Wide Band Gap Semiconductors: From Growth to Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (20 July 2022) | Viewed by 2792
Special Issue Editors
Interests: DFT; modelling; first principles calculations; semiconductors
Special Issues, Collections and Topics in MDPI journals
Interests: advanced systems; thin-films; electrical characterization; defect engineering; DLTS
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The development of efficient and environmentally friendly semiconductor devices is a great challenge. Among the materials of present and future perspective are wide bandgap semiconductor materials. The recent progress in crystal growth, theoretical modeling, understanding of as-grown and/or intentionally introduced defects, and numerous applications has offered a new perspective for wide bandgap semiconductors such as SiC, GaN, Ga2O3, diamond, and others.
This Special Issue of Materials is dedicated to all aspects related to the growth, material characterization, modeling, and applications of wide bandgap semiconductors with the aim to provide an overview of the issues of current interest and future perspectives. Researchers working in the field are invited to contribute.
Potential topics of interest include but are not limited to the following: growth and characterization techniques of crystalline materials; wide bandgap semiconductors; SiC, GaN, Ga2O3, diamond; device applications; modeling, first-principles calculations, etc.; deep level transient spectroscopy; electron paramagnetic resonance.
Dr. José Coutinho
Dr. Ivana Capan
Guest Editors
Manuscript Submission Information
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Keywords
- Wide bandgap semiconductors
- Defects
- Devices
- Modeling
- Characterization
