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Nanowires and Quantum Dots for IoT Applications

Special Issue Information

Keywords

  • nanowires, nanorods, and quantum dots growth
  • fundamental properties of novel nanowires and quantum dots structures (III-V, Ge(Si)Sn, III-V on Si substrate, etc.)
  • nanowires and quantum dots based optoelectronic devices and active layers (LED, photodetector, solar cells, etc.)
  • nanowire transistor and nanowire sensors
  • 3D integration
  • modeling nanowire/quantum dots electronic and optical properties
  • physico-chemical characterizations
  • strain engineered nanostructures
  • luminescence properties of nanowires and quantum dots
  • nanowire/quantum dots made from CMOS-compatible direct band gap materials (GeSn, GePb, GeC, etc.)

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Published Papers

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Crystals - ISSN 2073-4352