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Advanced Electronic Packaging Technology: From Hard to Soft

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (20 May 2024) | Viewed by 18417

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Dr. Yue Gu

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Guest Editor

Department of Neurosurgery, Yale School of Medicine, New Haven, CT 06520, USA
Interests: soft electronic devices; electronic packaging; electrophysiology; flexible actuators and sensors; materials science
Special Issues, Collections and Topics in MDPI journals

Dr. Yongjun Huo

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Guest Editor

School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, China
Interests: electronic packaging; heterogeneous integration; opto-electronics and photonic devices; power electronics; thermal managment
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Special Issue Information

Dear Colleagues,

This Special Issue, “Advanced Electronic Packaging Technology: From Hard to Soft”, will address advances in Electronic Packaging Technology, including design, structure, material, processing, and testing of electronic and photonic devices. A particular perspective of this Special Issue focuses on the technologies associated with soft design and engineering of electronic packaging, potentially used in soft electronic devices. Electronic devices have been rapidly developing with the growing necessities of high-computing, low-power consumption, miniaturization, and multi-function in computers and consumer electronics products. Advanced electronic packaging technologies bridge the design and use of the powerful functions of electronic devices, so it plays a significant role in their development.

Smart electronics permeate into human’s daily life and become the extension of the human body. Soft electronic packaging represents one of the most promising approaches to form imperceptive and comfortable interfaces of human and electronic devices. In this regard, the demonstration of advanced soft materials, structures, and design in advanced electronic packaging is strongly demanded to comply with the requirements of the developments of soft electronic devices.

Original papers are solicited on all types of advanced electronic packaging technologies involving designs, structures, materials, processing, and testing. Of particular interest are recent developments in soft materials, structures, processes, and devices. Articles and reviews dealing with electronic packaging technologies in wearable electronics and photonic devices are very welcome.

Dr. Yue Gu
Dr. Yongjun Huo
Guest Editors

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Keywords

electronic packing technology
soft electronic and photonic devices
solder alloys
thermal management
intrinsically soft materials
flexible and stretchable structures

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Related Special Issue

Advanced Electronic Packaging Technology: From Hard to Soft (Second Edition) in Materials (1 article)

Published Papers (10 papers)

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Editorial

Jump to: Research, Review

5 pages, 203 KiB

Open AccessEditorial

Advanced Electronic Packaging Technology: From Hard to Soft

by Yue Gu and Yongjun Huo

Materials 2023, 16(6), 2346; https://doi.org/10.3390/ma16062346 - 15 Mar 2023

Cited by 6 | Viewed by 2940

Abstract

Packaging is a pivotal step in electronic device manufacturing, determining the translational performance of bare chips [...] Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

Research

Jump to: Editorial, Review

14 pages, 7278 KiB

Open AccessArticle

Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction

by Jinye Yao, Chenyu Li, Min Shang, Xiangxu Chen, Yunpeng Wang, Haoran Ma, Haitao Ma and Xiaoying Liu

