Semiconductor Lasers: Innovations, Challenges, and Future Perspectives

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 20 January 2025 | Viewed by 436

Special Issue Editors


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Guest Editor
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Interests: semiconductor laser; VCSEL; photonic integration

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Guest Editor
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China
Interests: tunable semiconductor lasers; mode-locked laser; optical detector; optoelectronic neuromorphic devices
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Special Issue Information

Dear Colleagues,

As one of the most commonly used coherent light sources today, semiconductor lasers are essential components in many optical systems, such as for optical communication, storage, sensing, and metrological applications, mainly as parts of photonic integrated systems. They can be linear Fabry-Pérot or ring-type lasers, operating in narrow linewidth, tunability, single frequency, multiple frequency, or pulsed. Their numerous applications are ever-increasing due to the unprecedented fabrication accuracy offered by photonic-integration technology, allowing total phase and intensity control of the generated laser light.

In such a well-defined embedded setting, the issues of reproducibility and long-term dynamic stability are becoming increasingly important and should be taken into account in the design and fabrication of such laser systems. Since precise control of the relevant parameters, such as cavity length, Bragg grating, and group velocities, is well feasible, knowledge of the dynamical behavior of semiconductor lasers in their dependence on parameter values can successfully be applied to optimal design.

This Special Issue aims at presenting original state-of-the-art research articles dealing with the dynamics and stability of semiconductor lasers in a broad sense, with special emphasis on their operation in a photonic integrated chip. Specifically, papers are solicited dealing with semiconductor lasers coupled to various kinds of external optical perturbations, such as delayed feedback, delayed coupling, optical injection, photonic nerve signal injection, etc. Researchers are invited to submit their contributions to this Special Issue. Topics include, but are not limited to:

  • Semiconductor lasers;
  • Dynamics and stability;
  • Narrow linewidth lasers;
  • Feedback-induced dynamics;
  • VCSELs;
  • Ring lasers;
  • Semiconductor disk lasers;
  • Neuromorphic computing based on semiconductor lasers;
  • Quantum dot lasers;
  • Frequency combs;
  • Integrated lasers;
  • Pulse lasers.

Dr. Yongqiang Ning
Dr. Xiaoying He
Guest Editors

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Keywords

  • VCSEL
  • semiconductor lasers
  • integrated lasers
  • semiconductor disk lasers
  • dynamics and stability

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Published Papers (1 paper)

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Research

10 pages, 4838 KiB  
Article
The Effect of Lens Focal Length on the Output Characteristics of 1.55 μm Tunable External-Cavity Semiconductor Lasers
by Xuan Li, Linyu Zhang, Wei Luo, Junce Shi, Zhaoxuan Zheng, Huiyin Kong, Meiye Qiu, Kangxun Sun, Zaijin Li, Yi Qu, Zhongliang Qiao and Lin Li
Photonics 2024, 11(9), 809; https://doi.org/10.3390/photonics11090809 - 29 Aug 2024
Viewed by 255
Abstract
The 1.55 μm TECSL has excellent characteristics such as wide tuning, narrow linewidth, high SMSR, and high output power and has a wide range of applications in optical communications, spectral sensing, gas detection, atomic physics, and biomedicine. For the TECSL, the choice of [...] Read more.
The 1.55 μm TECSL has excellent characteristics such as wide tuning, narrow linewidth, high SMSR, and high output power and has a wide range of applications in optical communications, spectral sensing, gas detection, atomic physics, and biomedicine. For the TECSL, the choice of collimating lens is very significant. In order to obtain a wider tuning range, five structures are constructed in this paper to investigate the effect of lens focal length on the output characteristics of 1.55 μm TECSL. It is shown that when the lens focal length is 4.51 mm, the minimum threshold current is 52 mA, the maximum output power is 42.36 mW, the maximum SMSR is 62.15 dB, the narrowest linewidth is 0.26 nm, and 152.3 nm (1458.2~1610.5 nm) can be tuned continuously. It is shown that different lens focal lengths affect the output characteristics of the TECSL, and the performance of the TECSL can be improved by appropriately changing the lens focal length. Full article
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