Optoelectronics, Energy and Integration

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: 20 August 2025 | Viewed by 507

Special Issue Editors


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Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Interests: organic light-emitting diodes; perovskite light-emitting diodes; quantum-dot light-emitting diodes; organic electronics; flexible; solution processesd; solar cells
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Guest Editor
School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, China
Interests: organic photoelectric materials and devices

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Guest Editor
School of Energy and Chemical Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, Sepang 43900, Selangor, Malaysia
Interests: semiconductor materials and devices; optoelectronic materials-devices-systems; LED lighting and displays

Special Issue Information

Dear Colleagues,

The field of optoelectronics and energy materials has seen rapid growth in the past decade, driven by the demand for high-performance devices in a wide range of applications, including light-emitting diodes, solar cells, lasers, detectors, sensors, and so on. Emerging concepts, strategies and techniques are believed to be beneficial to the syntheses of optoelectronic and energy materials, the use of theoretical simulations, the understanding of device engineering, the optimization of film morphologies, the exploration of interfacial contacts, the innovation of device architectures, and the investigation of working mechanisms. The goal of this Special Issue is to cover the recent developments in the field of optoelectronics and energy devices and integrations, including novel concepts, fundamental research, and theoretical results.

Topics of interest include, but are not limited to, the following:

⮚ Synthetic and characterization methodologies for optoelectronics and energy materials;
⮚ Novel optoelectronic and energy semiconductors;
⮚ Working mechanisms of optoelectronic and energy devices;
⮚ Integration of optoelectronic devices in display, lighting, communication, and energy harvesting;
⮚ Theoretical modeling;
⮚ Challenges in development of optoelectronic materials, devices, and integrations.

Dr. Baiquan Liu
Prof. Dr. Menglan Lv
Dr. Swee Tiam Tan
Guest Editors

Manuscript Submission Information

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Keywords

  • optoelectronics
  • energy
  • material
  • device
  • mechanism
  • integration

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Published Papers (1 paper)

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Research

15 pages, 3813 KiB  
Article
Dual-Gate Metal-Oxide-Semiconductor Transistors: Nanoscale Channel Length Scaling and Performance Optimization
by Huajian Zheng, Zhuohang Ye, Baiquan Liu, Mengye Wang, Li Zhang and Chuan Liu
Electronics 2025, 14(7), 1257; https://doi.org/10.3390/electronics14071257 - 22 Mar 2025
Viewed by 185
Abstract
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/dielectric interface. However, their applications in the monolithic integration of scaled devices [...] Read more.
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/dielectric interface. However, their applications in the monolithic integration of scaled devices encounter challenges stemming from the interaction between the pre-treated channel layer and its covering dielectric. Here, we demonstrate the successful realization of a scaled back-end-of-line (BEOL) compatible dual-gate indium–gallium–zinc oxide (IGZO) transistor with a channel length (Lch) scaled down to 150 nm and a channel thickness (Tch) of 4.2 nm. After precisely adjusting the metal ratio to In0.24Ga0.58Zn0.18O and employing O3 as an oxygen precursor for the deposition of Al2O3 as the top-gate dielectric layer, a high maximum current of 1.384 mA was attained under top-gate control, while a high current of 1.956 mA was achieved under bottom-gate control. Additionally, a high current on/off ratio (Ion/off > 109) was achieved for the dual gate. Careful calculations reveal that the field-effective mobility (μeff) reaches 11.68 cm2V−1s−1 under top-gate control and 22.46 cm2V−1s−1 under bottom-gate control. We demonstrate excellent dual-gate low-voltage modulation performance, with a high current switch ratio of 3 × 105 at Lch = 300 nm and 2 × 104 at Lch = 150 nm achieved by only 1 V modulation voltage, accompanied by a normalized current variation higher than 106. Overall, our devices show the remarkable electrical performance characteristics, highlighting their potential applications in high-performance electronic circuits. Full article
(This article belongs to the Special Issue Optoelectronics, Energy and Integration)
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