Wide-Bandgap Semiconductors
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 32104
Special Issue Editors
Interests: silicon carbide power devices; gallium nitride epitaxial growth; diamond devices; gallium oxide materials and devices
Interests: III-V semiconductor; deep ultraviolet LED; boron nitride materials and devices; UV detector
Interests: wide band gap semiconductors; III-V heterostructures; metal-semiconductors interface
Interests: theories of x-ray diffraction and crystal growth; x-ray diffraction from crystal lattice defects; III-V nanowires for optoelectronics
Special Issue Information
Dear Colleagues,
Wide-bandgap semiconductor materials have unique electrical, optical, and magnetic properties. Their devices have excellent performance and broad application prospects in many fields, which can improve the working temperature limit of power devices and make them work in worse environments; improve the power and efficiency of devices and, consequently, the performance of equipment; and broaden the luminous spectrum and realize full-color displays. With the gradual maturation of material growth and device preparation technology, wide-band semiconductor materials and devices already hold overwhelming superiority in the electronic information industry. The development of wide-bandgap semiconductors, however, does not only offer opportunities but also faces great challenges. With the increasing requirements of optoelectronic devices, power devices, and microwave devices for high frequency, high speed, high temperature, and high power, it is urgent to develop and improve the existing materials and seek new ones. We know that 3rd-generation semiconductor materials are mainly wide-bandgap semiconductors represented by GaN and SiC. Ultrawide-bandgap semiconductor materials include AlN, Ga2O3, diamond, BN, and so on. The introduction of these new materials represents a significant development and supplements semiconductor systems. At this stage, the growth, fabrication, and characterization of wide-bandgap semiconductor materials and devices need to be strengthened and improved. It is also necessary to systematically summarize recent works so that researchers in this field can learn from each other and jointly promote the development of wide-bandgap semiconductor materials and devices.
Dr. Mingsheng Xu
Dr. Qiang Li
Dr. Giuseppe Greco
Dr. Vladimir M. Kaganer
Guest Editors
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Keywords
- III-V semiconductors (GaN, etc.)
- SiC materials and devices
- AlN crystals and templates
- BN growth and fundamental properties
- heterostructure physics
- first-principles calculation
- deep UV–LEDs
- photodetectors
- nanostructures and nanodevices
- diamonds materials and devices
- gallium oxide materials and devices
- green and blue laser diodes
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