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Quantum Beam and Its Applications for Quantum Technologies
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Quantum Beam and Its Applications for Quantum Technologies

A special issue of Quantum Beam Science (ISSN 2412-382X). This special issue belongs to the section "Engineering and Structural Materials".

Deadline for manuscript submissions: 31 July 2025 | Viewed by 15659

Special Issue Editor

Dr. Takeshi Ohshima

E-Mail Website
Guest Editor
Department of Advanced Functional Materials Research, Quantum Beam Science Research Directorate, Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki-machi, Takasaki 370-1292, Gunma, Japan
Interests: radiation effects on semiconductor materials and devices; functionalization/defect engineering of wide bandgap semiconductors by irradiation

Special Issue Information

Dear Colleagues,

The first quantum revolution created electronics based on semiconductors, optical engineering, and information and communication technologies. As a result, our daily life has dramatically changed. Quantum beam is used as an indispensable technology (ion beams for doping, electron beams for carrier lifetime controlling, etc.) for the first quantum revolution. However, we are facing issues which are difficult to solve using current technologies. Quantum technologies such as quantum computing, quantum cryptography, and quantum sensing are rapidly developed, and a new era of quantum technologies, so-called “Second quantum revolution”, is coming now. Quantum beam technologies have enough potential to be one of the key technologies to accelerate the second quantum revolution. To do so, we need to improve/sophisticate current technologies and demonstrate advanced quantum beam. The scope of this Special Issue incorporates a wide range of topics on quantum beam and its applications for quantum technologies, including but not limited to the following:

-    Quantum beam for quantum technologies, including ion source, accelerator, and irradiation techniques;

-    Creation of qubit/quantum sensing probe by quantum beam, including irradiation techniques and exploration of new qubits;

-    Functionalization of materials using quantum beams toward quantum technologies;

-    Applications such as quantum computing and quantum sensing using qubits/quantum sensors created by quantum beam;

-   Related technologies including laser techniques to improve current quantum beam technologies.

Dr. Takeshi Ohshima
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Quantum Beam Science is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

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Research

17 pages, 6476 KiB  
Article
Magnetic Heating Effect for Quarter-Wave Resonator (QWR) Superconducting Cavities
by Heetae Kim, Sungmin Jeon, Yoochul Jung and Juwan Kim
Quantum Beam Sci. 2023, 7(3), 21; https://doi.org/10.3390/qubs7030021 - 3 Jul 2023
Cited by 5 | Viewed by 1728
Abstract
In this paper, the magnetic heating effect of the superconducting quarter-wave resonator (QWR) cavities is investigated, and the Q slopes of the superconducting cavities are measured with an increasing accelerating field. Bardeen–Cooper–Schrieffer (BCS) resistance is calculated for the zero-temperature limit. The vertical test [...] Read more.
In this paper, the magnetic heating effect of the superconducting quarter-wave resonator (QWR) cavities is investigated, and the Q slopes of the superconducting cavities are measured with an increasing accelerating field. Bardeen–Cooper–Schrieffer (BCS) resistance is calculated for the zero-temperature limit. The vertical test is shown for the performance test of the QWR cavities. The parameters for the QWR cavity are presented. The Q slopes are measured as a function of an accelerating electric field at 4.2 K. The surface resistance of the superconducting cavity increases with an increasing peak magnetic field. The magnetic defects degrade the quality factor. From the magnetic degradation, we determine the magnetic moments of the superconducting cavities. All quarter-wave resonator (QWR) cryomodules are installed in the tunnel, and beam commissioning is performed successfully. Full article
(This article belongs to the Special Issue Quantum Beam and Its Applications for Quantum Technologies)
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9 pages, 889 KiB  
Article
Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams
by Thomas Schenkel, Walid Redjem, Arun Persaud, Wei Liu, Peter A. Seidl, Ariel J. Amsellem, Boubacar Kanté and Qing Ji
Quantum Beam Sci. 2022, 6(1), 13; https://doi.org/10.3390/qubs6010013 - 16 Mar 2022
Cited by 6 | Viewed by 4313
Abstract
Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in materials. We report [...] Read more.
Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in materials. We report results from color center formation in silicon with pulses of 900 keV protons. G-centers in silicon are near-infrared photon emitters with emerging applications as single-photon sources and for spin-photon qubit integration. G-centers consist of a pair of substitutional carbon atoms and one silicon interstitial atom and are often formed by carbon ion implantation and thermal annealing. Here, we report on G-center formation with proton pulses in silicon samples that already contained carbon, without carbon ion implantation or thermal annealing. The number of G-centers formed per proton increased when we increased the pulse intensity from 6.9 × 109 to 7.9 × 1010 protons/cm2/pulse, demonstrating a flux effect on G-center formation efficiency. We observe a G-center ensemble linewidth of 0.1 nm (full width half maximum), narrower than previously reported. Pulsed ion beams can extend the parameter range available for fundamental studies of radiation-induced defects and the formation of color centers for spin-photon qubit applications. Full article
(This article belongs to the Special Issue Quantum Beam and Its Applications for Quantum Technologies)
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10 pages, 2104 KiB  
Article
Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation
by Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Yuta Masuyama, Hiroshi Abe and Takeshi Ohshima
Quantum Beam Sci. 2022, 6(1), 2; https://doi.org/10.3390/qubs6010002 - 30 Dec 2021
Cited by 8 | Viewed by 7814
Abstract
Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− [...] Read more.
Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%. Full article
(This article belongs to the Special Issue Quantum Beam and Its Applications for Quantum Technologies)
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