Materials 2024, 17(15), 3682; https://doi.org/10.3390/ma17153682 - 25 Jul 2024

Viewed by 722

Abstract

As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the grain size of intermetallic compounds (IMCs) has been observed during the reflow process. This phenomenon results in an increased thickness of the IMC layer, accompanied by a proportional increase in the volume of the IMC layer within the joint. The brittle nature of IMC renders it susceptible to excessive growth in small-sized joints, which has the potential to negatively impact the reliability of the welded joint. It is therefore of the utmost importance to regulate the formation and growth of IMCs. The following paper presents the electrodeposition of a Ni-W layer on a Cu substrate, forming a barrier layer. Subsequently, the barrier properties between the Sn/Cu reactive couples were subjected to a comprehensive and systematic investigation. The study indicates that the Ni-W layer has the capacity to impede the diffusion of Sn atoms into Cu. Furthermore, the Ni-W layer is a viable diffusion barrier at the Sn/Cu interface. The “bright layer” Ni₂WSn₄ can be observed in all Ni-W coatings during the soldering reflow process, and its growth was almost linear. The structure of the Ni-W layer is such that it reduces the barrier properties that would otherwise be inherent to it. This is due to the “bright layer” Ni₂WSn₄ that covers the original Ni-W barrier layer. At a temperature of 300 °C for a duration of 600 s, the Ni-W barrier layer loses its blocking function. Once the “bright layer” Ni₂WSn₄ has completely covered the original Ni-W barrier layer, the diffusion activation energy for Sn diffusion into the Cu substrate side will be significantly reduced, particularly in areas where the distortion energy is concentrated due to electroplating tension. Both the “bright layer” Ni₂WSn₄ and Sn will grow rapidly, with the formation of Cu-Sn intermetallic compounds (IMCs). At temperatures of 250 °C, the growth of Ni₃Sn₄-based IMCs is controlled by grain boundaries. Conversely, the growth of the Ni₂WSn₄ layer (consumption of Ni-W layer) is influenced by a combination of grain boundary diffusion and bulk diffusion. At temperatures of 275 °C and 300 °C, the growth of Ni₃Sn₄-based IMCs and the Ni₂WSn₄ layer (consumption of Ni-W layer) are both controlled by grain boundaries. The findings of this study can inform the theoretical design of solder joints with barrier layers as well as the selection of Ni-W diffusion barrier layers for use in different soldering processes. This can, in turn, enhance the reliability of microelectronic devices, offering significant theoretical and practical value. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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11 pages, 4403 KiB

Open AccessArticle

Vertical Interconnection Technology for RF MicroSystem Packaging

by Yongfang Hu, Wei Sun, Yipeng Sun and Qingan Huang

Materials 2024, 17(14), 3425; https://doi.org/10.3390/ma17143425 - 11 Jul 2024

Viewed by 600

Abstract

In this work, 1.5-level interconnections of RF microsystems with good RF performance, integration process compatibility, and high reliability are developed to meet the future demand for wireless communication microsystems in the millimeter wave band. Numerical models of 1.5-level interconnections based on solder balls with different diameters are established and analyzed using HFSS. The optimized structure parameters of 0.2 mm diameter Sn96.5Ag3Cu0.5 (SAC305) solder balls and 0.3 mm diameter Sn63Pb37 solder balls are selected for the interconnection between glass micro substrates and silicon micro substrates and between silicon micro substrates and HTCC substrates, respectively. Integration process parameters of the vertical interconnection are optimized. The micro substrate interconnection samples manufactured based on optimized integration methods and parameters show high reliability. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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14 pages, 4892 KiB

Open AccessArticle

Taguchi Optimization of Wetting, Thermal and Mechanical Properties of Sn-1.0wt.%Ag-0.5wt.%Cu Alloys Modified with Bi and Sb

by Sung-joon Hong, Ashutosh Sharma and Jae Pil Jung

Materials 2024, 17(11), 2661; https://doi.org/10.3390/ma17112661 - 1 Jun 2024

Viewed by 771

Abstract

This study was conducted on SAC105 (Sn-1wt.%Ag-0.5wt.%Cu) lead-free solder modified with Bi and Sb. The wetting, melting point, and mechanical properties were analysed with the addition of 1~5 wt.%Bi and 1~5 wt.%Sb for SAC105 base alloy. The wetting characteristics were assessed by wetting time (zero cross time, ZCT) obtained from wetting balance tests. The mechanical properties were analysed by tensile tests. Considering two factors (Bi, Sb), a three-level (0, 1, 2 wt.%) design of experiment (DOE) method array was applied for Taguchi optimization. The results indicated that the solder wetting increased as Bi content increased, while it decreased with Sb. The ZCT decreased with increasing Bi content up to 4 wt.%, while it increased proportionally to Sb content. The melting point, measured using a differential scanning calorimeter (DSC), showed that the melting point tended to decrease according to Bi increase, while it increases depending on the Sb content. Increase in Bi and Sb levels resulted in enhanced tensile strength in the mechanical properties tests, with Bi having a more noticeable impact. The Taguchi optimized conditions for the Bi and Sb studies were found to be 2 wt.%Bi and 2 wt.%Sb. This led to an optimal set of 0.9 s of wetting time, a 222.55 °C melting point, a 55 MPa tensile strength, and a 50% elongation. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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17 pages, 6821 KiB

