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Multiple Functional Applications of Wide Bandgap Semiconductor
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Multiple Functional Applications of Wide Bandgap Semiconductor

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 February 2024) | Viewed by 4307

Special Issue Editor

Dr. Iman Roqan

E-Mail Website
Guest Editor
Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Interests: II-nitrides; oxides; UV applications; LED; optelectrnics; photodiodes; nanostrcutres

Special Issue Information

Dear Colleagues,

This Special Issue is devoted to reporting the recent developments in wide bandgap semiconductors (WBGSs)-based technology and growth. Deep-ultraviolet (DUV)-based optoelectronic devices, such as photodetectors, light-emitting devices, and sensors, are drawing considerable attention from researchers and industry practitioners due to their wide range of potential applications, including high-temperature flame and missile launch detection, environmental monitoring, imaging techniques, chemical analysis, ozone monitoring, space-to-space communications, and biological threat detection, medical treatments, and air, food and water sterilization. Several attempts to fabricate DUV photodetectors or sensing devices have been made to date; however, many issues still need further investigation to enhance this technology, including the following: (i) Performance of the resulting devices. Most WBGS technology is based on p-n junction didoes. However, WBGS with stable p-type conductivity are lacking; (ii) A complex WBGS fabrication process that requires expensive technologies significantly increases commercial device costs.

This issue will focus on the following topics: understanding the fundamental science of structural, optical, magnetic and electrical characterization; the role of defects and strain in modulating the material properties; developed growth and fabrication methods; methodologies that can be used to understand the fundamental science; device fabrication and analyses; novel WBGS such as perovskite, quantum dots, and 2D materials; device characterizations including optoelectronics; sensors, electronics and photonics.

Dr. Iman Roqan
Guest Editor

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Keywords

  • growth, synthesis and fabrication
  • P-type doping
  • defects and impurities and structural analyses
  • electrical properties and device efficiency
  • methods of analyses
  • carrier dynamics and optical properties
  • devices: optoelectronics, electronics and photonics, photovoltaics
  • novel materials

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Published Papers (2 papers)

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Research

20 pages, 4563 KiB  
Article
Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors
by Mohamed A. Basyooni, A. E. H. Gaballah, Mohammed Tihtih, Issam Derkaoui, Shrouk E. Zaki, Yasin Ramazan Eker and Şule Ateş
Materials 2023, 16(7), 2766; https://doi.org/10.3390/ma16072766 - 30 Mar 2023
Cited by 6 | Viewed by 2118
Abstract
Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an [...] Read more.
Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON–OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm−2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord’s methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I–V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces. Full article
(This article belongs to the Special Issue Multiple Functional Applications of Wide Bandgap Semiconductor)
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16 pages, 4808 KiB  
Article
Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method
by Nur Amaliyana Raship, Siti Nooraya Mohd Tawil, Nafarizal Nayan and Khadijah Ismail
Materials 2023, 16(6), 2392; https://doi.org/10.3390/ma16062392 - 16 Mar 2023
Cited by 9 | Viewed by 1739
Abstract
Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a [...] Read more.
Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor η of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes. Full article
(This article belongs to the Special Issue Multiple Functional Applications of Wide Bandgap Semiconductor)
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