Optical and Electrical Properties of Nanostructured Thin Films

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (20 February 2025) | Viewed by 5936

Special Issue Editor


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Guest Editor
Department of Material Science, Ruđer Bošković Institute, Zagreb, Croatia
Interests: thin films; quantum dots; self-assembly; germanium; GISAXS; magnetron sputtering deposition
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Special Issue Information

Dear Colleagues,

Nanostructured thin films represent an exciting class of materials with highly tunable and applicable properties. Their application has entered almost all areas of our lives, including important renewable energy sources, numerous modern electrical devices, as well as important biomedical applications, such as permanent implants. They exhibit many practical properties such as quantum confinement effects, surface plasmon resonance, multiple exciton generation, and many others. Therefore, research into the optical and electrical properties of nanostructured thin films represents a very important area of ​​research that is a source of innovation and development. Nanostructured materials also offer a multitude of new discoveries due to the various combinations of different materials, the many different shapes of nanostructures, as well as the specific nature of nano-objects, which often exhibit size- and shape-dependent electrical and optical properties.

This Special Issue focuses on advances in the development of nanostructured thin films with specific optical and electrical properties. These include many possible research areas including new understandings of their fundamental properties, advanced methods of producing such materials, methods of achieving certain effects, as well as the different applications of such materials based on these properties. Authors are cordially invited to contribute original research articles and review articles to this Special Issue. Potential topics, covering advances in the optical and electrical properties of nanostructured thin films, include, but are not limited to the following:

  1. Advanced production methods of nanostructured thin films;
  2. Semiconductor-based nanostructured thin films;
  3. Nanostructured thin films with metallic nanoparticles;
  4. Quantum confinement in nanostructured thin films;
  5. Plasmonic resonances in nanostructured thin films;
  6. Multiple exciton generation in nanostructured thin films;
  7. Specific properties of nanostructured thin films and their control;
  8. Applications of nanostructured thin films;
  9. Modeling of the optical and electrical properties of nanostructured thin films.

Dr. Maja Mičetić
Guest Editor

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Keywords

  • nanostructured thin films
  • quantum dots
  • nanoparticles
  • surface plasmon resonance
  • multiple exciton generation
  • optical properties
  • electrical properties
  • thin film deposition methods
  • modeling electrical and optical properties of thin films
  • applications of thin films

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Published Papers (2 papers)

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Research

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14 pages, 13722 KiB  
Article
3D Lattices of Core/Shell Ge/Mn Quantum Dots in an Alumina Matrix: Structure, Fabrication, and Photo-Electrical Properties
by Ivana Periša, Gabrijela Svalina, Mile Ivanda, Marija Tkalčević, Sigrid Bernstorff and Maja Mičetić
Nanomaterials 2024, 14(23), 1906; https://doi.org/10.3390/nano14231906 - 27 Nov 2024
Viewed by 853
Abstract
Materials consisting of quantum dots with a semiconductor-core, metal–shell structure often have exciting and tunable photo-electrical properties in a large range of values, and they are adjustable by core and shell structure parameters. Here, we investigated the influence of Mn-shell addition to Ge [...] Read more.
Materials consisting of quantum dots with a semiconductor-core, metal–shell structure often have exciting and tunable photo-electrical properties in a large range of values, and they are adjustable by core and shell structure parameters. Here, we investigated the influence of Mn-shell addition to Ge quantum dots formed in an alumina matrix by magnetron sputtering deposition. We show a well-achieved formation of the 3D regular lattices of Ge-core, Mn-rich shell quantum dots, which were achieved by self-assembled growth mode. Intermixing of Ge and Mn in the shell was observed. The optical, electrical, and photo-conversion properties were strongly affected by the addition of the Mn shell and its thickness. The shell induced changes in the optical gap of the materials and caused an increase in the material’s conductivity. The most significant changes occurred in the photo-electrical properties of the materials. Their quantum efficiency, i.e., the efficiency of the conversion of photon energy to the electrical current, was very strongly enhanced by the shell addition, though it depended on its thickness. The best results were obtained for the thinnest shell added to the Ge core, for which the maximal quantum efficiency was significantly enhanced by more than 100%. The effect was, evidently, the consequence of multiple exciton generation, which was enhanced by the shell addition. The obtained materials offer great potential for various applications in photo-sensitive devices. Full article
(This article belongs to the Special Issue Optical and Electrical Properties of Nanostructured Thin Films)
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Review

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18 pages, 7797 KiB  
Review
Monolithic Integration of GaN-Based Transistors and Micro-LED
by Honghui He, Jinpeng Huang, Tao Tao, Ting Zhi, Kaixin Zhang, Zhe Zhuang, Yu Yan and Bin Liu
Nanomaterials 2024, 14(6), 511; https://doi.org/10.3390/nano14060511 - 12 Mar 2024
Cited by 9 | Viewed by 4503
Abstract
Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods [...] Read more.
Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures with driving unit. Researchers take advantage of the high performance of the transistors to achieve low power consumption, high current gain, and fast response frequency. This paper gives a review of recent studies on the new integration methods of micro-LEDs with different types of transistors, including the integration with BJT, HEMT, TFT, and MOSFET. Full article
(This article belongs to the Special Issue Optical and Electrical Properties of Nanostructured Thin Films)
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