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Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications...
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Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (15 February 2020) | Viewed by 22918

Special Issue Editor

Prof. Dr. Sang-Mo Koo

E-Mail Website
Guest Editor
School of Electronics and Information Technology, Kwangwoon University, Seoul, Korea
Interests: SiC devices; wide bandgap materials; SiC; power transistors; semiconductor devices

Special Issue Information

Dear Colleagues,

As a promising wide bandgap semiconductor, Silicon Carbide (SiC) has attracted increasing attention due to the recent achievements in wafer growth technology and its outstanding materials properties such as higher values for breakdown electric field, saturation velocity and superior thermal conductivity.

SiC, being one of the most widely used wide bandgap materials, plays a critical role in power industries by setting new standards in power savings as switches or rectifiers in the system for electric vehicles, wind turbines, solar cells, data centers, as well as high temperature and radiation tolerant electronic applications.

This Special Issue of Materials, entitled “Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects” is focused on recent progress in all topics related to SiC materials and devices. We invite submission of research articles (full papers, communications and reviews) focusing on recent developments in the synthesis, processing, design and characterization of SiC materials and devices, as well as its applications to systems.

We will accept articles in distinct areas of applications and a wide range of topics on both experimental and theoretical works and the topics to be covered in this special issue covers will cover include, but are not limited to:

  • Bulk and Epitaxial Growth of SiC
  • Heterostructures or related materials (graphene, GaN, Ga2O3, ZnO, etc.) grown on SiC
  • Defect Analysis and Engineering
  • Device Design and Fabrication Processes in SiC
  • Packaging, Applications and Reliability for Power Electronics
  • Novel devices

Prof. Dr. Sang-Mo Koo
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • wide bandgap semiconductors
  • power devices
  • heterostructures on silicon carbide
  • device design in silicon carbide and related materials
  • defect analysis in silicon carbide and related materials
  • reliability of silicon cardbie based devices and system

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Published Papers (6 papers)

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Research

10 pages, 2360 KiB  
Article
The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
by Hanyuan Zhang, Shu Yang and Kuang Sheng
Materials 2020, 13(8), 1903; https://doi.org/10.3390/ma13081903 - 17 Apr 2020
Cited by 7 | Viewed by 2392
Abstract
Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical sensors and biosensors in the liquid [...] Read more.
Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical sensors and biosensors in the liquid environment. One of the key factors limiting the wide adoption of the AlGaN/GaN liquid sensor is the package reliability issue. In this paper, the reliability of three types of sensor packaging materials (SiO2/Si3N4, PI, and SiO2/Si3N4/PI) on top of 5-μm metal are tested in Phosphate buffer saline (PBS) solution. By analyzing the I-V characteristics, it is found that the leakage currents within different regimes follow distinct leakage models, whereby the key factors limiting the leakage current are identified. Moreover, the physical mechanisms of the package failure are illustrated. The failure of the SiO2/Si3N4 package is due to its porous structure such that ions in the solution can penetrate into the packaging material and reduce its resistivity. The failure of the PI package at a relatively low voltage (<3 V) is mainly due to the poor adhesion of PI to the AlGaN surface such that the solution can reach the electrode by the “lateral drilling” effect. The SiO2/Si3N4/PI package achieves less than 10 μA leakage current at 5 V voltage stress because it combines the advantages of the SiO2/Si3N4 and the PI packages. The analysis in this work can provide guidelines for the design and failure mechanism analysis of packaging materials. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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10 pages, 4152 KiB  
Article
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
by Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, Kwang-Seok Seo and Ho-Young Cha
Materials 2020, 13(7), 1538; https://doi.org/10.3390/ma13071538 - 27 Mar 2020
Cited by 18 | Viewed by 4623
Abstract
This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain [...] Read more.
This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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10 pages, 5468 KiB  
Article
Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation
by Minh-Tan Ha, Le Van Lich, Yun-Ji Shin, Si-Young Bae, Myung-Hyun Lee and Seong-Min Jeong
Materials 2020, 13(3), 651; https://doi.org/10.3390/ma13030651 - 1 Feb 2020
Cited by 6 | Viewed by 3773
Abstract
Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as [...] Read more.
Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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8 pages, 1998 KiB  
Article
High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices
by Seong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, Jong-Min Oh and Sang-Mo Koo
Materials 2020, 13(2), 445; https://doi.org/10.3390/ma13020445 - 17 Jan 2020
Cited by 19 | Viewed by 4165
Abstract
Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in [...] Read more.
Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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8 pages, 4211 KiB  
Article
Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes
by Young-Jae Lee, Michael A. Schweitz, Jong-Min Oh and Sang-Mo Koo
Materials 2020, 13(2), 434; https://doi.org/10.3390/ma13020434 - 16 Jan 2020
Cited by 20 | Viewed by 3826
Abstract
Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. [...] Read more.
Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of β-Ga2O3 {(−201), (−401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N2-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga2O3 film and Ga2O3–metal interface. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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9 pages, 4945 KiB  
Article
Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC
by Chiashain Chuang, Chieh-Wen Liu, Yanfei Yang, Wei-Ren Syong, Chi-Te Liang and Randolph E. Elmquist
Materials 2019, 12(17), 2696; https://doi.org/10.3390/ma12172696 - 23 Aug 2019
Cited by 2 | Viewed by 3306
Abstract
Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-power devices, LEDs, atomically thin [...] Read more.
Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-power devices, LEDs, atomically thin electronics, and high-frequency devices, all of which can be prepared on the same SiC substrate. In this paper, we concentrate on detailed measurements on ultralow-density p-type monolayer epitaxial graphene, which has yet to be extensively studied. The measured resistivity ρxx shows insulating behavior in the sense that ρxx decreases with increasing temperature T over a wide range of T (1.5 K ≤ T ≤ 300 K). The crossover from negative magnetoresistivity (MR) to positive magnetoresistivity at T = 40 K in the low-field regime is ascribed to a transition from low-T quantum transport to high-T classical transport. For T ≥ 120 K, the measured positive MR ratio [ρxx(B) − ρxx(B = 0)]/ρxx(B = 0) at B = 2 T decreases with increasing T, but the positive MR persists up to room temperature. Our experimental results suggest that the large MR ratio (~100% at B = 9 T) is an intrinsic property of ultralow-charge-density graphene, regardless of the carrier type. This effect may find applications in magnetic sensors and magnetoresistance devices. Full article
(This article belongs to the Special Issue Silicon Carbide and Other Wide Bandgap Materials: Fundamentals, Device Applications and Future Prospects)
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