Advanced Ferroelectric Materials Doped with Rare Earth Metal Elements
A special issue of Metals (ISSN 2075-4701). This special issue belongs to the section "Metallic Functional Materials".
Deadline for manuscript submissions: 30 April 2025 | Viewed by 33
Special Issue Editor
Interests: dielectric energy storage materials and pulsed energy storage devices; pyroelectric energy harvesting; lead-free pizeoeceramics; electrocaloric cooling
Special Issue Information
Dear Colleagues,
Rare earth-doped perovskite-structured (ABO3) ferroelectric materials are increasingly pivotal in the current electronics and electrical equipment industry. Rare earth elements such as samarium (Sm) exhibit high solubility in ABO3-type ferroelectrics (e.g., BaTiO3, NaNbO3), enabling diverse modifications to their properties. It is well established that characteristics like electrical resistance, dielectric constant, polarization, and transition temperature can be effectively controlled through doping with appropriate rare earth metal cations. Consequently, these materials find extensive applications in electromechanical and electro-optical systems, pyroelectric detectors, piezoelectric actuators, dielectric energy storage ceramics, microelectromechanical systems (MEMSs), ferroelectric random access memory (FeRAM), and microwave devices, particularly in telecommunications and satellite broadcasting systems. In this Special Issue, we welcome contributions on advanced preparation methods for rare earth metal-doped perovskite ferroelectric materials, theoretical studies including first-principles calculations, research on the regulation of microstructure and electrical properties, and their applications in fields such as piezoelectricity, pyroelectricity, electrocaloric cooling, and dielectric energy storage.
Dr. Bing Xie
Guest Editor
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Keywords
- advanced preparation process
- theoretical calculation studies
- microstructure regulation
- electrical properties
- piezoelectricity
- pyroelectricity
- electrocaloric cooling
- dielectric energy storage
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