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Polymer-Based Nano-Electronics

A special issue of Polymers (ISSN 2073-4360). This special issue belongs to the section "Polymer Applications".

Deadline for manuscript submissions: closed (15 March 2022) | Viewed by 3055

Special Issue Editor


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Guest Editor
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
Interests: organic electronics (OPV, OPD, and Perovskite); device physics; nanomaterials (synthesis and characterization); nanomorphology control; nanopatterning; oxide materials; stamping-transfer nanotechnology
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Special Issue Information

Dear Colleagues,

Today, the world is experiencing serious energy problems due to various technological developments and large energy consumption. In order to meet the exponential growth in energy demand, new energy systems must be developed to replace fossil fuels in order to limit CO2 emissions and ensure a sustainable future environment. Solar cells have been studied for a long time as a next-generation energy system, owing to their promise as an environmentally friendly and infinite energy source.

Organic/inorganic and hybrid semiconductor-based electronic devices (e.g., photovoltaic cells, photodetectors, thin film transistors, and light-emitting diodes) have the potential to provide a solution to the present energy issues and to fulfil our future needs through the fabrication of panels via low-cost casting techniques that possess a large surface area and are lightweight and flexible.

In order to improve the performance of polymer-based nano electronics, many strategies have been introduced, such as: 1) synthesizing electron donor and acceptor materials with a wide absorption range; 2) producing a higher charge carrier mobility (electrical parameters); 3) controlling the nano-morphology; 4) developing efficient buffer layers; 5) creating flexible conductive electrodes; 6) designing new device structures; and 7) developing cost-effective nano imprint/transfer processes, etc.

The primary aim of this Special Issue is to highlight the progress and phenomena related to polymer engineering for efficient electronic devices, such as organic and perovskite photovoltaic cells, photodetectors, thin-film transistors, and light-emitting diodes, etc. Moreover, we aim to showcase polymer science that involves next-generation process development and material development in order to promote industrialization. We look forward to receiving a contribution from you that describes your recent research.

Prof. Dr. Dong Hwan Wang
Guest Editor

Manuscript Submission Information

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Keywords

  • polymer & hybrid solar cells
  • perovskite materials & devices
  • organic nanomaterials
  • polymer nanotechnology
  • next-generation electronics

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Published Papers (1 paper)

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Research

14 pages, 3370 KiB  
Article
Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator
by Ching-Lin Fan, Hou-Yen Tsao, Yu-Shien Shiah, Che-Wei Yao and Po-Wei Cheng
Polymers 2021, 13(22), 3941; https://doi.org/10.3390/polym13223941 - 15 Nov 2021
Cited by 5 | Viewed by 2488
Abstract
In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was [...] Read more.
In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm2/(Vs), 7 times higher than that of the control sample. Full article
(This article belongs to the Special Issue Polymer-Based Nano-Electronics)
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