GaN-Based Electronic Materials and Devices
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: 15 February 2025 | Viewed by 118
Special Issue Editor
Special Issue Information
Dear Colleagues,
Over the last decade, GaN-based electronic devices for power or radio frequency (RF) applications have been extensively researched due to their extraordinary material properties. Firstly, it is very important to grow high-quality GaN-based epitaxial layers on foreign substrates such as Si (111) and SiC by MOCVD, MBE, HVPE, etc. Based on these high-quality epitaxial layers, the electronic devices for high-power and high-frequency applications will be fabricated with an optimized fabrication process. In addition, to improve the device’s performance, the design and layout of these devices are very important to the simulation tool. GaN-based 3D nanostructured electronics devices such as FinFET, nanowires, and nanosheets have been studied with the advantages of device structure for gate controllability. This Special Issue will publish research papers and review articles that focus on recent developments in the GaN-based epitaxial layer and GaN-based electronic device technology.
The following topics will be explored in this Special Issue:
(1) Growth and characterization of GaN-based epitaxial layers.
(2) GaN-based power electronics for high-power applications.
(3) GaN-based RF HEMT for high-frequency applications.
(4) GaN-based 3D nanostructured electronic devices (FinFET, nanowires, and nanosheets).
(5) Simulation-based research of GaN HEMT.
Prof. Dr. Jeong-Gil Kim
Guest Editor
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- GaN HEMT
- power electronics
- RF HEMT
- 3D nanostructured devices
- TCAD simulation
Benefits of Publishing in a Special Issue
- Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
- Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
- Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
- External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
- e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.
Further information on MDPI's Special Issue polices can be found here.
