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Nanomaterials
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Two-Dimensional Nanosheets: Synthesis and Applications
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Two-Dimensional Nanosheets: Synthesis and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (31 October 2022) | Viewed by 4838

Special Issue Editor

Prof. Dr. Isabel J. Ferrer

E-Mail Website
Guest Editor
Materials of Interest in Renewable Energies Group (MIRE Group), Universidad Autonoma de Madrid, 28049 Madrid, Spain
Interests: semiconducting thin films; transition metal sulfides; thermoelectricity; hydrogen photogeneration and storage; photoelectrocatalysis

Special Issue Information

Dear Colleagues,

“Nanosheets” have been mainly coined to refer to ultrathin films of two-dimensional (2D) materials which have had an explosive entrance into the field of new materials due to their remarkable properties versus their bulk counterparts. Since the discovery of graphene, many types of 2D nanosheets have emerged and attracted increasing interest, such as hexagonal boron nitrides (h-BNs), graphitic carbon nitride (g-C3N4), transition metal dichalcogenides (TMDs: MoSe2, MoS2, WS2), transition metal oxides (TMOs: MnO2, MoO3, etc.), layered double hydroxides (LDHs: Co(OH)2, Ni(OH)2, etc.), noble metal nanosheets, the X-ene family (silicene, germanene, stannene, and phosphorecene, etc.), and even metal–organic frameworks (MOFs). Although the 2D nanosheets investigated have been generally addressed to layered compounds, in which the atomic layers are covalently bonded by van der Waals forces, very recently, 2D nanosheets of non-layered materials have also begun being explored (ZnSe, PbS, CuI).

All these 2D materials exhibit a similar sheet-like morphology, but their different crystalline structure and composition provide them with versatile properties useful in a wide range of new advanced applications. They show unique thickness-dependent properties compared to zero-dimensional (0D) nanoparticles and one-dimensional (1D) nanowires. The extensive variety of applications emanating from the research on 2D nanosheets includes electronics (low-power sensors, field-effect transistors, spintronics), optoelectronics (photodetectors, light-emitting diodes), biomedical applications (drug delivery, wound treatments, flexible biodevices), photo- and electrocatalysis (proton transport membranes, solar fuels, gas evolution reactions, water splitting, fuel cells), energy harvesting (thermoelectric, solar conversion), and energy storage devices (electrodes in batteries and supercapacitors).

This Special Issue aims to collect a series of articles concerning the synthesis of nanosheets, covering different synthesis processes and materials, in addition to the most relevant applications in several fields.

Prof. Dr. Isabel J. Ferrer
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanosheets, two-dimensional materials
  • transition metal chalcogenides, metal oxides
  • carbon, and boron nitrides
  • synthesis of nanosheets
  • nanoelectronics
  • energy conversion, storage, and harvesting

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Published Papers (3 papers)

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Research

10 pages, 3407 KiB  
Article
In-Situ Chemical Thinning and Surface Doping of Layered Bi2Se3
by Yan Kang, Yinlong Tan, Renyan Zhang, Xiangnan Xie and Weihong Hua
Nanomaterials 2022, 12(21), 3725; https://doi.org/10.3390/nano12213725 - 23 Oct 2022
Cited by 2 | Viewed by 1592
Abstract
As a promising topological insulator, two-dimensional (2D) bismuth selenide (Bi2Se3) attracts extensive research interest. Controllable surface doping of layered Bi2Se3 becomes a crucial issue for the relevant applications. Here, we propose an efficient method for the [...] Read more.
As a promising topological insulator, two-dimensional (2D) bismuth selenide (Bi2Se3) attracts extensive research interest. Controllable surface doping of layered Bi2Se3 becomes a crucial issue for the relevant applications. Here, we propose an efficient method for the chemical thinning and surface doping of layered Bi2Se3, forming Se/Bi2Se3 heterostructures with tunable thickness ranging from a few nanometers to hundreds of nanometers. The thickness can be regulated by varying the reaction time and large-size few-layer Bi2Se3 sheets can be obtained. Different from previous liquid-exfoliation methods that require complex reaction process, in-situ and thickness-controllable exfoliation of large-size layered Bi2Se3 can be realized via the developed method. Additionally, the formation of Se nanomeshes coated on the Bi2Se3 sheets remarkably enhance the intensity of Raman vibration peaks, indicating that this method can be used for surface-enhanced Raman scattering. The proposed chemical thinning and surface-doping method is expected to be extended to other bulk-layered materials for high-efficient preparation of 2D heterostructures. Full article
(This article belongs to the Special Issue Two-Dimensional Nanosheets: Synthesis and Applications)
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9 pages, 11442 KiB  
Article
Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
by Te Jui Yen, Albert Chin, Weng Kent Chan, Hsin-Yi Tiffany Chen and Vladimir Gritsenko
Nanomaterials 2022, 12(2), 261; https://doi.org/10.3390/nano12020261 - 14 Jan 2022
Cited by 5 | Viewed by 2381
Abstract
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and [...] Read more.
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations. Full article
(This article belongs to the Special Issue Two-Dimensional Nanosheets: Synthesis and Applications)
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10 pages, 2865 KiB  
Communication
Synthesis of Atomically Thin h-BN Layers Using BCl3 and NH3 by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil
by Hongseok Oh and Gyu-Chul Yi
Nanomaterials 2022, 12(1), 80; https://doi.org/10.3390/nano12010080 - 29 Dec 2021
Cited by 6 | Viewed by 2542
Abstract
The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the [...] Read more.
The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl3 and NH3. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a polycrystalline structure. The relationship between growth temperature and crystallinity of the h-BN film is investigated using transmission electron microscopy and Raman spectroscopy. Investigation on the initial growth mode achieved by the suppression of precursor supply revealed the formation of triangular domains and existence of preferred crystal orientations. The possible growth mechanism of h-BN in this sequential-pulsed CVD is discussed. Full article
(This article belongs to the Special Issue Two-Dimensional Nanosheets: Synthesis and Applications)
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