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Recent Advancements in Semiconductor Materials
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Recent Advancements in Semiconductor Materials

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Inorganic Chemistry".

Deadline for manuscript submissions: 30 April 2025 | Viewed by 1173

Special Issue Editor

Dr. Dazheng Chen

E-Mail Website
Guest Editor
National Engineering Research Center of Wide Band-Gap Semiconductor, Wide Bandgap Semiconducor Technology Disciplines State Key Laboratory, Shaanxi Jiont Key Laboratory of Graphene, School of microelectronics, Xidian University, Xi'an 710071, China
Interests: organic and perovskite materials and photovoltaic devices; nitride semiconductor materials and power devices; flexible electronic devices and intergration
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductors are used as active materials in diodes, transistors, integrated circuits, solar cells, sensors, and lasers, which have already penetrated every corner of the contemporary industrial system and human life. Undoubtedly, semiconductor materials have been the cornerstone of modern technology and information society. These materials include element semiconductors, inorganic compound conductors, organic compound semiconductors, and amorphous and liquid semiconductors. Nowadays, existing semiconductor materials are reaching their physical limitations, and increasing new applications are driving demand for even smaller, lighter, and more powerful semiconductors; thus, scientists have been committed to promoting high-quality research in new semiconductor materials.

This Special Issue aims to collect recent advancements in semiconductor materials, including their design, growth, characterization, and device or circuit application. In addition to original research papers, comprehensive review articles are also welcome.

Dr. Dazheng Chen
Guest Editor

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Keywords

  • element semiconductor
  • inorganic compound semiconductor
  • organic compound semiconductor
  • semiconductor material design
  • semiconductor material growth
  • semiconductor material characterization
  • semiconductor materials for optoelectronic devices
  • semiconductor materials for electronic devices
  • semiconductor materials for sensors
  • semiconductor materials for novel devices

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Published Papers (2 papers)

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Research

21 pages, 9966 KiB  
Article
Optimization of Zinc and Aluminum Hydroxyquinolines for Applications as Semiconductors in Molecular Electronics
by María Elena Sánchez Vergara, Francisco Iñaki Díaz Morales, Bertha Molina, Edgar Alvarez-Zauco, Lourdes Bazán-Díaz and Roberto Salcedo
Molecules 2025, 30(9), 1896; https://doi.org/10.3390/molecules30091896 - 24 Apr 2025
Abstract
This work explores the dispersed heterojunction of tris-(8-hydroxyquinoline) aluminum (AlQ3) and 8-hydroxyquinoline zinc (ZnQ2) with tetracyanoquinodimethane (TCNQ) and 2,6-diaminoanthraquinone (DAAq). Thin films of these organic semiconductors were deposited and analyzed, with their structures calculated with the B3PW91/6-31G** method. The [...] Read more.
This work explores the dispersed heterojunction of tris-(8-hydroxyquinoline) aluminum (AlQ3) and 8-hydroxyquinoline zinc (ZnQ2) with tetracyanoquinodimethane (TCNQ) and 2,6-diaminoanthraquinone (DAAq). Thin films of these organic semiconductors were deposited and analyzed, with their structures calculated with the B3PW91/6-31G** method. The optimized structure for AlQ3-TCNQ, AlQ3-DAAq, is achieved by means of three hydrogen bonds, whereas for ZnQ2-DAAq, two hydrogen interactions are predicted. These structures were recalculated including the GD3 dispersion term. A stable ordering was also achieved for AlQ3-TCNQ-GD3, AlQ3-DAAq-GD3, and ZnQ2-DAAq-GD3 with four and two hydrogen contacts for the former and the two latter, respectively. Infrared (IR) and UV-visible spectroscopy confirmed these theoretical predictions, in addition to obtaining the optical band gap for the films. The optical band gap values ranged between 1.62 and 2.97 eV (theoretical) and between 2.46 and 2.87 eV (experimental). Additional optical parameters and electrical behavior were obtained, which indicates the potential of the films to be used as organic semiconductors. All three films showed transmittance above 76%, which also broadens the range of applications in electrodes, transparent transistors, or photovoltaic cells. Devices fabricated using these materials displayed ohmic electrical behavior, with peak current values between 2 × 10−3 and 6 × 10−3 A. Full article
(This article belongs to the Special Issue Recent Advancements in Semiconductor Materials)
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11 pages, 9659 KiB  
Article
Fabrication of Bifacial-Modified Perovskites for Efficient Semitransparent Solar Cells with High Average Visible Transmittance
by Dazheng Chen, Wenjing Shi, Yan Gao, Sai Wang, Baichuan Tian, Zhizhe Wang, Weidong Zhu, Long Zhou, He Xi, Hang Dong, Wenming Chai, Chunfu Zhang, Jincheng Zhang and Yue Hao
Molecules 2025, 30(6), 1237; https://doi.org/10.3390/molecules30061237 - 10 Mar 2025
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Abstract
Semitransparent perovskite solar cells (PSCs) that possess a high-power conversion efficiency (PCE) and high average visible light transmittance (AVT) can be employed in applications such as photovoltaic windows. In this study, a bifacial modification comprising a buried layer of [4-(3,6-Dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid [...] Read more.
Semitransparent perovskite solar cells (PSCs) that possess a high-power conversion efficiency (PCE) and high average visible light transmittance (AVT) can be employed in applications such as photovoltaic windows. In this study, a bifacial modification comprising a buried layer of [4-(3,6-Dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz) and a surface passivator of 2-(2-Thienyl) ethylamine hydroiodide (2-TEAI) was proposed to enhance device performance. When the concentrations of Me-4PACz and 2-TEAI were 0.3 mg/mL and 3 mg/mL, opaque PSCs with a 1.57 eV perovskite absorber achieved a PCE of 22.62% (with a VOC of 1.18 V) and retained 88% of their original value after being stored in air for 1000 h. By substituting a metal electrode with an indium zinc oxide electrode, the resulting semitransparent PSCs showed a PCE of over 20% and an AVT of 9.45%. It was, therefore, suggested that the synergistic effect of Me-4PACz and 2-TEAI improved the crystal quality of perovskites and the carrier transport in devices. When employing an absorber with a wider bandgap (1.67 eV), the corresponding PSC obtained a higher AVT of 20.71% and maintained a PCE of 18.73%; these values show that a superior overall performance is observed compared to that in similar studies. This work is conductive to the future application of semitransparent PSCs. Full article
(This article belongs to the Special Issue Recent Advancements in Semiconductor Materials)
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