Structural Modeling and Theoretical Study of Low-Dimensional Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Theory and Simulation of Nanostructures".

Deadline for manuscript submissions: 20 January 2025 | Viewed by 1021

Special Issue Editors


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Guest Editor
1. School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
2. Institute of Atomic and Molecular Physics, Jilin University, Changchun, China
Interests: nano material; new energy material; piezoelectric materials

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Guest Editor
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, China
Interests: high pressure physics; metal-insulator transition; superconductivity

Special Issue Information

Dear Colleagues,

Recently, low-dimensional materials have been increasingly used in various applied fields (medical care, environment, new energy, etc.) due to their ultra-thin (fine) characteristics and excellent properties.

The Special Issue entitled "Structural Modeling and Theoretical Study of Low-Dimensional Materials” is centered on the research fields of materials, physics, chemistry, etc. The main topics found in this Issue are either aimed at predicting the existence and properties of advanced low-dimensional materials, or to verify the properties of the prepared low-dimensional materials via thorough analyses. These can help deepen our understanding of the internal physical mechanism of low-dimensional materials in order to improve and expand their practical applications.

At present, cutting-edge research on low-dimensional materials include topics on room-temperature superconductivity, topological insulators, ferroelectricity, catalysts, and so on. The study and progress of these topics will result in outstanding contributions to new energy and significantly aid in the sustainable development of human society.

We welcome researchers to submit their relevant research papers to this Special Issue. Researchers are encouraged to use theoretical study methods such as first-principle calculations. We look forward to your submission.

Sincerely,

Prof. Dr. Xiao-Chun Wang
Prof. Dr. Xilian Jin
Guest Editors

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Keywords

  • low-dimensional materials
  • nanomaterials
  • theoretical study
  • first-principle calculation
  • condensed matter physics
  • electronic structure
  • energy storage and conversion

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Published Papers (1 paper)

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Research

12 pages, 5082 KiB  
Article
Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion
by Sitong Liu, Xiao Shang, Xizhe Liu, Xiaochun Wang, Fuchun Liu and Jun Zhang
Nanomaterials 2024, 14(16), 1358; https://doi.org/10.3390/nano14161358 - 17 Aug 2024
Viewed by 622
Abstract
Recently, the application of two–dimensional (2D) piezoelectric materials has been seriously hindered because most of them possess only in–plane piezoelectricity but lack out–of–plane piezoelectricity. In this work, using first–principles calculation, by atomic substitution of penta–graphene (PG) with tiny out–of–plane piezoelectricity, we design and [...] Read more.
Recently, the application of two–dimensional (2D) piezoelectric materials has been seriously hindered because most of them possess only in–plane piezoelectricity but lack out–of–plane piezoelectricity. In this work, using first–principles calculation, by atomic substitution of penta–graphene (PG) with tiny out–of–plane piezoelectricity, we design and predict stable 2D X–PG (X = Si or Ge) semiconductors with excellent in–plane and out–of–plane piezoelectricity and extremely high in–plane hole mobility. Among them, Ge–PG exhibits better performance in all aspects with an in–plane strain piezoelectric coefficient d11 = 8.43 pm/V, an out–of–plane strain piezoelectric coefficient d33 = −3.63 pm/V, and in–plane hole mobility μh = 57.33 × 103 cm2 V−1 s−1. By doping Si and Ge atoms, the negative Poisson’s ratio of PG approaches zero and reaches a positive value, which is due to the gradual weakening of the structure’s mechanical strength. The bandgaps of Si–PG (0.78 eV) and Ge–PG (0.89 eV) are much smaller than that of PG (2.20 eV), by 2.82 and 2.47 times, respectively. This indicates that the substitution of X atoms can regulate the bandgap of PG. Importantly, the physical mechanism of the out–of–plane piezoelectricity of these monolayers is revealed. The super–dipole–moment effect proposed in the previous work is proved to exist in PG and X–PG, i.e., it is proved that their out–of–plane piezoelectric stress coefficient e33 increases with the super–dipole–moment. The e33–induced polarization direction is also consistent with the super–dipole–moment direction. X–PG is predicted to have prominent potential for nanodevices applied as electromechanical coupling systems: wearable, ultra–thin devices; high–speed electronic transmission devices; and so on. Full article
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