Wide Bandgap Semiconductor Material, Device and System Integration
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 6 July 2025 | Viewed by 130
Special Issue Editors
Interests: GaN power devices and system integration; complementary metal oxide semiconductor (CMOS) devices and processes; novel ultra-high density memories; electronic ceramics
Special Issues, Collections and Topics in MDPI journals
Interests: GaN devices and power system; GaN radio frequency (RF) devices and power amplifier; GaN sensor
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wide Band-Gap (WBG) semiconductors are a class of materials characterized by a band-gap larger than traditional semiconductors like Si and GaAs. Notable WBG semiconductors include GaN, Ga2O3, SiC, ZnO, AlN, and diamond. WBG materials offer higher breakdown voltages, faster switching speeds, and superior thermal conductivity compared to Si, and these properties make them particularly attractive for use in electric vehicles (EVs), renewable energy systems, and advanced communications infrastructure. The field of WBG devices represents one of the most exciting frontiers in semiconductor technology, with the potential to revolutionize power electronics, communication systems, and optoelectronics.
As research progresses and manufacturing techniques improve, WBG devices will continue to push the boundaries of performance, efficiency, and reliability. The present Special Issue of Nanomaterials is aimed at providing a comprehensive platform for researchers to present innovative findings and applications related to WBG devices. More specifically, it covers common key technology research that study material properties, device performance, and system design of WBG devices, such as advancements in WBG device nanofabrication technology, novel device architectures and integration strategies, and characterization and testing methods for WBG devices. The above topics are just for your reference. Any related topics not mentioned above will also be acceptable for this Special Issue. We will invite contributions from leading groups in the field to share their insights on the current state-of-the-art in this rapidly evolving area.
Prof. Dr. Hongyu Yu
Prof. Dr. Qing Wang
Guest Editors
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Keywords
- wide band-gap power electronics and radio frequency (RF) devices
- advanced process technology
- materials growth and application
- device design and modeling
- device reliability
- system and module
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