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Micro/Nanomechanics: From Theory to Application
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Micro/Nanomechanics: From Theory to Application

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 13672

Special Issue Editors

Prof. Dr. Takahiro Namazu

E-Mail Website
Guest Editor
Faculty of Engineering, Kyoto University of Advanced Science (KUAS), Kyoto 615-8577, Japan
Interests: nanomechanics; nanotechnology; nanofabrication; functional materials; thin film
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Shugo Miyake

E-Mail Website
Guest Editor
Kobe City College of Technology, Kobe, Japan
Interests: thermophysics; experimental mechanics; material characterization; thermoreflectance method; exothermic reaction

Special Issue Information

Dear Colleagues,

The Special Issue, "Micro-/Nano-Mechanics: From Theory to Application", focuses on the newest technologies in micro-/nano-mechanics for the experimental measurement and theoretical calculation of, not only mechanical properties, but also electrical and thermal properties. In addition, applications focused on the following topics will be considered for inclusion: micro-electromechanical systems (MEMS), nano-electromechanical systems (NEMS), microsensors, smart devices, and electronic devices. The continued growth and challenge of science technologies in all industrial fields fundamentally support life through energy saving, the improvement of global environments, and securing safety. Particularly, the dominating general properties of any devices and materials, micro-/nano-mechanics, and material characteristics fascinate us. Original papers are solicited in order to aid and promote our understanding of these subjects. We are especially interested in, but are not limited to, the following topics: mechanical properties, thermal properties, electric properties, experimental method, testing, MEMS/NEMS devices, and related functional materials. Articles and reviews dealing with the above keywords are very welcome.

Prof. Dr. Takahiro Namazu
Prof. Dr. Shugo Miyake
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Mechanical reliability
  • Experimental mechanics
  • Testing and measurement
  • Mechanical properties
  • Thermal properties
  • Electric properties
  • MEMS/NEMS devices
  • Related functional materials

Published Papers (5 papers)

