Frontiers in Transistor and Memristor Based Devices

Dear Colleagues, 

The current development of the internet of things (IoT), artificial intelligence (AI), and wearable systems provide a higher requirement for electronic devices with the outstanding ability to process massive amounts of data. Devices based on transistors and memristors have received extensive attention due to their fast processing speed, low energy consumption, and excellent compatibility for computer architecture. With the discovery and application of advanced materials such as nanoscale oxides with high carrier mobility, organic biomass with good degradability, photosensitive perovskites with high optical sensitivity efficiency, and low-dimensional nanomaterials with flexible bandgap modulation, the cutting-edge device performance of transistor- and memristor-based devices has been revealed (e.g., artificial synaptic performance and in-memory computing performance). One of the typical examples is static pattern recognition in handwritten Arabic numbers based on the photo-induced artificial synaptic long-term potentiation and depression response of transistors and memristors. These superiorities indicate that it is worth exploring bionic neural network systems based on these emerging transistor and memristor devices with advanced materials. Besides, the unique characteristics of various materials are dominating factors affecting the performance of film devices like transistors and memristors, which often have a great relationship with thin-film fabrication methods such as laser-focused atomic deposition, chemical vapor deposition, solution-processable spin-coating, and sputtering. Therefore, this Special Issue seeks to showcase research papers and review articles that focus on the emerging artificial intelligence applications of transistor- and memristor-based devices with emerging or advanced nanomaterials. 

We look forward to receiving your submissions!

Prof. Dr. Chun Zhao
Dr. Zongjie Shen
Guest Editors

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