Optoelectronic Devices Technologies and Applications

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (1 May 2024) | Viewed by 1428

Special Issue Editors


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Guest Editor
1. College of Electronic and Information, Southwest Minzu University, Chengdu, Sichuan 610225, China
2. Key Laboratory of Electronic and Information Engineering, State Ethnic Affairs Commission, Chengdu 610041, China
Interests: optoelectronic devices; metamaterials and metasurfaces; computational electromagnetism; propagation characteristics of electromagnetic waves; microwave, millimeter wave and terahertz technologies, devices and applications

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Guest Editor
School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
Interests: quantum precision measurements with trapped ions, cold atoms, and electrons on liquid helium

Special Issue Information

Dear Colleagues,

Optoelectronic technology is a high-tech field integrating optical, electrical, mechanical and computing aspects, and its application range is very wide, including communication, medical, military, meteorological, display, storage and imaging. The photoelectric effect, optical waveguide, and quantum effect are the foundation and core of optoelectronic technology research. With the rapid development of science and technology, optoelectronic devices are constantly being updated and improved, and its application field has also been expanded, playing an important role in smart cities, smart homes and other fields, thus becoming an important support to promote the development of various industries. Optoelectronic device materials, photoelectric detection, integrated optical communication devices, fiber amplifier and laser devices are developing rapidly; with the continuous development and innovation of artificial intelligence technology, optoelectronic technology will be increasingly combined with this field so that optoelectronic technology can be made more intelligent, automated and networked, and better serve human beings. Only continuous technological innovation, unremitting efforts in basic research, and deep integration with various industries can promote the rapid development of optoelectronic technology. This Special Issue aims to invite researchers in relevant fields to contribute their original research and expand the knowledge in this field.

Authors are invited to submit manuscripts within the scope of is Special Issue on topics including, but not limited to, the following:

  • Lasers, amplifiers, micro/nano-photonic devices;
  • Solid-state, liquid, and gas lasers, technology, and devices;
  • Fiber lasers, pulsed amplification, ultrawideband, mode-locked, nonlinear effects;
  • High-energy/average power lasers;
  • Microfabricated devices, on-chip applications;
  • Nonlinear effects in micro and nanodevices;
  • Laser processing of materials;
  • Femtosecond laser processing;
  • Laser micro-and nano processing;
  • Laser nanopatterning;
  • Laser synthesis of nanomaterials;
  • Laser direct write;
  • Laser-assisted fabrication of novel onto-electronic devices;
  • Computational optics and computational electromagnetism;
  • Metamaterials, metasurfaces and their applications;
  • Electromagnetic wave propagation;
  • Microwave, millimeter wave and terahertz technologies, devices and applications;
  • New energy measurement and control;
  • Uav communication and path planning and other related applications;
  • Optoelectronic functional materials and applications;
  • Terahertz technologies and applications;
  • Ultrafast time–domain systems;
  • Direct generation using terahertz lasers;
  • Cw generation based on nonlinear optical mixing;
  • New terahertz measurement techniques and instrumentation;
  • Advances in imaging configurations, detector technologies, and terahertz optical components;
  • Terahertz optical measurements;
  • Applications using terahertz radiation for spectroscopy, sensing, and imaging;
  • Ultrafast optics, optoelectronic devices, and applications;
  • Optical phase control in ultrafast laser systems;
  • Ultra-fast optoelectronic and electro-optic materials, devices, and systems;
  • Ultra-fast measurement techniques;
  • Applications of ultrafast technology;
  • Ultrafast amplification and schemes;
  • Short-pulse, solid-state, semiconductor, fiber, waveguide optical sources and devices;
  • Fiber-optic sensors and networks;
  • White LED and related technologies;
  • Electro-optic modulators and related advanced modulation format technologies;
  • Advanced radio-over-fiber devices and related technologies;
  • Intelligent optoelectronic devices and optical switching;
  • Grating-based devices and related technologies;
  • Slow and fast light devices and related technologies;
  • Free-space communication-related devices and technologies;
  • Systems or devices for optical and digital image processing;
  • Biophotonics and optofluidics;
  • Laser medical diagnostics and therapeutics;
  • Biosensing including spectroscopic optical diagnostics;
  • Optical coherence tomography;
  • Photoacoustic techniques;
  • Optics in biotechnology;
  • Lab-on-chip devices;
  • Micro fluidically tunable or reconfigurable optical and photonic systems;
  • Optofluidic assembly and lithographic techniques;
  • Active optical sensing and metrology;
  • New optical devices, instruments, and technologies for precision measurements;
  • Optical frequency standards, length, distance, and dimensional metrology; 
  • Lasers, supercontinua, and broadband sources;
  • Frequency-comb generation, control, and applications;
  • Carrier envelope phase control;
  • Chemical and biological agent detection and identification;
  • Atmospheric monitoring, indoor, outdoor, industrial, combustion, emissions;
  • Laser spectroscopy for breath analysis.

Prof. Dr. Tao Tang
Dr. Miao Zhang
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

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Research

19 pages, 3912 KiB  
Article
Modification of Thermal Network Parameters for Aerial Cameras via Integrated Monte-Carlo and Least-Squares Methods
by Yue Fan, Wei Feng, Zhenxing Ren, Bingqi Liu and Dazhi Wang
Photonics 2024, 11(7), 641; https://doi.org/10.3390/photonics11070641 - 4 Jul 2024
Viewed by 376
Abstract
The precise thermal control of aerial cameras is crucial for the acquisition of high-resolution imagery, and an accurate temperature prediction is essential to achieve this. This paper presents a methodology for modifying thermal network models to improve the accuracy of temperature prediction for [...] Read more.
The precise thermal control of aerial cameras is crucial for the acquisition of high-resolution imagery, and an accurate temperature prediction is essential to achieve this. This paper presents a methodology for modifying thermal network models to improve the accuracy of temperature prediction for aerial cameras. Seven types of thermal parameters are extracted from the thermal network model, and a thermally sensitive analysis identifies eleven key parameters to streamline the processing time. Departing from traditional methods that rely on steady-state data, this study conducts transient thermal tests and leverages polynomial fitting to facilitate thorough parameter modification. To ensure data reliability, the Monte-Carlo algorithm is employed to explore the parameter spaces of key parameters, analyzing temperature errors. Subsequently, the Least-Squares method is utilized to obtain optimal estimates of the key parameter values. As a result, the updated model demonstrates significantly improved accuracy in temperature predictions, achieving a reduction in the maximum absolute error between the predicted and experimental results from 22 °C to 4 °C, and a lowering of the relative error from 33.8% to 6.1%. The proposed modification method validates its effectiveness in modeling and enhancing the precision of thermal network models for aerial cameras. Full article
(This article belongs to the Special Issue Optoelectronic Devices Technologies and Applications)
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13 pages, 5406 KiB  
Article
Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices
by Seung-man Park and Christoph H. Grein
Photonics 2024, 11(6), 531; https://doi.org/10.3390/photonics11060531 - 3 Jun 2024
Viewed by 399
Abstract
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the [...] Read more.
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors. Full article
(This article belongs to the Special Issue Optoelectronic Devices Technologies and Applications)
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