Interfaces in Memristor
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 2372
Special Issue Editor
Interests: photoelectron spectroscopy; surface science; oxide semiconductors; optoelectronics; nanotechnology; renewable energies; resistive switching
Special Issue Information
Dear Colleagues,
Memristor properties are often governed by their interfaces to electrodes. These interfaces determine built-in electrical potentials and barriers, the fundamentals of electrical transport. Resistive switching involves modification of barriers, mainly by changes in intrinsic defect concentrations (valence change mechanism) or by the transport of material from the contacts (electrochemical mechanism). The lack of industrial applications of memristors shows that we are still far from effective memristor design rules. Since “The interface is the device” (Nobel laureate Herbert Kroemer), this Special Issue is focused on novel experimental and theoretic insight into the chemical and electronic nature of interfaces in memristors.
Dr. Jonas Deuermeier
Guest Editor
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Keywords
- resistive switching
- memristors
- oxides
- interface analysis
- photoelectron spectroscopy (XPS)
- transmission electron microscopy (TEM)
- scanning tunneling microscopy (STM)
- atomic force microscopy (AFM)
- In situ/in operando
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