Simulation Study of Nanoelectronics

Dear Colleagues,

TCAD simulations have enabled extensive achievements in silicon-based semiconductor development. The rapid evolution of semiconductor technology has already seen carrier behaviors in integrated devices discussed within the quantum field. Moreover, numerous materials have been proposed to supplement the function of silicon in electronic devices. These developments mark progress in overcoming the challenges in TCAD simulations due to complex quantum effects and out-of-order systems.

The present Special Issue of Nanomaterials, entitled “Simulation Study of Nanoelectronics”, aims to present contemporary state-of-the-art methods for solving problems in the quantum transport simulation domain, such as establishing tight-binding models, introducing scattering, simulating out-of-order systems, and performing other relevant tasks. Based on these methods, we are also seeking to publish interesting simulation results on semiconductor materials that are also promising candidates for electronic applications in the future, such as two-dimensional materials, silicon carbide, and metal oxide semiconductors. We hope this Special Issue will advance our understanding of the complex physical behaviors of electrons in nanoscale materials and device structures.

Dr. Yawei Lv
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• simulation
• semiconductors
• quantum transport
• electronic devices
• TCAD

Title: A review of wide bandgap semiconductors from perspective of defects
Authors: Qiwei Shangguan, Yawei Lv, Lei Liao, Kenli Li, and Changzhong Jiang
Affiliation: Hunan University
Abstract: Although the irreplaceable position of silicon (Si) semiconductor material in the field of information has become a consensus, seeking new materials to expand the application range of semiconductor devices has never stopped. Among them, researches on wide bandgap semiconductors have already achieved preliminary success and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar with the history of Si, the immature material grown and device manufacturing processes at the current stage hinder the popularization of wide bandgap semiconductor-based applications seriously and the crucial issue behind is the defect problem. Here, we take the amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss the physical/mechanical property, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on the defect formation, evolution, and annihilation are summarized and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on the electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance.

Title: Simulation of novel nano-FETs based on two-dimensional materials
Authors: Pengwen Guo; Yuxue Zhou; Haolin Yang; Jiong Pan; Xinyuan Jia; Jiaju Yin; Bingchen Zhao; Shangjian Liu; Jiali Peng; Yi Yang; Tianling Ren
Affiliation: 1, School of Integrated Circuits, Tsinghua University, Beijing 100084, China 2, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China 3, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 4, Department of Chemistry, Tsinghua University, Beijing 100084, China 5, Xingjian College, Tsinghua University, Beijing 100084, China
Abstract: The short channel effect is gradually intensified with the continued reduction in transistor size, and the effective electrostatic control cannot be realized by relying on a single dimension material. High performance electronics can be achieved by van der Waals heterojunctions formed by quantum dots, nanotubes, atomic-thick films, and bulk materials. This work uses the technology computer-aided design (TCAD) to simulate hybrid heterojunction nano FETs with novel architecture, which provides a new idea for the design of the next generation of narrow-channel devices.