Microelectronics Reliability
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".
Deadline for manuscript submissions: closed (30 November 2021) | Viewed by 12695
Special Issue Editors
Interests: semiconductor reliability; DRAM test and reliability; radiation effects
Special Issue Information
Dear Colleagues,
With the advent of life-critical technologies such as autonomous vehicles, microelectronics’ reliability and requirements have increased in modern electronics. Recent research in reliability areas has rapidly expanded from low-level devices such as diodes and transistors to the reliabilities of various aspects of products: components, systems, and manufacturing processes. Microelectronics’ reliability should not be handled as a standalone issue that mainly deals with device degradation due to structural changes in materials (i.e., fundamental mechanism-oriented reliability). In order to overcome the challenges from emerging technologies that deal with life and security data, reliability topics should be perceived and researched as problems in combinations of associated devices, circuits, systems, and even system software. Such a multilevel approach of integrating devices into systems is essential. The goal of this Special Issue of Electronics is to present state-of-the-art investigations on various reliability technologies and cover all levels of integrated systems and manufacturing:
- materials and processes;
- technologies (CMOS, BiCMOS, etc.);
- transistors;
- components (SRAM, DRAM, sensors, power electronics, etc.);
- integrated circuits (processors, controllers, etc.);
- integrated systems (communication, graphic module, etc.); and
- packages.
Topics of interest on reliability include, but are not limited to:
- traditional reliability topics (TDDB, HCT, EM, etc.);
- life testing;
- accelerated testing;
- maintainability;
- failure mechanisms;
- case studies of physical failures;
- mitigation (proactive and passive);
- reliability models;
- stress mechanisms;
- interconnection issues;
- reliability due to radiation effects;
- telemetry, on-die sensors, and instant health monitoring for fast reliability loops.
Prof. Dr. Sanghyeon Baeg
Dr. Shi-Jie Wen
Guest Editors
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Keywords
- semiconductor reliability
- failure mechanisms
- reliability models
- physical failure
- stress mechanisms
- mitigation
- radiation effects
- telemetry on-die sensors, instant health monitoring for fast reliability loops
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