New Semiconductor Materials, Devices, Power Applications, and Radiation Effects
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (15 March 2024) | Viewed by 2068
Special Issue Editors
Interests: GaN-based power devices; device reliability; power applications
Interests: SiC power devices; device reliability; mechanism of device radiation effects
Special Issue Information
Dear Colleagues,
In recent years, in the topic of power devices and integrated circuits, researchers have carried out a large number of scientific and engineering applications in new materials, new structural devices and power applications, making important breakthroughs. New materials include wide bandgap semiconductors (GaN, SiC), ultra-wide band gap semiconductors (Ga2O3, diamond, AlGaN, AlN), carbon-based materials and other semiconductor materials. New structural devices include lateral HEMT, grooved VDMOSFET, trench MOSFET, vertical Fin MOSFET, super junction, etc. New semiconductor materials have superior characteristics, such as high breakdown electric field, low specificity of resistance and high temperature resistance. Combined with innovations in device structure, they can make power circuits, such as DC–DC and AC–DC, more efficient, smaller and more powerful. In addition, new materials, devices and circuits have also received extensive attention in total dose, single event effect and other radiation aspects.
This topic focuses on the direction of new materials and new structural devices, providing new ideas for the development of power integrated circuits and radiation applications. The submission of high-quality original research and review articles in this field is welcomed. The topics of interest include, but are not limited to:
- Wide bandgap semiconductor (SiC, GaN);
- Ultra-wide bandgap semiconductor (Ga2O3, diamond, AlGaN, AlN, BN);
- Compound semiconductor materials and devices;
- Power conversion circuits;
- Packaging of wide bandgap semiconductor devices;
- Devices and circuits reliability;
- Total dose and single event effects.
Dr. Shenglei Zhao
Dr. Hao Yuan
Dr. Lei Shu
Guest Editors
Manuscript Submission Information
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Keywords
- wide bandgap devices
- power conversion circuits
- single event effects
- gallium nitride
- silicon carbide
