12(12), 1816; https://doi.org/10.3390/cryst12121816 - 13 Dec 2022
Cited by 1 | Viewed by 1241
Abstract
The article presents the results of evaluating the applicability of various types of iron-containing nanoparticles in magnetic hyperthermia, as well as determining the degradation resistance of nanoparticles. The objects of study were iron-containing nanoparticles obtained by chemical precipitation and subsequent modification with gold, [...] Read more.
The article presents the results of evaluating the applicability of various types of iron-containing nanoparticles in magnetic hyperthermia, as well as determining the degradation resistance of nanoparticles. The objects of study were iron-containing nanoparticles obtained by chemical precipitation and subsequent modification with gold, gadolinium, and neodymium. The main methods for studying the properties of the synthesized nanoparticles were transmission electron microscopy, X-ray phase analysis, and Mössbauer spectroscopy. Evaluation of the efficiency of the use of the synthesized nanoparticles in magnetic hyperthermia showed that Fe3O4@GdFeO3 nanoparticles, for which the specific absorption rate was more than 120 W/g, have the highest efficiency. An assessment of the resistance of the synthesized nanoparticles to corrosion in water at different temperatures showed that Fe2O3@NdFeO3 and Fe3O4@GdFeO3 nanoparticles have the highest resistance to degradation. It has been established that in the case of the initial Fe3O4 nanoparticles, the degradation processes are accompanied by partial destruction of the particles, followed by amorphization and destruction, while for Fe2O3@NdFeO3 and Fe3O4@GdFeO3 nanoparticles, the degradation processes proceed much more slowly, due to the presence of interfacial boundaries, which slow down the corrosion processes. The obtained results of corrosion tests in aqueous media make it possible to predict the area and time frame of applicability of iron-containing nanoparticles when using them in the biomedical direction, as well as to determine storage conditions. Full article
(This article belongs to the Special Issue Magnetic and Magnetoelectric Materials and Devices)
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12 pages, 636 KiB  
Article
Modeling of Spin Transport in Hybrid Magnetic Tunnel Junctions for Magnetic Recording Applications
by Debajit Deb and Bikram Kishore Mahajan
Crystals 2022, 12(10), 1411; https://doi.org/10.3390/cryst12101411 - 6 Oct 2022
Cited by 2 | Viewed by 1398
Abstract
We have demonstrated modeling of phonon and defect-induced spin relaxation length (LS) in Fe3O4 and organic semiconductor (OSC) Alq3. LS of Alq3 decreases with enhanced disorder and film thickness at a low film width [...] Read more.
We have demonstrated modeling of phonon and defect-induced spin relaxation length (LS) in Fe3O4 and organic semiconductor (OSC) Alq3. LS of Alq3 decreases with enhanced disorder and film thickness at a low film width regime. Exponential change of LS at low width regime is found for Alq3 which is, however, absent for Fe3O4 indicating comparable spin-dependent scattering and LS in Fe3O4. LS also decreases with spin-flip probability both for Alq3 and Fe3O4. Voltage-dependent tunnel magnetoresistance (TMR) response in Fe3O4/Alq3/Co and La0.7Sr0.3MnO3 (LSMO)/Alq3/Co hybrid magnetic tunnel junction (MTJ) devices has been attributed to modified spin filter effect across magnetic/OSC junction at high bias regime. TMR reduction with Alq3 thickness for Fe3O4 device has been attributed to spin relaxation at the organic spacer layer. A low bias peak from differential TMR indicates spin-polarized injection for both MTJ devices. Enhanced in-plane spin transfer torque for both MTJ is associated with modified spin filtering at magnetic/OSC junctions. Lower TMR signal for LSMO device indicates reduced tunneling and enhanced carrier injection across the OSC, which is also supported by the band structure profile. The TMR response observed from simulation results matches well with previously reported experimental results. Higher TMR response for Fe3O4 device indicates the possibility of device employment in room temperature magnetic recording applications. Full article
(This article belongs to the Special Issue Magnetic and Magnetoelectric Materials and Devices)
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10 pages, 2392 KiB  
Article
Writer Performance Optimization with Shingled Rounded Corner and Exchange Coupled Composite Media
by Guoqiang Xie and Yuan Wu
Crystals 2022, 12(9), 1261; https://doi.org/10.3390/cryst12091261 - 6 Sep 2022
Viewed by 1228
Abstract
The shingled magnetic recording (SMR) with exchange coupled composite (ECC) media is a feasible method to achieve the areal density of multi-Tera-bit/in2. However, a rounded corner is inevitable due to deviations from the fabrication process of a shingled writer. The rounded [...] Read more.
The shingled magnetic recording (SMR) with exchange coupled composite (ECC) media is a feasible method to achieve the areal density of multi-Tera-bit/in2. However, a rounded corner is inevitable due to deviations from the fabrication process of a shingled writer. The rounded corner is modeled and characterized by two parameters: the rounded angle (θ) and the corner length (L). This paper investigates the influence of the rounded corner effect on the field distribution, writing capability, bit error rate (BER), and erase band width (EBW) of SMR. The analysis suggests that an optimized structure of rounded corner can increase the write field gradient and reduce the stray field to avoid adjacent track encroachment. The results show that if the shingled rounded corner writer with θ = 40° and L = 3 nm is elaborately constructed, the write field gradient can attain a peak value of 552 Oe/nm, and the write performance of the recording system can be improved. Full article
(This article belongs to the Special Issue Magnetic and Magnetoelectric Materials and Devices)
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