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Laser Processing of Advanced Materials
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Laser Processing of Advanced Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Manufacturing Processes and Systems".

Deadline for manuscript submissions: closed (20 April 2023) | Viewed by 4894

Special Issue Editor

Prof. Dr. Joonghan Shin

E-Mail Website
Guest Editor
Division of Mechanical and Automotive Engineering, Department of Future Convergence Engineering, Kongju National University, 1223-24 Cheonandaero, Seobuk-gu, Cheonan 31080, Korea
Interests: laser welding; laser annealing; numerical simulation of laser material processing; monitoring of laser process

Special Issue Information

Dear Colleagues,

Laser material processing uses intensified radiation energy as a heat source to modify the shape or properties of a material. This type of material processing can provide many advantages, such as the ability to process difficult-to-machine materials, produce small heat-affected zones and deformations and improve the properties of materials in various aspects.

For several decades, laser material processing has been widely used in various manufacturing areas. It can be used to remove and join materials at macro and micro scale, modify surface properties and create thin films and alloys. Additive manufacturing is also considered as one of the major applications of laser-based processes.

Owing to the new development of advanced materials, the potential application of laser processes is now seeing continuous growth. Accordingly, extensive research for the laser processing of advanced materials is highly recommended for the relevant application of advanced materials.

This Special Issue focuses on the laser processing of advanced materials, the characterization of their properties, and the finding of underlying physics related to the process.

The topics of interest include but are not limited to:

  • Laser processing of advanced materials (i.e., composites, multifunctional materials, and various metal, polymer, ceramic, electrical, energy, and biological materials which have applications in high-tech industries such as aerospace, automobile, semiconductor/display or biomedical industries);
  • Characterization of laser-processed materials (mechanical, thermophysical, chemical, electrical or optical properties, etc.);
  • New material processing technology based on laser;
  • Interaction mechanism between laser and advanced materials;
  • Threshold power or energy density for material modification;
  • Numerical simulation of laser processes.

Prof. Dr. Joonghan Shin
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • laser processing
  • advanced material
  • material modification
  • characterization
  • material property
  • interaction mechanism
  • simulation of laser process

Published Papers (3 papers)

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Research

10 pages, 6138 KiB  
Article
Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed
by Rasheed Ayinde Taiwo, Joong-Han Shin and Yeong-Il Son
Materials 2022, 15(22), 7886; https://doi.org/10.3390/ma15227886 - 8 Nov 2022
Cited by 2 | Viewed by 1562
Abstract
We report an in-depth analysis of phosphorus (P)-doped silicon (Si) with a continuous-wave laser source using a high scan speed to increase the performance of semiconductor devices. We systematically characterized the P-doped Si annealed at different laser powers using four-point probe resistance measurement, [...] Read more.
We report an in-depth analysis of phosphorus (P)-doped silicon (Si) with a continuous-wave laser source using a high scan speed to increase the performance of semiconductor devices. We systematically characterized the P-doped Si annealed at different laser powers using four-point probe resistance measurement, transmission electron microscopy (TEM), secondary-ion mass spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). Notably, a significant reduction in sheet resistance was observed after laser annealing, which indicated the improved electrical properties of Si. TEM images confirmed the epitaxial growth of Si in an upward direction without a polycrystalline structure. Furthermore, we observed the activation of P without diffusion, irrespective of the laser power in the secondary-ion mass-spectrometry characterization. We detected negligible changes in lattice spacing for the main (400) XRD peak, showing an insignificant effect of the laser annealing on the strain. AFM images of the annealed samples in comparison with those of the as-implanted sample showed that the laser annealing did not significantly change the surface roughness. This study provides an excellent heating method with high potential to achieve an extremely low sheet resistance without diffusion of the dopant under a very high scan speed for industrial applications. Full article
(This article belongs to the Special Issue Laser Processing of Advanced Materials)
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18 pages, 10318 KiB  
Article
In-Depth Characterization of Laser-Welded Aluminum-and-Copper Dissimilar Joint for Electric Vehicle Battery Connections
by Sajid Ali and Joonghan Shin
Materials 2022, 15(21), 7463; https://doi.org/10.3390/ma15217463 - 25 Oct 2022
Cited by 6 | Viewed by 3128
Abstract
With advancements in the automotive industry, the demand for electric vehicles (EVs) has remarkably increased in recent years. However, the EV battery, which is a vital part of the EV, poses certain challenges that limit the performance of the EVs. The joining of [...] Read more.
With advancements in the automotive industry, the demand for electric vehicles (EVs) has remarkably increased in recent years. However, the EV battery, which is a vital part of the EV, poses certain challenges that limit the performance of the EVs. The joining of dissimilar materials for different components affects the electrical and mechanical performances of EV batteries. Laser beam welding is a promising technique for joining Al and Cu for application in secondary battery fabrication because of the precise control over heat input and high process speed. However, the production of Al–Cu joints remains challenging because of the differences between their thermal and metallurgical properties and the resulting formation of brittle and hard intermetallic compounds, which reduce mechanical and electric properties. Thus, it is vital to characterize the weld to improve joint performance and enhance the laser welding process. This study investigates the joining of an Al alloy (AA1050) with Ni-coated Cu using a continuous-wave Yb fiber laser. The evaluation of the weld morphology showed a correlation between the weld characteristics and process parameters (laser power and welding speed). The weld interface width and penetration depth into the lower sheet (Cu) both increased with increasing heat input. Optical microscopy of the weld cross-section revealed many defects, such as voids and cracks. Scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) was employed to examine the weld microstructure. The composition analysis revealed the presence of mixed morphology of Al–Cu eutectic alloy (α-Al+Θ-Al2Cu) phase in the form of dendrites in the weld fusion zone with traces of the highly brittle Al4Cu9 phase at a high heat input condition. Furthermore, the electrical contact resistance of the weld seam was measured to determine the correlation between heat input and resistance. In addition, Vickers microhardness measurements were performed on the weld cross-section to validate the SEM/EDS results. Full article
(This article belongs to the Special Issue Laser Processing of Advanced Materials)
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13 pages, 4282 KiB  
Article
Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device
by Yeong-Il Son and Joonghan Shin
Materials 2022, 15(12), 4201; https://doi.org/10.3390/ma15124201 - 13 Jun 2022
Cited by 4 | Viewed by 2289
Abstract
Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for [...] Read more.
Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this study was to develop the numerical model for the laser melting process of a-Si used in V-NAND COP structure. In this study, the numerical simulation predicting the temperature distribution induced by multipath laser scanning and beam overlapping was conducted. In particular, the temperature uniformity and melt duration issues, which are critical in practical laser melt annealing applications in semiconductor fabrication, were discussed based on the simulated temperature distribution results. According to the simulation results, it was found that the annealed surface was subjected to rapid heating and cooling. The heating and cooling rates after temperature stabilization were 4.7 × 107 K/s and 2.04 × 107 K/s, respectively. The surface temperature increased with time and beam overlap ratio owing to the preheating effect and increasing heat accumulation per unit area. Under the process conditions used in the simulation, the temperature in a-Si was far above its melting point (1440 K), which numerically indicated full melting of the a-Si layer. Temperature uniformity within the annealed area was significantly improved when an overlap ratio of 50% was used. It was also found that using an overlap ratio of 50% increased the melt duration by 29.8% compared with an overlap ratio of 25%. Full article
(This article belongs to the Special Issue Laser Processing of Advanced Materials)
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