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Advances in Structural, Electrical, and Optical Analysis of Diamond and...
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Advances in Structural, Electrical, and Optical Analysis of Diamond and Diamond-Like Carbon Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Carbon Materials".

Deadline for manuscript submissions: closed (20 January 2023) | Viewed by 4070

Special Issue Editor

Dr. David Hoxley

E-Mail Website
Guest Editor
Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Bundoora, VIC 3086, Australia
Interests: diamond; field emission; biosensing; scanning kelvin probe microscopy; secondary electron emission; wide band gap semiconductors; particle detectors

Special Issue Information

Dear Colleagues,

Diamond has a unique suite of properties that make it suitable for applications in a range of fields, including tribology, electronics, thermal management, optics, photonics, electrochemistry, and biomedicine. Most of these applications are now being realised thanks to the developments in synthetic diamond techniques such as chemical vapour deposition (CVD) that have occurred over the past few decades. In addition to natural diamonds, improved synthetic processes now routinely produce single-crystal, polycrystalline, nanocrystalline, and ultra-nanocrystalline diamonds as well as diamond-like carbon (DLC) films. 

Further development of synthetic diamond processes and applications relies on a continued understanding of the structure–property relationships of these materials through rigorous characterisation and analysis. In addition to enabling accurate knowledge of materials properties and understanding of how composition and structure influence the type of application and performance, thorough analysis and characterisation play a significant role in ensuring operational reliability as well as aiding the development of new materials and processes.

This Special Issue will focus on advances in structural, electrical, and optical analysis techniques of diamond and diamond-like carbon materials and welcomes both original research and review articles.

Dr. David Hoxley
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • single crystal diamond
  • diamond-like carbon
  • optical analysis
  • structural analysis
  • electrical analysis
  • chemical vapor deposition
  • synthetic diamond

Published Papers (2 papers)

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Research

10 pages, 1438 KiB  
Article
First-Principle Calculation on Inelastic Electron Scattering in Diamond and Graphite
by Run-Qi Yan, Meng Cao and Yong-Dong Li
Materials 2022, 15(9), 3315; https://doi.org/10.3390/ma15093315 - 5 May 2022
Cited by 2 | Viewed by 1663
Abstract
In this work, we consider the inelastic scattering of incident electrons as a key process for analyzing the significant differences in secondary electron (SE) emission between diamond and graphite. Dielectric functions and energy- and momentum-dependent energy loss functions were obtained by first-principle calculations. [...] Read more.
In this work, we consider the inelastic scattering of incident electrons as a key process for analyzing the significant differences in secondary electron (SE) emission between diamond and graphite. Dielectric functions and energy- and momentum-dependent energy loss functions were obtained by first-principle calculations. These were then used to calculate the inelastic mean free path (IMFP) and stopping power in different directions. The results show that the properties of diamond are very close in different directions, and its IMFP is lower than that of graphite when the electron energy is higher than 30 eV. In graphite, the incident electrons may exhibit directional preferences in their motion. These results indicate that, in graphite, SEs are excited in deeper positions than in diamond, and more SEs move in a horizontal direction than in a vertical direction, which leads to the difference in secondary electron yield (SEY). Full article
(This article belongs to the Special Issue Advances in Structural, Electrical, and Optical Analysis of Diamond and Diamond-Like Carbon Materials)
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12 pages, 6842 KiB  
Article
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
by Michał Sobaszek, Marcin Gnyba, Sławomir Kulesza, Mirosław Bramowicz, Tomasz Klimczuk and Robert Bogdanowicz
Materials 2021, 14(21), 6328; https://doi.org/10.3390/ma14216328 - 23 Oct 2021
Viewed by 1940
Abstract
We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To [...] Read more.
We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition. The diamond/GaN heterojunction was deposited in methane ratio, chamber pressure, temperature, and microwave power at 1%, 50 Torr, 500 °C, and 1100 W, respectively. Two samples with different doping were prepared 2000 ppm and 7000 [B/C] in the gas phase. SEM and AFM analyses revealed the presence of well-developed grains with an average size of 100 nm. The epitaxial GaN substrate-induced preferential formation of (111)-facetted diamond was revealed by AFM and XRD. After the deposition process, the signal of the GaN substrate is still visible in Raman spectroscopy (showing three main GaN bands located at 565, 640 and 735 cm−1) as well as in typical XRD patterns. Analysis of the current–voltage characteristics as a function of temperature yielded activation energy equal to 93.8 meV. Full article
(This article belongs to the Special Issue Advances in Structural, Electrical, and Optical Analysis of Diamond and Diamond-Like Carbon Materials)
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