New Advances in Semiconductor Optoelectronic Materials and Devices

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 15 December 2024 | Viewed by 793

Special Issue Editors


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Guest Editor
Department of Physics, Wuhan University of Technology, No. 122 Luoshi Road, Wuhan 430070, China
Interests: widespread over strain; temperature; gas; biomedical optical sensors and their application

E-Mail Website
Guest Editor
Department of Physics, Wuhan University of Technology, No. 122 Luoshi Road, Wuhan 430070, China
Interests: the theoretical and experimental investigation about semiconductor and their application in optoelectronic devices and triboelectric-nanogenerators

Special Issue Information

Dear Colleagues,

In recent years, semiconductors have become a key element in the development of optoelectronic materials and devices. Their significant employment is undoubtedly related to their suitability in the development of a broad range of applications, including lasers, photodetectors, photovoltaics, optical amplifiers and so on.

We are pleased to invite you to contribute to this Special Issue, entitled “New Advances in Semiconductor Optoelectronic Materials and Devices”. This Special Issue aims to cover all recent advancements in theoretical and experimental aspects related to silicon, low-dimension materials, III-V semiconductors, perovskites and organic semiconductors, and their employment in devices.

Topics of interest for this Special Issue include the synthesis, characterization, and fabrication of optoelectronic materials, the study of electronic, optical, mechanical and thermal properties, as well as technological applications of optoelectronic devices.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • The synthesis and characterization of optoelectronic materials;
  • The Modeling of optoelectronic material properties;
  • Optoelectronic device design and characterization;
  • Optoelectronic devices for innovative applications.

We look forward to receiving your contributions.

Prof. Dr. Min Li
Dr. Shuo Deng
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic materials
  • semiconductor
  • optoelectronic device
  • synthesis
  • characterization
  • modeling

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Published Papers (1 paper)

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Research

15 pages, 7746 KiB  
Article
Design of Gallium Nitride-Based Photodetector for Enhanced Accuracy in Solar Ultraviolet Index Monitoring
by Hanlin Li, Wenhao Li, Tianxiang Liu, Yiman Xu, Dongze He and Jun Wang
Photonics 2024, 11(9), 812; https://doi.org/10.3390/photonics11090812 - 29 Aug 2024
Viewed by 514
Abstract
Monitoring the solar ultraviolet index (UVI) is of great significance to protect human health. The monitoring of UVI faces several challenges: the accuracy is difficult to control, the complexity of the filter, the increase in volume and price, the decrease in response sensitivity, [...] Read more.
Monitoring the solar ultraviolet index (UVI) is of great significance to protect human health. The monitoring of UVI faces several challenges: the accuracy is difficult to control, the complexity of the filter, the increase in volume and price, the decrease in response sensitivity, and the low accuracy of measurement. Considering the limitations and insufficiencies in the current technology, this paper proposes a miniature gallium nitride (GaN)-based erythema response detector. The detector utilizes a double-diode integrated chip for accurate detection of the erythema response, enabling it to closely match the spectral response of the erythema spectrum curve determined by the World Health Organization. This ensures precise correspondence between the output current and ultraviolet index. The measurement error of each UV detector is determined by analyzing eight sets of UV radiation spectra. The experimental findings demonstrate that the proposed detector exhibits a measurement error below 0.4 for each group of UV index measurements. The experimental results show that the measurement accuracy of the detector on the ultraviolet index is at the advanced level compared to the current mainstream commercial ultraviolet detector. Full article
(This article belongs to the Special Issue New Advances in Semiconductor Optoelectronic Materials and Devices)
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