Novel Magnetic Materials and Magnetism in Spintronics

A special issue of Inventions (ISSN 2411-5134). This special issue belongs to the section "Inventions and Innovation in Biotechnology and Materials".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 1194

Special Issue Editor


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Guest Editor
Department of Electrical Engineering, Jiangnan University, Wuxi 214122, China
Interests: integrated circuit design; modeling and fabrication of semiconductor devices; spintronic devices; magnetic random access memory (MRAM) design
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Special Issue Information

Dear Colleagues,

As the field of spintronics undergoes swift advancements, an increasing array of sophisticated magnetic materials is being unveiled, showcasing parallel growth in magnetism. This Special Issue within Inventions, published by MDPI, spotlights key topics such as the synthesis methodologies for magnetic materials, especially nanoscale materials, advancements in 2D magnetic materials and 2D spintronic devices, techniques for measuring and characterizing magnetic materials, applications of magnetic materials, innovations in spintronic devices, and the exploration of magnetism associated with novel magnetic materials and spintronic devices.

Prof. Dr. Yanfeng Jiang
Guest Editor

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Keywords

  • novel magnetic materials
  • magnetism
  • spintronics and spintronic devices
  • magnetic random access memory (MRAM) design
  • integrated circuit design
  • modeling and fabrication of semiconductor devices

Published Papers (1 paper)

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Research

15 pages, 6067 KiB  
Article
TCAD Modelling of Magnetic Hall Effect Sensors
by Vartika Pandey, Vlad Marsic, Petar Igic and Soroush Faramehr
Inventions 2024, 9(4), 72; https://doi.org/10.3390/inventions9040072 - 10 Jul 2024
Viewed by 543
Abstract
In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. [...] Read more.
In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts. Full article
(This article belongs to the Special Issue Novel Magnetic Materials and Magnetism in Spintronics)
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