materials-logo

Journal Browser

Journal Browser

Advances in Magnetoelectric Multiferroic Materials and Heterostructures: Properties, Techniques and Devises

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 January 2023) | Viewed by 2390

Special Issue Editor


E-Mail Website
Guest Editor
Fachgebiet Technische Physik I, Technische Universität Ilmenau, Weimarer Straße 32, 98693 Ilmenau, Germany
Interests: optical properties; ultrafast dynamics in solid state; semiconductors; ferroelectric/ferromagnetic materials; microcavities; nanostructures; Bose-Einstein condensates; lasing; ellipsometry

Special Issue Information

Dear Colleagues,

Switching magnetic polarization by electric signals and vice versa is currently a topic of intensive research regarding technologic application but also regarding a fundamental physics-related understanding of the magneto-electric-coupling mechanism. The aim here stems from memory applications via multijunction information processing and sensors to quantum mechanically coupled states for quantum information technology. In recent years, great progress has been achieved in fabrication technology, experimental characterization, and theoretical understandings of materials and heterostructures, utilizing various coupling mechanisms. In this context, generally speaking about magnetoelectric and multiferroic materials, magneto-electric coupling can be intrinsically in and also mediated via boundaries in heterostructures, utilizing, for example, magneto-strictive, piezoelectric, and ferroelectric/-magnetic materials. Nonetheless, an understanding of the fundamental processes is still not complete and research is devoted to uncovering the interplay of atomic order, orbital distribution, defects, and dopant states as well as interface properties with electric polarization and magnetic exchange processes. Extending the magneto-electric regime, readout or detection by means of light as a further step towards even more sophisticated device applications has recently gained research interest, as well.

This Special Issue aims at providing comprehensive insight into state-of-the-art as well as topical research within areas such as regarding the fabrication and experimental characterization of those systems, the theoretical understanding of the coupling mechanism at the atomic level, feasibility studies, and device demonstration. Additionally, aspects of the fundamental polarization and spin interaction processes in pure magnetic or ferroelectric materials when related to the coupling mechanism may be discussed. Topical reviews as well as original research is welcome.

Dr. Rüdiger Schmidt-Grund
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • multiferroic
  • magnetoelectric
  • ferroelectric
  • spin texture
  • correlation
  • disorder
  • multijunction terminal
  • heterostructure
  • interface
  • memory, sensor

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

11 pages, 4308 KiB  
Article
Correlation-Driven Topological Transition in Janus Two-Dimensional Vanadates
by Ghulam Hussain, Amar Fakhredine, Rajibul Islam, Raghottam M. Sattigeri, Carmine Autieri and Giuseppe Cuono
Materials 2023, 16(4), 1649; https://doi.org/10.3390/ma16041649 - 16 Feb 2023
Cited by 7 | Viewed by 1914
Abstract
The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the [...] Read more.
The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z = P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), and an in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials. Full article
Show Figures

Figure 1

Back to TopTop