We prepared antimony metal films via electrodeposition, followed by the synthesis of Sb
2S
3 films through a chemical vapor phase reaction. Finally, an Sb
2O
3 film was deposited onto the Sb
2S
3 film using a chemical bath
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We prepared antimony metal films via electrodeposition, followed by the synthesis of Sb
2S
3 films through a chemical vapor phase reaction. Finally, an Sb
2O
3 film was deposited onto the Sb
2S
3 film using a chemical bath method, successfully constructing a heterojunction photocathode of Sb
2S
3/Sb
2O
3; the synthesized Sb
2S
3/Sb
2O
3 heterojunction is classified as a Type I heterostructure. The resulting Sb
2S
3/Sb
2O
3 heterojunction exhibited a photocurrent density of −0.056 mA cm
−2 at −0.15 V (vs. RHE), which is 1.40 times higher than that of Sb
2S
3 alone under simulated solar illumination. Additionally, the Sb
2S
3/Sb
2O
3 heterojunction demonstrated a lower carrier recombination rate and a faster charge transfer rate compared to Sb
2S
3, as evidenced by photoluminescence and electrochemical impedance spectroscopy tests. For these reasons, the Sb
2S
3/Sb
2O
3 heterojunction obtained a hydrogen precipitation rate of 0.163mL cm
−2 h
−1, which is twice the hydrogen precipitation rate of Sb
2S
3, under the condition of 60 min of light exposure. The significant enhancement in photoelectrochemical performance is attributed to the formation of the Sb
2S
3/Sb
2O
3 heterojunction, which improves both carrier separation and charge transfer efficiency. This heterojunction strategy holds promising potential for visible light-driven photoelectrochemical water splitting.
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