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Research

10 pages, 2149 KiB  
Article
Development of Novel Thermal Diffusivity Analysis by Spot Periodic Heating and Infrared Radiation Thermometer Method
by Sho Nagata, Tsuyoshi Nishi, Shugo Miyake, Naoyoshi Azuma, Kimihito Hatori, Takaaki Awano and Hiromichi Ohta
Materials 2020, 13(21), 4848; https://doi.org/10.3390/ma13214848 - 29 Oct 2020
Cited by 11 | Viewed by 1945
Abstract
A spot periodic heating method is a highly accurate, non-contact method for the evaluation of anisotropy and relative thermophysical property distribution. However, accurately evaluating thermal diffusivity is difficult due to the influence of temperature wave reflection from the whole surface of the sample. [...] Read more.
A spot periodic heating method is a highly accurate, non-contact method for the evaluation of anisotropy and relative thermophysical property distribution. However, accurately evaluating thermal diffusivity is difficult due to the influence of temperature wave reflection from the whole surface of the sample. This study proposes a method to derive thermal diffusivity using a parameter table based on heat transfer equations using the concept of optimum distance between heating-point and measurement point. This method considers finite sample size, sensitivity distribution of infrared ray detector, intensity distribution of heating laser and sample thickness. In these results, the obtained thermal diffusivity of pure copper corresponded well with previous literature values. In conclusion, this method is considered highly effective in evaluating the thermal diffusivity in the horizontal direction. Full article
(This article belongs to the Special Issue Micro/Nanomechanics: From Theory to Application)
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8 pages, 3465 KiB  
Article
Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation
by Shingo Kammachi, Yoshiharu Goshima, Nobutaka Goami, Naoaki Yamashita, Shigeru Kakinuma, Kentaro Nishikata, Nobuyuki Naka, Shozo Inoue and Takahiro Namazu
Materials 2020, 13(20), 4490; https://doi.org/10.3390/ma13204490 - 10 Oct 2020
Cited by 4 | Viewed by 1628
Abstract
We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment [...] Read more.
We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO2 film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO2 film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection. Full article
(This article belongs to the Special Issue Micro/Nanomechanics: From Theory to Application)
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12 pages, 9757 KiB  
Article
Effect of the Particle Size of Al/Ni Multilayer Powder on the Exothermic Characterization
by Shugo Miyake, Taisei Izumi and Rino Yamamoto
Materials 2020, 13(19), 4394; https://doi.org/10.3390/ma13194394 - 1 Oct 2020
Cited by 4 | Viewed by 2026
Abstract
In this study, the exothermic temperature performance of various Al/Ni multilayer powders with particle sizes ranging from under 75 to over 850 µm, which generate enormous heat during self-propagating exothermic reactions, was determined using a high-speed sampling pyrometer. The Al/Ni multilayer powders were [...] Read more.
In this study, the exothermic temperature performance of various Al/Ni multilayer powders with particle sizes ranging from under 75 to over 850 µm, which generate enormous heat during self-propagating exothermic reactions, was determined using a high-speed sampling pyrometer. The Al/Ni multilayer powders were prepared by a cold-rolling and pulverizing method. The multilayer constitution of the Al/Ni multilayer powders was examined by observing the cross-section of the powders using scanning electron microscopy; the results indicate that the powders had similar lamellar structures regardless of the particle size. Exothermic reactions were carried out to measure the temperature changes during the experiment using a pyrometer. We found that the maximum temperature and the duration of the exothermic reaction increased with an increase in the particle size caused by the heat dissipation of the surface area of the Al/Ni multilayer powder. This indicates that the thermal characteristics of the exothermic reaction of the Al/Ni multilayer powder can be controlled by adjusting the particle size of the Al/Ni multilayer powder. Finally, we concluded that this controllability of the exothermic phenomenon can be applied as a local heating source in a wide range of fields. Full article
(This article belongs to the Special Issue Micro/Nanomechanics: From Theory to Application)
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10 pages, 4893 KiB  
Article
Temperature Dependence on Tensile Mechanical Properties of Sintered Silver Film
by Keisuke Wakamoto, Yo Mochizuki, Takukazu Otsuka, Ken Nakahara and Takahiro Namazu
Materials 2020, 13(18), 4061; https://doi.org/10.3390/ma13184061 - 13 Sep 2020
Cited by 18 | Viewed by 4745
Abstract
This paper investigates the influence of temperature on tensile mechanical properties of sintered silver (s-Ag) films with 8–10 μm in thickness for fundamental reliability design of semiconductor systems. The s-Ag film sintered under a pressure of 60 MPa possesses the porosity (p [...] Read more.
This paper investigates the influence of temperature on tensile mechanical properties of sintered silver (s-Ag) films with 8–10 μm in thickness for fundamental reliability design of semiconductor systems. The s-Ag film sintered under a pressure of 60 MPa possesses the porosity (p) around 5% determined from cross-sectional scanning electron microscope (SEM) images. The stress–strain (S-S) curves of s-Ag and pure silver (p-Ag) films are obtained using originally designed uniaxial tensile tester at temperatures from 25 °C to 150 °C. The S-S curves of p-Ag indicate ductile behavior irrespective of temperature, whereas those of s-Ag indicate brittle-ductile transition at 120 °C. Compared with p-Ag, s-Ag possesses low Young’s modulus (E) and high ultimate tensile strength (UTS) below 80 °C. The mechanism of brittle-ductile transition is discussed based on fracture surface observation results. Full article
(This article belongs to the Special Issue Micro/Nanomechanics: From Theory to Application)
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13 pages, 5584 KiB  
Article
Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor
by Jian Chen, Zhi-Ji Wang, Bao-Hua Zhu, Eun-Seong Kim and Nam-Young Kim
Materials 2020, 13(8), 1932; https://doi.org/10.3390/ma13081932 - 20 Apr 2020
Cited by 4 | Viewed by 2910
Abstract
This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into [...] Read more.
This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance. Full article
(This article belongs to the Special Issue Micro/Nanomechanics: From Theory to Application)
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