Open AccessArticle

Size Effects of Au/Ni-Coated Polymer Particles on the Electrical Performance of Anisotropic Conductive Adhesive Films under Flexible Mechanical Conditions

by Yexing Fang, Taiyu Wang, Yue Gu, Mingkun Yang, Hong Li, Sujun Shi, Xiuchen Zhao and Yongjun Huo

Materials 2024, 17(7), 1658; https://doi.org/10.3390/ma17071658 - 4 Apr 2024

Viewed by 1230

Abstract

In soft electronics, anisotropic conductive adhesive films (ACFs) are the trending interconnecting approach due to their substantial softness and superior bondability to flexible substrates. However, low bonding pressure (≤1 MPa) and fine-pitch interconnections of ACFs become challenging while being extended in advanced device developments such as wafer-level packaging and three-dimensional multi-layer integrated circuit board assembly. To overcome these difficulties, we studied two types of ACFs with distinct conductive filler sizes (ACF-1: ~20 μm and ACF-2: ~5 μm). We demonstrated a low-pressure thermo-compression bonding technique and investigated the size effect of conductive particles on ACF’s mechanical properties in a customized testing device, which consists of flexible printing circuits and Flex on Flex assemblies. A consistency of low interconnection resistance (<1 Ω) after mechanical stress (cycling bending test up to 600 cycles) verifies the assembly’s outstanding electrical reliability and mechanical stability and thus validates the great effectiveness of the ACF bonding technique. Additionally, in numerical studies using the finite element method, we developed a generic model to disclose the size effect of Au/Ni-coated polymer fillers in ACF on device reliability under mechanical stress. For the first time, we confirmed that ACFs with smaller filler particles are more prone to coating fracture, leading to deteriorated electrical interconnections, and are more likely to peel off from substrate electrode pads resulting in electrical faults. This study provides guides for ACF design and manufacturing and would facilitate the advancement of soft wearable electronic devices. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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15 pages, 5277 KiB

Open AccessEditor’s ChoiceArticle

Improvement of PbSn Solder Reliability with Ge Microalloying-Induced Optimization of Intermetallic Compounds Growth

by Zhibo Qu, Yilong Hao, Changhao Chen, Yong Wang, Shimeng Xu, Shuyuan Shi, Pengrong Lin and Xiaochen Xie

Materials 2024, 17(3), 724; https://doi.org/10.3390/ma17030724 - 2 Feb 2024

Viewed by 1099

Abstract

PbSn solders are used in semiconductor devices for aerospace or military purposes with high levels of reliability requirements. Microalloying has been widely adopted to improve the reliability for Pb-free solders, but its application in PbSn solders is scarce. In this article, the optimization of PbSn solder reliability with Ge microalloying was investigated using both experimental and calculation methods. Intermetallic compounds (IMC) growth and morphologies evolution during reliability tests were considered to be the main factors of device failure. Through first-principle calculation, the growth mechanism of interfacial Ni₃Sn₄ was discussed, including the formation of vacancies, the Ni-vacancies exchange diffusion and the dominant Ni diffusion along the [1 0 0] direction. The doping of Ge in the cell increased the exchange energy barrier and thus inhibited the IMC development and coarsening trend. In three reliability tests, only 0.013 wt% Ge microalloying in Pb60Sn40 was able to reduce IMC thickness by an increment of 22.6~38.7%. The proposed Ge microalloying method in traditional PbSn solder could yield a prospective candidate for highly reliable applications. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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13 pages, 4053 KiB

Open AccessArticle

Synthesis of Cobalt Particles and Investigation of Their Electromagnetic Wave Absorption Characteristics

by Hong Li, Hongyang Li, Bo Sheng, Bing Zheng, Sujun Shi, Qing Cai, Wenqi Xu, Xiuchen Zhao and Ying Liu

