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Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application

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A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 9827

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Special Issue Editors

Prof. Dr. Da Zhan

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Guest Editor

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Interests: low-dimensional semiconductor; spectroscopic characterization; electronic band structure modulation; scanning probe microscope

Prof. Dr. Yufei Liu

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Guest Editor

Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Ministry of Education, Chongqing 400044, China
Interests: advanced sensing technology and systems; optoelectronic materials and devices; MEMS and microsystems

Dr. Wenxi Guo

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Guest Editor

Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
Interests: flexible electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Materials scaled down to the size of nano are normally too small to be seen with the naked eye and even with conventional optical microscopes, but nanostructures often present intriguing properties in physics, chemistry and biology. Low-dimensional semiconductor nanomaterials, including nanoparticles (0D); nanoribbons, nanowires and nanorods (1D); and atomic layered materials (2D), normally have exotic properties in electronics, optics and magnetics due to the quantum confinement effect. With the deep understanding of the exotic properties of low-dimensional semiconductor nanomaterials through the intensive and extensive fundamental studies of various nanostructure preparation and characterization approaches, related technology on the basis of using nanomaterials is thus becoming significant for its potential to change the daily lives of human beings. Innovations in nanotechnology are also changing dramatically with each passing day, from fundamental studies in research labs to practical industrial applications.

In this context, we, in collaboration with the Editors of Nanomaterials, are organizing a Special Issue on the topic of “Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization and Application”. The aim of this Special Issue is to elucidate the state-of-the-art of this fast-growing field of research from both fundamental and application perspectives. We are pleased to invite authors who have made important contributions to this field to submit articles in the form of full papers, communications, and reviews. The topics of interest include, but are not limited to, the following:

Nanostructure preparations of semiconductor materials and studies of the relevant novel properties in electronics, optics and magnetics;
Nanofabrication of semiconductor devices based on advanced nanotechnology;
Fundamental studies of novel physical properties of surfaces and interfaces of 2D semiconductor nanomaterials.

Prof. Dr. Da Zhan
Prof. Dr. Yufei Liu
Dr. Wenxi Guo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

Fullerenes
Nanowires
Nanoribbons
Graphene
Boron nitride
Transition metal dichalcogenides
Heterostructure
Thin film semiconductors

Published Papers (7 papers)

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Research

Jump to: Review

10 pages, 2182 KiB

Open AccessArticle

Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment

by Congzhi Bi, Tianyu Wu, Jingjing Shao, Pengtao Jing, Hai Xu, Jilian Xu, Wenxi Guo, Yufei Liu and Da Zhan

Nanomaterials 2024, 14(9), 750; https://doi.org/10.3390/nano14090750 - 25 Apr 2024

Viewed by 254

Abstract

Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium’s electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice breaking. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, we made a remarkable observation: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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8 pages, 3619 KiB

Open AccessCommunication

Optically Active Telecom Defects in MoTe₂ Fewlayers at Room Temperature

by Yuxin Lei, Qiaoling Lin, Sanshui Xiao, Juntao Li and Hanlin Fang

Nanomaterials 2023, 13(9), 1501; https://doi.org/10.3390/nano13091501 - 27 Apr 2023

Viewed by 1084

Abstract

The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe

_{2}

) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited [...] Read more.

The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe

_{2}

) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe

_{2}

fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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9 pages, 2771 KiB

Open AccessArticle

The Effect of the Pre-Strain Process on the Strain Engineering of Two-Dimensional Materials and Their van der Waals Heterostructures

by Jinkun Han, Xiaofei Yue, Yabing Shan, Jiajun Chen, Borgea G. M. Ekoya, Laigui Hu, Ran Liu, Zhijun Qiu and Chunxiao Cong

Nanomaterials 2023, 13(5), 833; https://doi.org/10.3390/nano13050833 - 23 Feb 2023

Cited by 1 | Viewed by 1622

Abstract

Two-dimensional (2D) materials and their van der Waals stacked heterostructures (vdWH) are becoming the rising and glowing candidates in the emerging flexible nanoelectronics and optoelectronic industry. Strain engineering proves to be an efficient way to modulate the band structure of 2D materials and their vdWH, which will broaden understanding and practical applications of the material. Therefore, how to apply desired strain to 2D materials and their vdWH is of great importance to get the intrinsic understanding of 2D materials and their vdWH with strain modulation. Here, systematic and comparative studies of strain engineering on monolayer WSe₂ and graphene/WSe₂ heterostructure are studied by photoluminescence (PL) measurements under uniaxial tensile strain. It is found that contacts between graphene and WSe₂ interface are improved, and the residual strain is relieved through the pre-strain process, which thus results in the comparable shift rate of the neutral exciton (A) and trion (A^T) of monolayer WSe₂ and graphene/WSe₂ heterostructure under the subsequent strain release process. Furthermore, the PL quenching occurred when the strain is restored to the original position also indicates the pre-strain process to 2D materials, and their vdWH is important and necessary for improving the interface contacts and reducing the residual strain. Thus, the intrinsic response of the 2D material and their vdWH under strain can be obtained after the pre-strain treatment. These findings provide a quick, fast and efficient way to apply desired strain and also have important significance in guiding the use of 2D materials and their vdWH in the field of flexible and wearable devices. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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7 pages, 1706 KiB

