Advances in Memristors, Memristive Devices and Systems

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: closed (30 April 2023) | Viewed by 3802

Special Issue Editor


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Guest Editor
School of Electronics Engineering, Kyungpook National University, 80 Daehakro, Bukgu 41566, Daegu, Republic of Korea
Interests: memristor; in-memory computing; nonvolatile memory

Special Issue Information

Dear Colleagues,

With the recent advances in artificial intelligence (AI) technology, memristor devices and systems have received significant interest as a building block for deep neural network and spiking neural network. A two-terminal memristor device has been developed for highly scalable and low-energy consuming electronic synapse and neuron devices. The functions of biological synapses and neurons can easily be emulated using the memristor device, including long and short-term potentiation/depression, spike-timing dependent plasticity, and leaky integrate-and fire. Using these unique features of memristor, the memristor system has successfully demonstrated various neural networks such as deep neural network, convolutional neural network, recurrent neural network, reinforcement learning, and spiking neural network. These demonstrations increase researchers’ access to memristor devices and systems and speed up the development of hardware-based in memory computing for energy-efficient AI technology. Therefore, the goal of this Special Issue is to present research papers and review articles that focus on novel device engineering in memristors and its use for various neural network applications.

Dr. Byung Chul Jang
Guest Editor

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Keywords

  • memristor
  • memristive system
  • neuromorphic computing
  • nonvolatile logic-in-memory circuit
  • in-memory computing

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Published Papers (2 papers)

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Research

19 pages, 7595 KiB  
Article
A Compact Fully Electronically Tunable Memristive Circuit Based on CCCDTA with Experimental Results
by Deniz Ozenli
Micromachines 2023, 14(8), 1484; https://doi.org/10.3390/mi14081484 - 25 Jul 2023
Cited by 1 | Viewed by 888
Abstract
This work presents a flux-controlled memristor structure employing a Current-Controlled Current Differencing Transconductance Amplifier (CCCDTA) with a grounded capacitor. The proposed emulator’s invariant and variant parts can be safely adjustable, showing promising characteristics of up to 1.5 MHz operating frequency. Furthermore, there is [...] Read more.
This work presents a flux-controlled memristor structure employing a Current-Controlled Current Differencing Transconductance Amplifier (CCCDTA) with a grounded capacitor. The proposed emulator’s invariant and variant parts can be safely adjustable, showing promising characteristics of up to 1.5 MHz operating frequency. Furthermore, there is no need for an additional circuit, switching mechanism or changing the circuit topology for the changing of operation modes. To justify the performance of the emulator with incremental and decremental mode operations, a Monte Carlo and temperature analysis are validated using TSMC 0.18 µm technology under a symmetrical supply voltage of ±0.9 V. Furthermore, the workability of the proposed circuit is tested with commercial elements such as ALD1116, AD844 and LM13700. When compared with other studies, the presented emulator circuit demonstrates promising performance in various features. Full article
(This article belongs to the Special Issue Advances in Memristors, Memristive Devices and Systems)
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11 pages, 1725 KiB  
Article
Amorphous ITZO-Based Selector Device for Memristor Crossbar Array
by Ki Han Kim, Min-Jae Seo and Byung Chul Jang
Micromachines 2023, 14(3), 506; https://doi.org/10.3390/mi14030506 - 22 Feb 2023
Cited by 3 | Viewed by 2498
Abstract
In the era of digital transformation, a memristor and memristive circuit can provide an advanced computer architecture that efficiently processes a vast quantity of data. With the unique characteristic of memristor, a memristive crossbar array has been utilized for realization of nonvolatile memory, [...] Read more.
In the era of digital transformation, a memristor and memristive circuit can provide an advanced computer architecture that efficiently processes a vast quantity of data. With the unique characteristic of memristor, a memristive crossbar array has been utilized for realization of nonvolatile memory, logic-in-memory circuit, and neuromorphic system. However, the crossbar array architecture suffers from leakage of current, known as the sneak current, which causes a cross-talk interference problem between adjacent memristor devices, leading to an unavoidable operational error and high power consumption. Here, we present an amorphous In-Sn-Zn-O (a-ITZO) oxide semiconductor-based selector device to address the sneak current issue. The a-ITZO-selector device is realized with the back-to-back Schottky diode with nonlinear current-voltage (I-V) characteristics. Its nonlinearity is dependent on the oxygen plasma treatment process which can suppress the surface electron accumulation layer arising on the a-ITZO surface. The a-ITZO-selector device shows reliable characteristics against electrical stress and high temperature. In addition, the selector device allows for a stable read margin over 1 Mbit of memristor crossbar array. The findings may offer a feasible solution for the development of a high-density memristor crossbar array. Full article
(This article belongs to the Special Issue Advances in Memristors, Memristive Devices and Systems)
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