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Advances in Quantum Science: Quantum Computing, Quantum Sensors and Quantum...
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Advances in Quantum Science: Quantum Computing, Quantum Sensors and Quantum Communications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".

Deadline for manuscript submissions: closed (20 November 2023) | Viewed by 5208

Special Issue Editors

Prof. Dr. Enrico Prati

E-Mail Website
Guest Editor
Dipartimento di Fisica, Università di Milano, Via Celoria 16, 20133 Milano, Italy
Interests: single-atom devices; silicon quantum devices; quantum computing; machine learning; quantum artificial intelligence
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Takahiro Shinada

E-Mail Website
Guest Editor
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8572, Japan
Interests: single-atom devices; silicon quantum devices; semiconductor devices; spintronics devices

Special Issue Information

Dear Colleagues,

Quantum technologies are deeply rooted in suitably tailored physical substrates. The reason for this can be either the direct encoding of information in quantum states, as happens in quantum computers and communications, or the coupling of quantum states with macroscopic equipment, as happens for quantum sensors and quantum metrology. Then, the appropriate choice and the engineering of a suitable material can make the difference in driving quantum science to quantum technologies. Materials for quantum science range from quantum computing (semiconductor host of quantum dots, superconductors, defects in semiconductors, etc.) and quantum communications (single-photon sources and detectors) to quantum metrology (absolute photon counters) and quantum sensors (solid-state spins, superconductors and SQUIDs, optomechanics, etc.).

Conversely, quantum technologies can be taken advantage of to develop materials. For example, quantum computers and quantum ellipsometry can be used in material design. Aside from traditional investigation methods, novel design methods involve deep and machine learning, quantum computers, and HPC. This Special Issue covers both the development of materials to boost quantum technologies, and quantum technologies to empower the search for and refinement of materials.

The field is rapidly advancing into new areas of discovery. It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. Dr. Enrico Prati
Prof. Dr. Takahiro Shinada
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum materials
  • deep learning designed materials
  • materials for quantum technologies
  • quantum computer designed materials
  • single-photon sources
  • single-photon emitters
  • superconductive qubits
  • semiconductor qubits

Published Papers (2 papers)

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Research

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10 pages, 2159 KiB  
Article
Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths
by Giulio Tavani, Chiara Barri, Erfan Mafakheri, Giorgia Franzò, Michele Celebrano, Michele Castriotta, Matteo Di Giancamillo, Giorgio Ferrari, Francesco Picciariello, Giulio Foletto, Costantino Agnesi, Giuseppe Vallone, Paolo Villoresi, Vito Sorianello, Davide Rotta, Marco Finazzi, Monica Bollani and Enrico Prati
Materials 2023, 16(6), 2344; https://doi.org/10.3390/ma16062344 - 15 Mar 2023
Viewed by 1657
Abstract
Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength [...] Read more.
Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si. Such sources are fabricated with a fully-compatible CMOS process on a 220 nm-thick silicon-on-insulator (SOI) wafer, the common standard in silicon photonics. The implantation depth is tuned to match the center of the silicon layer. The erbium and oxygen co-doping ratio is tuned to optimize the electroluminescence signal. We fabricate a batch of Er:O diodes with surface areas ranging from 1 µm × 1 µm to 50 µm × 50 µm emitting 1550 nm photons at room temperature. We demonstrate emission rates around 5 × 106 photons/s for a 1 µm × 1 µm device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated silicon photon sources suitable for arbitrary-statistic-tolerant QKD protocols. Full article
(This article belongs to the Special Issue Advances in Quantum Science: Quantum Computing, Quantum Sensors and Quantum Communications)
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Review

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20 pages, 4101 KiB  
Review
Gate Control of Superconductivity in Mesoscopic All-Metallic Devices
by Claudio Puglia, Giorgio De Simoni and Francesco Giazotto
Materials 2021, 14(5), 1243; https://doi.org/10.3390/ma14051243 - 5 Mar 2021
Cited by 7 | Viewed by 3163
Abstract
The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at [...] Read more.
The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect. Full article
(This article belongs to the Special Issue Advances in Quantum Science: Quantum Computing, Quantum Sensors and Quantum Communications)
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