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Electronics
Special Issues
Optoelectronics, Energy and Integration
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Optoelectronics, Energy and Integration

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: 20 August 2025 | Viewed by 640

Special Issue Editors

Dr. Baiquan Liu

E-Mail Website
Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Interests: organic light-emitting diodes; perovskite light-emitting diodes; quantum-dot light-emitting diodes; organic electronics; flexible; solution processesd; solar cells
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Menglan Lv

E-Mail Website
Guest Editor
School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, China
Interests: organic photoelectric materials and devices
Dr. Swee Tiam Tan

E-Mail Website
Guest Editor
School of Energy and Chemical Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, Sepang 43900, Selangor, Malaysia
Interests: semiconductor materials and devices; optoelectronic materials-devices-systems; LED lighting and displays

Special Issue Information

Dear Colleagues,

The field of optoelectronics and energy materials has seen rapid growth in the past decade, driven by the demand for high-performance devices in a wide range of applications, including light-emitting diodes, solar cells, lasers, detectors, sensors, and so on. Emerging concepts, strategies and techniques are believed to be beneficial to the syntheses of optoelectronic and energy materials, the use of theoretical simulations, the understanding of device engineering, the optimization of film morphologies, the exploration of interfacial contacts, the innovation of device architectures, and the investigation of working mechanisms. The goal of this Special Issue is to cover the recent developments in the field of optoelectronics and energy devices and integrations, including novel concepts, fundamental research, and theoretical results.

Topics of interest include, but are not limited to, the following:

⮚ Synthetic and characterization methodologies for optoelectronics and energy materials;
⮚ Novel optoelectronic and energy semiconductors;
⮚ Working mechanisms of optoelectronic and energy devices;
⮚ Integration of optoelectronic devices in display, lighting, communication, and energy harvesting;
⮚ Theoretical modeling;
⮚ Challenges in development of optoelectronic materials, devices, and integrations.

Dr. Baiquan Liu
Prof. Dr. Menglan Lv
Dr. Swee Tiam Tan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • energy
  • material
  • device
  • mechanism
  • integration

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Published Papers (1 paper)

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Research

15 pages, 3813 KiB  
Article
Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization
by Huajian Zheng, Zhuohang Ye, Baiquan Liu, Mengye Wang, Li Zhang and Chuan Liu
Electronics 2025, 14(7), 1257; https://doi.org/10.3390/electronics14071257 - 22 Mar 2025
Viewed by 303
Abstract
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/dielectric interface. However, their applications in the monolithic integration of scaled devices [...] Read more.
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/dielectric interface. However, their applications in the monolithic integration of scaled devices encounter challenges stemming from the interaction between the pre-treated channel layer and its covering dielectric. Here, we demonstrate the successful realization of a scaled back-end-of-line (BEOL) compatible dual-gate indium–gallium–zinc oxide (IGZO) transistor with a channel length (Lch) scaled down to 150 nm and a channel thickness (Tch) of 4.2 nm. After precisely adjusting the metal ratio to In0.24Ga0.58Zn0.18O and employing O3 as an oxygen precursor for the deposition of Al2O3 as the top-gate dielectric layer, a high maximum current of 1.384 mA was attained under top-gate control, while a high current of 1.956 mA was achieved under bottom-gate control. Additionally, a high current on/off ratio (Ion/off > 109) was achieved for the dual gate. Careful calculations reveal that the field-effective mobility (μeff) reaches 11.68 cm2V−1s−1 under top-gate control and 22.46 cm2V−1s−1 under bottom-gate control. We demonstrate excellent dual-gate low-voltage modulation performance, with a high current switch ratio of 3 × 105 at Lch = 300 nm and 2 × 104 at Lch = 150 nm achieved by only 1 V modulation voltage, accompanied by a normalized current variation higher than 106. Overall, our devices show the remarkable electrical performance characteristics, highlighting their potential applications in high-performance electronic circuits. Full article
(This article belongs to the Special Issue Optoelectronics, Energy and Integration)
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