Silicon and Germanium Crystals for Applications in Modern Physics

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 2757

Special Issue Editor


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Guest Editor
National Institute of Nuclear Physics (INFN), Ferrara, Italy
Interests: X-ray diffraction; Laue lenses; channeling; beam collimation; beam steering; coheret interactions; crystal machining

Special Issue Information

Dear Colleagues,

Silicon and germanium crystals are widely used in a broad range of applications in modern physics. Indeed, in addition to the traditional uses, e.g., as semiconductors and photovoltaic cells, many other applications are based on Si and Ge, especially because these materials can be produced with high crystallographic perfection at reasonable costs and because they can be machined and micro-machined with very high precision. Consequently, Si and Ge have become the prime elements for several applications in modern physics, such as high-performance radiation detection, the optics for X- and γ-rays, the deflection and collimation of charged particle beams through the channeling phenomenon, the realization of detectors and sensors, and applications based on coherent interactions with incident radiation and crystalline lattices.

The purpose of this Special Issue is to provide an update on the state of the art and on the future developments of these and other applications in modern physics that are based on silicon and germanium crystals.

Dr. Riccardo Camattari
Guest Editor

Manuscript Submission Information

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Keywords

  • X-ray diffraction
  • Coherent interaction
  • Detectors and sensors
  • Channeling
  • Crystal micromachining

Published Papers (1 paper)

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Review

16 pages, 1351 KiB  
Review
Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview
by Paolo Sberna, Piet X. Fang, Changming Fang and Stoyan Nihtianov
Crystals 2021, 11(2), 108; https://doi.org/10.3390/cryst11020108 - 26 Jan 2021
Cited by 2 | Viewed by 2243
Abstract
The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the [...] Read more.
The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed. Full article
(This article belongs to the Special Issue Silicon and Germanium Crystals for Applications in Modern Physics)
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