Materials 2024, 17(1), 200; https://doi.org/10.3390/ma17010200 - 29 Dec 2023

Viewed by 957

Abstract

As the integration technology for integrated circuit (IC) packaging continues to advance, the issue of electromagnetic interference in IC packaging becomes increasingly prominent. Magnetic materials, acknowledged for their superior electromagnetic absorption capabilities, play a pivotal role in mitigating electromagnetic interference problems. In this study, we employed a liquid-phase reduction method. We prepared three types of cobalt (Co) particles with distinct morphologies. Through variations in the synthesis process conditions, we were able to control the aspect ratio of protrusions on the surface of the Co particles. It was found that the sword-like Co particles exhibit superior electromagnetic wave absorption capabilities, showing a reflection loss value of up to −50.96 dB. Notably, when the coating thickness is only 1.6 mm, the effective absorption bandwidth is extended up to 7.6 GHz. The spatially expansive sword-like Co particles, with their unique structure featuring dipole polarization and interfacial polarization, demonstrated enhanced dielectric and magnetic loss capabilities, concurrently showcasing superior impedance-matching performance. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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15 pages, 9714 KiB

Open AccessArticle

A Design Method for Rectangular Waveguide-Typed Microwave Devices Based on a Novel Origami Process

by Yipeng Sun, Chuyuan Gao, Lijun Chen and Lei Han

Materials 2023, 16(24), 7625; https://doi.org/10.3390/ma16247625 - 13 Dec 2023

Cited by 1 | Viewed by 1207

Abstract

A novel design method based on a novel origami process that can create a solid structure swiftly and at a low cost is presented for rectangular waveguide-type microwave devices in this paper. A planar structure was fabricated by the lamination and laser cutting of polystyrene membranes and aluminum foils and was converted into a solid structure via origami in accordance with the selective absorption of infrared light. A rectangular waveguide, a rectangular waveguide-type coupler, and a power divider based on an origami structure with a multi-layer structure and a single-layer structure were fabricated and tested, demonstrating easy assembly and good microwave performance. The measured results of the rectangular waveguide indicated that the insertion loss was superior to −0.9 dB. Meanwhile, the results of the coupler showed that the coupling degree increased from −12.8 dB to −8.9 dB in the range of 11.0 GHz to 12.0 GHz. Correspondingly, the prepared power divider demonstrated that the return loss dwindled from −8.9 dB to −11.3 dB and that the insertion loss of one output port was approximate to that of the remaining one, varying between −3.5 dB and −5.2 dB in the range of 10.5 GHz to 11.5 GHz—verifying the effectiveness of the origami-based design method. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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15 pages, 5700 KiB

Open AccessArticle

Research on Processability and Transmission Performance of Low Temperature Co-Fired Ceramic Ball Grid Array Packaging Based on Electroless Plating Surface Modification for Microwave Transceiver Circuits

by Song Wang, Tianyu Hou, Rui Huo, Zhengtian Chen, Qinghua Zeng, Ying He, Yan Zhao and Xiao Liu

Materials 2023, 16(20), 6720; https://doi.org/10.3390/ma16206720 - 17 Oct 2023

Viewed by 1103

Abstract

A microwave transmitter/receiver using the low-temperature co-fired ceramic substrate and ball grid array packaging demonstrates superior properties, including high integration, miniaturization, and high electromagnetic shielding. However, it holds limitations of inadequate hermeticity (that is, gas or moist impermeability), high cost, and low reproducibility. In this work, we aim to overcome these difficulties by introducing a new packing technique. The packaging utilizes an electroless plated Ni/Pd/Au surface, resulting in a significant enhancement of the packaging hermeticity by orders of magnitude, approaching the level of <5 × 10⁻⁹ Pa·m³/s. Both Sn63Pb37 and Au80Sn20 solder alloys demonstrate exceptional solderability, attributed to Pd atoms diffusing to the Au layer during soldering at 310 °C. A reliability test of the packaging shows that the shear strength of the solder balls drops after thermal shocks but negligibly affects the hermeticity of the packaging. Furthermore, a meticulously designed internal vertical interconnect structure and I/O interconnections were engineered in the ball grid array packaging, showcasing excellent transmission characteristics within the 10–40 GHz frequency range while ensuring effective isolation between ports. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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Review

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40 pages, 5035 KiB

Open AccessReview

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

by Ye Jin Jang, Ashutosh Sharma and Jae Pil Jung

Materials 2023, 16(24), 7652; https://doi.org/10.3390/ma16247652 - 14 Dec 2023

Cited by 3 | Viewed by 5667

Abstract

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency. Full article

(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)

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