Open AccessArticle

Photoluminescence Modulation of Ruddlesden-Popper Perovskite via Phase Distribution Regulation

by Xinwei Zhao, Ting Zheng, Weiwei Zhao, Yuanfang Yu, Wenhui Wang and Zhenhua Ni

Nanomaterials 2023, 13(3), 571; https://doi.org/10.3390/nano13030571 - 31 Jan 2023

Viewed by 1208

Abstract

The intrinsic chaotic phase distribution in Ruddlesden-Popper Perovskite (RPP) hinders its further improvement of photoluminescence (PL) emission and limits its application in optical devices. In this work, we achieve the phase distribution regulation of RPP by varying the composition ratio of organic bulky spacer cations 1-naphthylmethylamine (NMA) and phenylethyl-ammonium (PEA), which is controllable and nondestructive for structures of RPP. By suppressing the small n-phase, the PL intensity emission of RPP is further improved. Through the time-resolved PL (TRPL) measurements, we find the PL lifetime of the sample with 66% PEA concentration increases with the temperature initially and possesses the highest values of

τ_{1}

and

τ_{2}

at ~255 K, indicating the immediate state assisting exciton radiative recombination, and it can be modulated by phase manipulation in RPP. The immediate state may outcompete other non-radiative decay channels for excited carriers, leading to the PL enhancement in RPP, and broadening its further application. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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Review

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14 pages, 2950 KiB

Open AccessReview

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

by Hyo Chan Hong, Jeong In Ryu and Hyo Chan Lee

Nanomaterials 2023, 13(15), 2217; https://doi.org/10.3390/nano13152217 - 30 Jul 2023

Cited by 1 | Viewed by 1139

Abstract

Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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24 pages, 16285 KiB

Open AccessReview

Theoretical Studies on the Quantum Capacitance of Two-Dimensional Electrode Materials for Supercapacitors

by Jianyan Lin, Yuan Yuan, Min Wang, Xinlin Yang and Guangmin Yang

Nanomaterials 2023, 13(13), 1932; https://doi.org/10.3390/nano13131932 - 25 Jun 2023

Cited by 6 | Viewed by 1733

Abstract

In recent years, supercapacitors have been widely used in the fields of energy, transportation, and industry. Among them, electrical double-layer capacitors (EDLCs) have attracted attention because of their dramatically high power density. With the rapid development of computational methods, theoretical studies on the physical and chemical properties of electrode materials have provided important support for the preparation of EDLCs with higher performance. Besides the widely studied double-layer capacitance (C_D), quantum capacitance (C_Q), which has long been ignored, is another important factor to improve the total capacitance (C_T) of an electrode. In this paper, we survey the recent theoretical progress on the C_Q of two-dimensional (2D) electrode materials in EDLCs and classify the electrode materials mainly into graphene-like 2D main group elements and compounds, transition metal carbides/nitrides (MXenes), and transition metal dichalcogenides (TMDs). In addition, we summarize the influence of different modification routes (including doping, metal-adsorption, vacancy, and surface functionalization) on the C_Q characteristics in the voltage range of ±0.6 V. Finally, we discuss the current difficulties in the theoretical study of supercapacitor electrode materials and provide our outlook on the future development of EDLCs in the field of energy storage. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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35 pages, 14831 KiB

Open AccessReview

Pyro-Phototronic Effect for Advanced Photodetectors and Novel Light Energy Harvesting

by Fangpei Li, Wenbo Peng, Yitong Wang, Mingyan Xue and Yongning He

Nanomaterials 2023, 13(8), 1336; https://doi.org/10.3390/nano13081336 - 11 Apr 2023

Cited by 6 | Viewed by 2067

Abstract

Pyroelectricity was discovered long ago and utilized to convert thermal energy that is tiny and usually wasted in daily life into useful electrical energy. The combination of pyroelectricity and optoelectronic yields a novel research field named as Pyro-Phototronic, where light-induced temperature variation of the pyroelectric material produces pyroelectric polarization charges at the interfaces of semiconductor optoelectronic devices, capable of modulating the device performances. In recent years, the pyro-phototronic effect has been vastly adopted and presents huge potential applications in functional optoelectronic devices. Here, we first introduce the basic concept and working mechanism of the pyro-phototronic effect and next summarize the recent progress of the pyro-phototronic effect in advanced photodetectors and light energy harvesting based on diverse materials with different dimensions. The coupling between the pyro-phototronic effect and the piezo-phototronic effect has also been reviewed. This review provides a comprehensive and conceptual summary of the pyro-phototronic effect and perspectives for pyro-phototronic-effect-based potential applications. Full article

(This article belongs to the Special Issue Low-Dimensional Semiconductor Nanomaterials: Preparation, Characterization, and Application)

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