Topological Quantum Materials and Applications

A special issue of Symmetry (ISSN 2073-8994). This special issue belongs to the section "Physics".

Deadline for manuscript submissions: closed (30 April 2024) | Viewed by 6304

Special Issue Editors


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Guest Editor
Materials Genome Institute, Shanghai University, Shanghai 200444, China
Interests: topological quantum physics and materials; antiferromagnetic materials; ferromagnetism; 2D quantum materials; quantum phenomena in advanced energy materials; superconductivity and superconducting materials; spintronic devices

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Guest Editor
Department of Physics, Shanghai University, Shanghai 200444, China
Interests: solid state physics; photoelectron spectroscopy; low-dimensional systems; low-dimensional magnetism; graphene-based systems; transition metal di- and tri-chalcogenides

Special Issue Information

Dear Colleagues,

Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science.

Topological quantum materials are a class of compounds featuring electronic band structures, which are topologically distinct from common metals and insulators. These materials have emerged as exceptionally fertile ground for materials science research. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin–orbit coupling.

This Special Issue of Symmetry aims to cover recent developments in these areas including, but not limited to:

  • design and synthesis of topological quantum materials;
  • the magnetic, transport, thermal properties of topological quantum materials and applications;
  • works related to quantum theory.

The format of welcomed articles includes full papers, communications, and reviews. Moreover, contributions should fall within the scope of the journal Symmetry.

Prof. Dr. Guixin Cao
Prof. Dr. Yuriy Dedkov
Guest Editors

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Keywords

  • topological quantum physics and materials
  • antiferromagnetic materials
  • ferromagnetism
  • 2D quantum materials
  • quantum phenomena in advanced energy materials
  • superconductivity and superconducting materials
  • spintronic devices

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Published Papers (3 papers)

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Research

11 pages, 2743 KiB  
Article
Magnetic Field-Induced Resistivity Upturn and Non-Topological Origin in the Quasi-One-Dimensional Semimetals
by Yalei Huang, Rongli Ye, Weihao Shen, Xinyu Yao and Guixin Cao
Symmetry 2023, 15(10), 1882; https://doi.org/10.3390/sym15101882 - 7 Oct 2023
Viewed by 1556
Abstract
As a layered topological nodal line semimetals hosting a quasi-one-dimensional (quasi-1D) crystalline structure, TaNiTe5 has attracted intensive attention. In this research, we analyze the low temperature (low-T) transport properties in single crystals of TaNiTe5. The high anisotropic transport [...] Read more.
As a layered topological nodal line semimetals hosting a quasi-one-dimensional (quasi-1D) crystalline structure, TaNiTe5 has attracted intensive attention. In this research, we analyze the low temperature (low-T) transport properties in single crystals of TaNiTe5. The high anisotropic transport behaviors confirm the anisotropic electronic structure in quasi-1D TaNiTe5. The resistivity shows a magnetic field-induced resistivity upturn followed by a plateau at low temperatures when current is parallel to the c axis and magnetic field is parallel to the b axis. An extremely large magnetoresistance of 1000% has been observed at 2 K and 13 T. Such a magnetic field-induced phenomenon can be generally explained using the topological theory, but we find that the behaviors are well accounted with the classical Kohler’s rule. The analysis of the Hall resistivity points to carrier compensation in TaNiTe5, fully justifying Kohler’s rule. Our findings imply that analogous magnetic field-induced low-T properties in nodal line semimetals TaNiTe5 can be understood in the framework of classical magnetoresistance theories that do not require to invoke the topological surface states. Full article
(This article belongs to the Special Issue Topological Quantum Materials and Applications)
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21 pages, 2744 KiB  
Article
Non-Trivial Band Topology Criteria for Magneto-Spin–Orbit Graphene
by Alexander V. Eryzhenkov, Artem V. Tarasov, Alexander M. Shikin and Artem G. Rybkin
Symmetry 2023, 15(2), 516; https://doi.org/10.3390/sym15020516 - 15 Feb 2023
Cited by 4 | Viewed by 1925
Abstract
Band structure and topology of magneto-spin–orbit graphene is investigated using the proposed tight-binding model that incorporates both Rashba and sublattice-resolved collinear exchange couplings in a generic ferrimagnetic (FIM) setting for in-plane and out-of-plane magnetization directions. The resulting band structures were analyzed for possibilities [...] Read more.
Band structure and topology of magneto-spin–orbit graphene is investigated using the proposed tight-binding model that incorporates both Rashba and sublattice-resolved collinear exchange couplings in a generic ferrimagnetic (FIM) setting for in-plane and out-of-plane magnetization directions. The resulting band structures were analyzed for possibilities to extract the strengths of exchange and Rashba couplings from experimental spin-resolved ARPES measurements of the valley gaps and π-state spin-splittings. It was shown that the topologically trivial in-plane FIM situation admits simple expressions for these quantities, whereas the out-of-plane FIM, which admits a nontrivial band topology, is harder to analyze. The obtained topological phase diagrams for the out-of-plane FIM case show that the anomalous Hall conductance is quite stable with respect to the antiferromagnetic (AFM) interaction, which tends to interfere with the QAHE phase; moreover, the topological phase transition has a rather smooth character with respect to the AFM coupling strength. Full article
(This article belongs to the Special Issue Topological Quantum Materials and Applications)
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11 pages, 1130 KiB  
Article
Topological Phase Transitions Driven by Sn Doping in (Mn1−xSnx)Bi2Te4
by Artem V. Tarasov, Tatiana P. Makarova, Dmitry A. Estyunin, Alexander V. Eryzhenkov, Ilya I. Klimovskikh, Vladimir A. Golyashov, Konstantin A. Kokh, Oleg E. Tereshchenko and Alexander M. Shikin
Symmetry 2023, 15(2), 469; https://doi.org/10.3390/sym15020469 - 10 Feb 2023
Cited by 8 | Viewed by 2118
Abstract
The antiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to the combination of the time-reversal and primitive-lattice translation symmetries, giving rise to its topologically nontrivial nature and a number of fundamental phenomena. At the same time, the possibility [...] Read more.
The antiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to the combination of the time-reversal and primitive-lattice translation symmetries, giving rise to its topologically nontrivial nature and a number of fundamental phenomena. At the same time, the possibility to control the electronic and magnetic properties of this system can provide new effective ways for its application in devices. One of the approaches to manipulate MnBi2Te4 properties is the partial substitution of magnetic atoms in the compound with atoms of non-magnetic elements, which inevitably affect the interplay of magnetism and band topology in the system. In this work, we have carried out theoretical modelling of changes in the electronic structure that occur as a result of increasing the concentration of Sn atoms at Mn positions in the (Mn1xSnx)Bi2Te4 compound both using Korringa–Kohn–Rostoker (KKR) Green’s function method as well as the widespread approach of using supercells with impurity in DFT methods. The calculated band structures were also compared with those experimentally measured by angle-resolved photoelectron spectroscopy (ARPES) for samples with x values of 0, 0.19, 0.36, 0.52 and 0.86. We assume that the complex hybridization of Te-pz and Bi-pz orbitals with Sn and Mn ones leads to a non-linear dependence of band gap on Sn content in Mn positions, which is characterized by a plateau with a zero energy gap at some concentration values, suggesting possible topological phase transitions in the system. Full article
(This article belongs to the Special Issue Topological Quantum Materials and Applications)
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