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Nanomaterials
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Field-Effect Transistors Based on Two-Dimensional Materials
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Field-Effect Transistors Based on Two-Dimensional Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 1928

Special Issue Editors

Prof. Dr. Po-Tsun Liu

E-Mail Website
Guest Editor
Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: nanoscale FETs; thin film transistors; nanofabrication technologies; materials and optoelectronics
Prof. Dr. Der-Hsien Lien

E-Mail Website
Co-Guest Editor
Department of Electrical Engineering, National Chiao Tung University (NCTU), Hsinchu City 30010, Taiwan
Interests: electronic materials; smart electronics; photophysics of novel semiconductors, graphene, and 2D-layered materials
Special Issues, Collections and Topics in MDPI journals
Dr. Dun-Bao Ruan

E-Mail Website
Assistant Guest Editor
School of Microelectronics, Fuzhou University, Fuzhou 350002, China
Interests: thin-film transistor; high mobility device; high-k material; interfacial layer

Special Issue Information

Dear Colleagues,

The continuous downscaling of the channel length and thickness in modern field-effect transistors (FETs) has increased the need for atomically layered materials to minimize short channel effects at extreme scaling limits. Since the first single layer of graphite (graphene) was proposed, many researchers have developed more and more novel two-dimensional (2D) nanomaterials on FET devices, such as 2D chalcogenides, monoelement 2D materials, etc. These graphene-like materials offer the advantages of sizeable and non-zero bandgap, high on/off ratio and quasi-ideal subthreshold swing, mechanical flexibility, and thermal and chemical stability. Moreover, those graphene-like materials are also extensively used in various 2D/wearable technological applications, such as optoelectronics, energy, composites, sensing, filtration, nanocoating, life science, or even medicine.

This Special Issue will present comprehensive research outlining the progress in the application of FET devices with 2D materials. We invite authors to contribute original research articles and review articles covering the current progress on 2D material-based devices. Potential topics include, but are not limited to:

  • Two-dimensional Material Synthesis (Graphene, 2D chalcogenides, Monoelement 2D materials, etc.);
  • Two-dimensional Material Engineering (Interface, Surface, Heterostructures, Doping, etc.);
  • Two-dimensional Material Devices and Application (CMOS, TFT, Sensor, Memory, etc.);
  • Two-dimensional Material Physics (Materials Properties, Material analysis, Simulation, etc.);
  • Two-dimensional Material Reliability (Device reliability, Material stability, etc.).

Prof. Dr. Po-Tsun Liu
Prof. Dr. Der-Hsien Lien
Dr. Dun-Bao Ruan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • novel 2D material
  • 2D material fabrication method
  • 2D material analysis
  • 2D material engineering
  • advanced 2D device
  • 2D device reliability

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Published Papers (2 papers)

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Research

11 pages, 1906 KiB  
Article
Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures
by Sujoy Ghosh, Jie Zhang, Milinda Wasala, Prasanna Patil, Nihar Pradhan and Saikat Talapatra
Nanomaterials 2023, 13(16), 2333; https://doi.org/10.3390/nano13162333 - 14 Aug 2023
Cited by 2 | Viewed by 1703
Abstract
Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a [...] Read more.
Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS2 FETs, synthesized using the mechanical exfoliation of bulk MoS2 crystal, on the Si/SiO2 substrate. Our MoS2 FET show a room-temperature field-effect mobility μFE ~40 cm2·V−1·s−1, which increases with decreasing temperature, stabilizing at 80 cm2·V−1·s−1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, Peff (0.02 μW < Peff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW−1, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications. Full article
(This article belongs to the Special Issue Field-Effect Transistors Based on Two-Dimensional Materials)
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9 pages, 1830 KiB  
Article
Large-Scale MoS2 Pixel Array for Imaging Sensor
by Kang Liu, Xinyu Wang, Hesheng Su, Xinyu Chen, Die Wang, Jing Guo, Lei Shao, Wenzhong Bao and Honglei Chen
Nanomaterials 2022, 12(23), 4118; https://doi.org/10.3390/nano12234118 - 22 Nov 2022
Cited by 5 | Viewed by 2309
Abstract
Two-dimensional molybdenum disulfide (MoS2) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS2 phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS2 flakes, which is laboratory- feasible but not practical for [...] Read more.
Two-dimensional molybdenum disulfide (MoS2) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS2 phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS2 flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS2 growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS2 film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW−1, which is considerably superior to traditional CMOS sensors (≈0.1 AW−1). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS2 for future optoelectrical applications. Full article
(This article belongs to the Special Issue Field-Effect Transistors Based on Two-Dimensional Materials)
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