New Advances in Semiconductor Optoelectronic Materials and Devices

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (20 July 2025) | Viewed by 3651

Special Issue Editors


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Guest Editor
Department of Physics, Wuhan University of Technology, No. 122 Luoshi Road, Wuhan 430070, China
Interests: widespread over strain; temperature; gas; biomedical optical sensors and their application

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Guest Editor
Department of Physical Science & Technology, Wuhan University of Technology, Wuhan 430070, China
Interests: semiconductor material; semiconductor device, synthesis; characterization; modelling
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Special Issue Information

Dear Colleagues,

In recent years, semiconductors have become a key element in the development of optoelectronic materials and devices. Their significant employment is undoubtedly related to their suitability in the development of a broad range of applications, including lasers, photodetectors, photovoltaics, optical amplifiers and so on.

We are pleased to invite you to contribute to this Special Issue, entitled “New Advances in Semiconductor Optoelectronic Materials and Devices”. This Special Issue aims to cover all recent advancements in theoretical and experimental aspects related to silicon, low-dimension materials, III-V semiconductors, perovskites and organic semiconductors, and their employment in devices.

Topics of interest for this Special Issue include the synthesis, characterization, and fabrication of optoelectronic materials, the study of electronic, optical, mechanical and thermal properties, as well as technological applications of optoelectronic devices.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • The synthesis and characterization of optoelectronic materials;
  • The Modeling of optoelectronic material properties;
  • Optoelectronic device design and characterization;
  • Optoelectronic devices for innovative applications.

We look forward to receiving your contributions.

Prof. Dr. Min Li
Dr. Shuo Deng
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic materials
  • semiconductor
  • optoelectronic device
  • synthesis
  • characterization
  • modeling

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Published Papers (2 papers)

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Research

14 pages, 2622 KB  
Article
Enhancing the Solar-Blind UV Detection Performance of β-Ga2O3 Films Through Oxygen Plasma Treatment
by Rongxin Duan, Guodong Wang, Lanlan Guo, Yuechao Wang, Yumeng Zhai, Xiaolian Liu, Junjun Wang, Yingli Yang and Xiaojie Yang
Photonics 2025, 12(11), 1074; https://doi.org/10.3390/photonics12111074 - 30 Oct 2025
Cited by 1 | Viewed by 815
Abstract
This study systematically investigated the effects of oxygen plasma treatment on oxygen vacancy defects in sputtered β-gallium oxide (β-Ga2O3) films and their corresponding ultraviolet (UV) detection performance. The sputtered β-Ga2O3 film subjected [...] Read more.
This study systematically investigated the effects of oxygen plasma treatment on oxygen vacancy defects in sputtered β-gallium oxide (β-Ga2O3) films and their corresponding ultraviolet (UV) detection performance. The sputtered β-Ga2O3 film subjected to 1 min of oxygen plasma treatment exhibited optimal photodetection properties. Compared to the untreated sample, the dark current was reduced by approximately one order of magnitude to 0.378 pA at 10 V bias. It exhibited an 86% (from 2.92 s to 0.41 s) decrease in response time, a 41.6% increase in photocurrent, a very high photo-to-dark current ratio of 9.18 × 105, and a specific detectivity of 2.62 × 1010 cm·Hz1/2W−1 under 254 nm UV illumination intensity of 799 μW/cm2 at 10 V bias. Notably, appropriate oxygen plasma treatment minimizes electron capture, enhances the separation and collection of photogenerated carriers, and suppresses the persistent photoconductivity (PPC) effect, thus ultimately shortening the response time. Oxygen plasma processing thus provides an effective approach to fabricating high-performance β-Ga2O3 solar-blind photodetectors (SBPDs). Full article
(This article belongs to the Special Issue New Advances in Semiconductor Optoelectronic Materials and Devices)
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15 pages, 7746 KB  
Article
Design of Gallium Nitride-Based Photodetector for Enhanced Accuracy in Solar Ultraviolet Index Monitoring
by Hanlin Li, Wenhao Li, Tianxiang Liu, Yiman Xu, Dongze He and Jun Wang
Photonics 2024, 11(9), 812; https://doi.org/10.3390/photonics11090812 - 29 Aug 2024
Cited by 2 | Viewed by 2182
Abstract
Monitoring the solar ultraviolet index (UVI) is of great significance to protect human health. The monitoring of UVI faces several challenges: the accuracy is difficult to control, the complexity of the filter, the increase in volume and price, the decrease in response sensitivity, [...] Read more.
Monitoring the solar ultraviolet index (UVI) is of great significance to protect human health. The monitoring of UVI faces several challenges: the accuracy is difficult to control, the complexity of the filter, the increase in volume and price, the decrease in response sensitivity, and the low accuracy of measurement. Considering the limitations and insufficiencies in the current technology, this paper proposes a miniature gallium nitride (GaN)-based erythema response detector. The detector utilizes a double-diode integrated chip for accurate detection of the erythema response, enabling it to closely match the spectral response of the erythema spectrum curve determined by the World Health Organization. This ensures precise correspondence between the output current and ultraviolet index. The measurement error of each UV detector is determined by analyzing eight sets of UV radiation spectra. The experimental findings demonstrate that the proposed detector exhibits a measurement error below 0.4 for each group of UV index measurements. The experimental results show that the measurement accuracy of the detector on the ultraviolet index is at the advanced level compared to the current mainstream commercial ultraviolet detector. Full article
(This article belongs to the Special Issue New Advances in Semiconductor Optoelectronic Materials and Devices)
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