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Semiconductor Materials: Physical Properties, Modeling and Simulation
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Semiconductor Materials: Physical Properties, Modeling and Simulation

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 November 2022) | Viewed by 5179

Special Issue Editor

Dr. Fong Kwong Yam

E-Mail Website
Guest Editor
School of Physics, University Sains Malaysia, 11800 Penang, Malaysia
Interests: III-nitrides; metal oxide materials; ultra-wide bandgap semiconductors; nano-scaled semiconductors; photocatalytic pollutant degradation; chemical sensors; dye-sensitized solar cell

Special Issue Information

Presently, we are living in the digital era, which is based on semiconductor technology. The unique properties of semiconductor materials had led to many breakthroughs in technological applications. Semiconductor-made devices are indispensable products in our daily lives which we heavily rely upon, such as digital consumer products, and for transportation, internet, communications and other parts of the social infrastructure.

With the advancement of growth techniques, many new compound semiconductor materials could be synthesized and developed for various novel device applications. Therefore, research on semiconductor materials is crucial for making a breakthrough to realize next-generation semiconductor devices and cutting-edge technologies.

Apart from this, the innovation and development of high-performance semiconductor devices are strongly driven and motivated by the advances in semiconductor technology. Hence, in order to overcome the drawbacks and limitations of conventional silicon semiconductor technology, research on other emerging semiconductor materials, such as organic semiconductors, carbon-based materials and oxide semiconductors, and ultra-wide bandgap semiconductor materials are highly sought after due to their potential application in various areas. Specifically, the study of the physical properties of these semiconductor materials can outline both semiconductor devices and application technologies that are widely employed presently, and also fuels and inspires the advancement of various aspects such as crystal growth techniques, new semiconductor compound development, process technologies, doping technologies, and material composition technologies. These efforts for semiconductor technology enhancement and innovation will lead to a new horizon for the next-generation semiconductor industry.

It is my pleasure to invite you to submit a manuscript to this Special Issue which will present a new paradigm for the semiconductor industry. Full papers, communications, and reviews are all welcome. We expect submissions covering the following topics:

  • Crystal growth and characterization.
  • Organic semiconductor materials.
  • Oxide semiconductor materials.
  • Carbon-based semiconductor materials.
  • Two-dimensional semiconductor materials.
  • Low bandgap to ultra-wide bandgap semiconductors.
  • Modeling and simulation of semiconductor materials.
  • Semiconductor devices.
  • Application of semiconductor materials.
  • Processing technology of semiconductor devices.
  • Other semiconductor related topics which are not listed above.

Dr. Fong Kwong Yam
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Crystal growth and characterization
  • Bulk and nano-scaled semiconductors
  • Binary, ternary and quaternary compound semiconductors
  • Emerging semiconductor materials
  • Physical properties
  • Modeling and simulation
  • Device application
  • Processing technology

Published Papers (3 papers)

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Research

13 pages, 3011 KiB  
Article
OLED Structure Optimization for Pure and Efficient NIR Electroluminescence of Nd3+ Complexes Bearing Fluorinated 1,3-Diketones
by Daria A. Metlina, Dmitry O. Goryachii, Mikhail T. Metlin, Lyudmila V. Mikhalchenko, Vladislav M. Korshunov and Ilya V. Taydakov
Materials 2023, 16(3), 1243; https://doi.org/10.3390/ma16031243 - 1 Feb 2023
Cited by 3 | Viewed by 1737
Abstract
NIR emitting OLEDs (organic light-emitting diodes) with high photoluminescence quantum yields were developed on the basis of fluorinated 1,3-diketonate coordination compounds of the Nd3+ ion. Both thermal evaporation and spin-coating techniques were successfully employed for active layer deposition resulting in electroluminescence quantum [...] Read more.
NIR emitting OLEDs (organic light-emitting diodes) with high photoluminescence quantum yields were developed on the basis of fluorinated 1,3-diketonate coordination compounds of the Nd3+ ion. Both thermal evaporation and spin-coating techniques were successfully employed for active layer deposition resulting in electroluminescence quantum yields up to 1.38·10−2%. Blueish-green emission from exciplex and electroplax formations was almost suppressed with the topology optimization of the cell. Full article
(This article belongs to the Special Issue Semiconductor Materials: Physical Properties, Modeling and Simulation)
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16 pages, 3228 KiB  
Article
Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial
by Nikolay Bert, Vitaliy Ushanov, Leonid Snigirev, Demid Kirilenko, Vladimir Ulin, Maria Yagovkina, Valeriy Preobrazhenskii, Mikhail Putyato, Boris Semyagin, Igor Kasatkin and Vladimir Chaldyshev
Materials 2022, 15(21), 7597; https://doi.org/10.3390/ma15217597 - 28 Oct 2022
Cited by 4 | Viewed by 1567
Abstract
AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, [...] Read more.
AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fröhlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fröhlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors. Full article
(This article belongs to the Special Issue Semiconductor Materials: Physical Properties, Modeling and Simulation)
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18 pages, 4896 KiB  
Article
Some Distinct Attributes of ZnO Nanorods Arrays: Effects of Varying Hydrothermal Growth Time
by Mohammed Rashid Almamari, Naser M. Ahmed, Araa Mebdir Holi, F. K. Yam, Htet Htet Kyaw, M. A. Almessiere and Mohammed Z. Al-Abri
Materials 2022, 15(17), 5827; https://doi.org/10.3390/ma15175827 - 24 Aug 2022
Cited by 4 | Viewed by 1284
Abstract
This study investigates the growth time effect on the structural, morphological, optical, and photoelectrochemical characteristics of highly oriented ZnO nanorod arrays (ZNRAs). The nanorod arrays were grown on ITO substrates using the unified sol-gel spin coating and hydrothermal techniques. ZnO nanoparticles (ZNPs) were [...] Read more.
This study investigates the growth time effect on the structural, morphological, optical, and photoelectrochemical characteristics of highly oriented ZnO nanorod arrays (ZNRAs). The nanorod arrays were grown on ITO substrates using the unified sol-gel spin coating and hydrothermal techniques. ZnO nanoparticles (ZNPs) were synthesized using the sol-gel spin coating method. In contrast, the hydrothermal method was used to grow the ZnO nanorods. The hydrothermal growth time investigated was between 4 and 12 h. The synthesized ZNRAs were used as the photoanode electrodes to investigate their photoelectrochemical (PEC) electrode potency. The as-prepared ZNRAs were characterized using various analytical tools to determine their structures, morphologies, optical, and photoelectrochemical traits. EDX spectra showed the presence of uncontaminated ZnO chemical composition, and FTIR spectra displayed the various functional groups in the samples. A rod-shaped ZnO nanocrystallite with mean lengths and diameters of 300–500 nm and 40–90 nm, respectively, is depicted. HRTEM images indicated the nucleation and growth of ZNRAs with a lattice fringe spacing of 0.26 nm and a growth lattice planer orientation of [002]. The optimum ZNRAs (grown at 8 h) as photoelectrode achieved a photoconversion efficiency of 0.46% and photocurrent density of 0.63 mA/cm2, that was 17 times higher than the one shown by ZNPs with Ag/AgCl as the reference electrode. Both values were higher than those reported in the literature, indicating the prospect of these ZNRAs for photoelectrode applications. Full article
(This article belongs to the Special Issue Semiconductor Materials: Physical Properties, Modeling and Simulation)
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