Synthesis and Characterization of the Growth of Epitaxial Films
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".
Deadline for manuscript submissions: closed (20 November 2022) | Viewed by 5043
Special Issue Editor
Special Issue Information
The “Synthesis and Characterization of the Growth of Epitaxial Films” is a hot topic covering a wide range of scientific and engineering fields in an equally wide range of industrial sectors such as microelectronics, optics, defense, spatial, jewelry and so on. Epitaxial growth is a bridge between crystal growth and device manufacturing, bringing a very high added value to the final products. Thus, it is an ecosystem covering both experimental and theoretical scientific research as well as engineering and technical developments.
The intended physical, chemical, thermal, mechanical, etc., properties of the synthesized objects come from the control of growth processes. Novel synthesis techniques have been developed, such as 3D printing epitaxy, and have evolved alongside well-established ones, for which developments are also taking place, such as MBE and its atomic sublimation or valved sources, CVD and its variants, PLD, sol-gel, etc. The characterization of the properties is carried out by volume (bulk) or surface analytical techniques, which have also benefited from significant advances: auger microprobes, spin detectors, nanoindentation, Raman spectroscopy, etc.
This Special Issue will address advances in the synthesis and characterization of epitaxial films growth with focuses on:
- the interplay between the growth of the films and their properties;
- novel film growth and characterization techniques;
- new materials epitaxially grown as thin films.
Keywords
- thin films
- homoepitaxy
- heteroepitaxy
- growth methods and techniques
- characterization methods and techniques
- properties of thin films
- surface and interface engineering
