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Semiconductor Materials and Nanostructures for Sensors and Devices

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A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Sensor Materials".

Deadline for manuscript submissions: closed (25 January 2022) | Viewed by 9757

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Special Issue Editors

Dr. Juan Pereiro Viterbo

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Guest Editor

School of Physics and Astronomy, Cardiff University, The Parade, CF243AA, Cardiff, Wales, UK
Interests: III-V semiconductors and nanostructures; integration of dissimilar materials; metal-semiconductor interfaces; magnetic materials (magnetic semiconductors in particular); 2D materials epitaxial growth and properties; heterostructures that enable interface superconductivity

Prof. Dr. Javier Grandal

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Instituto de Sistemas Optoelectronicos y Microtecnologia de UPM, Madrid, Spain
Interests: EELS; STEM; nitrides; nanostructures; magnetic materials

Dr. Carlos Garcia Nunez

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Guest Editor

Scottish Universities Physics Alliance (SUPA), Institute of Thin Films, Sensors & Imaging (TFSI), University of the West of Scotland (UWS), Paisley PA1 2BE, UK
Interests: advanced materials and nanotechnology; thin-film technology; plasma physics; epitaxial growth; gravitational wave detection; low-mechanical-loss coatings; flexible/wearable electronics; energy-autonomous systems
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductors are ubiquitous across our lives. They constitute the basis of our current electronics and communications. Our increased ability to fabricate nanostructures has changed the field in recent years. Nanostructures enable access to new physical mechanisms facilitating the development of new functionalities. The aim of this Special Issue is to present the multidisciplinary efforts to integrate sensors that provide the information to keep enhancing our quality of life—for example, making our life safer and more secure, improving our healthcare, or providing new ways to obtain clean energy

Dr. Juan Pereiro Viterbo
Prof. Dr. Javier Grandal
Dr. Carlos Garcia Nunez
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

multidisciplinary
semiconductors
nanostructures
quantum dots
nanowires
compound semiconductors
monolayers
sensors
quantum wells

Published Papers (3 papers)

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Research

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13 pages, 1343 KiB

Open AccessArticle

Area-Efficient Post-Processing Circuits for Physically Unclonable Function with 2-Mpixel CMOS Image Sensor

by Shunsuke Okura, Masanori Aoki, Tatsuya Oyama, Masayoshi Shirahata, Takeshi Fujino, Kenichiro Ishikawa and Isao Takayanagi

Sensors 2021, 21(18), 6079; https://doi.org/10.3390/s21186079 - 10 Sep 2021

Cited by 1 | Viewed by 1699

Abstract

In order to realize image information security starting from the data source, challenge–response (CR) device authentication, based on a Physically Unclonable Function (PUF) with a 2 Mpixel CMOS image sensor (CIS), is studied, in which variation of the transistor in the pixel array is utilized. As each CR pair can be used only once to make the CIS PUF resistant to the modeling attack, CR authentication with CIS can be carried out 4050 times, with basic post-processing to generate the PUF ID. If a larger number of authentications is required, advanced post-processing using Lehmer encoding can be utilized to carry out authentication

14, 858

times. According to the PUF performance evaluation, the authentication error rate is less than

0.001

ppm. Furthermore, the area overhead of the CIS chip for the basic and advanced post-processing is only

1 %

and

2 %

, respectively, based on a Verilog HDL model circuit design. Full article

(This article belongs to the Special Issue Semiconductor Materials and Nanostructures for Sensors and Devices)

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Figure 1

12 pages, 31449 KiB

Open AccessArticle

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

by Sebastian Złotnik, Jarosław Wróbel, Jacek Boguski, Małgorzata Nyga, Marek Andrzej Kojdecki and Jerzy Wróbel

Sensors 2021, 21(16), 5272; https://doi.org/10.3390/s21165272 - 4 Aug 2021

Cited by 3 | Viewed by 1970

Abstract

Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K. Full article

(This article belongs to the Special Issue Semiconductor Materials and Nanostructures for Sensors and Devices)

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Review

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17 pages, 4184 KiB

Open AccessEditor’s ChoiceReview

Recent Advances in ZnO-Based Carbon Monoxide Sensors: Role of Doping

by Ana María Pineda-Reyes, María R. Herrera-Rivera, Hugo Rojas-Chávez, Heriberto Cruz-Martínez and Dora I. Medina

Sensors 2021, 21(13), 4425; https://doi.org/10.3390/s21134425 - 28 Jun 2021

Cited by 38 | Viewed by 4993

Abstract

Monitoring and detecting carbon monoxide (CO) are critical because this gas is toxic and harmful to the ecosystem. In this respect, designing high-performance gas sensors for CO detection is necessary. Zinc oxide-based materials are promising for use as CO sensors, owing to their good sensing response, electrical performance, cost-effectiveness, long-term stability, low power consumption, ease of manufacturing, chemical stability, and non-toxicity. Nevertheless, further progress in gas sensing requires improving the selectivity and sensitivity, and lowering the operating temperature. Recently, different strategies have been implemented to improve the sensitivity and selectivity of ZnO to CO, highlighting the doping of ZnO. Many studies concluded that doped ZnO demonstrates better sensing properties than those of undoped ZnO in detecting CO. Therefore, in this review, we analyze and discuss, in detail, the recent advances in doped ZnO for CO sensing applications. First, experimental studies on ZnO doped with transition metals, boron group elements, and alkaline earth metals as CO sensors are comprehensively reviewed. We then focused on analyzing theoretical and combined experimental–theoretical studies. Finally, we present the conclusions and some perspectives for future investigations in the context of advancements in CO sensing using doped ZnO, which include room-temperature gas sensing. Full article

(This article belongs to the Special Issue Semiconductor Materials and Nanostructures for Sensors and Devices)

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