RF and Power Electronic Devices and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 March 2025 | Viewed by 89

Special Issue Editors


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Guest Editor
State Key Lab of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Interests: Semiconductor characterization, active gate driver; high-frequency power converter
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State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: wide-bandgap semiconductor device; GaN HEMT; RF and mmWave devices; high-frequency applications

Special Issue Information

Dear Colleagues,

The advent of 5G and beyond 5G (B5G) wireless networks is revolutionizing connectivity, enabling faster speeds and significantly enhancing the quality of life through applications like smart cities, autonomous vehicles, and the Internet of Things (IoT). Concurrently, electric vehicles (EVs) are capturing an increasing share of the market, promising a more efficient and sustainable future by reducing carbon emissions and reliance on fossil fuels. These advancements create substantial demands for high-performance semiconductor devices, particularly in the fields of RF and power electronics, where wide-bandgap (WBG) devices are playing a crucial role in achieving superior efficiency and reliability.

This Special Issue aims to gather cutting-edge developments in novel RF and power electronics devices and their applications. We welcome contributions covering, but not limited to, the following topics:

Wide-bandgap devices (GaN, Ga2O3, AlN, etc.) and applications;

High-frequency RF/mmWave device and applications;

Advanced device processing;

Device reliability;

Device characterization;

Gate driver design for semiconductors;

WBG-based power converters.

We invite researchers and industry experts to submit their latest findings and reviews to contribute to the advancement of this dynamic field.

Dr. Yuqi Wei
Dr. Hao Lu
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • gallium nitride HEMT
  • power electronics
  • RF and mmWave device
  • power converter

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Published Papers

This special issue is now open for submission.
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