Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains
Abstract
:1. Introduction
2. Materials and Methods
2.1. Materials
2.2. Characterization
2.3. Monomer Synthesis
2.4. PAA Synthesis and PI Film Preparation
3. Results and Discussion
3.1. Monomer Synthesis
3.2. PAA Synthesis and Film Preparation
3.3. Thermal and Mechanical Properties
3.4. Atomic Oxygen Resistant Properties
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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PAA | [η]inh a (dL/g) | Mnb (×104 g/mol) | Mwb (×104 g/mol) | PDI b |
---|---|---|---|---|
PAA-0 | 1.33 | 10.70 | 17.11 | 1.59 |
PAA-10 | 1.28 | 9.87 | 15.88 | 1.61 |
PAA-15 | 1.20 | 9.61 | 16.29 | 1.69 |
PAA-20 | 1.13 | 9.57 | 15.60 | 1.63 |
PAA-25 | 1.04 | 8.56 | 14.34 | 1.68 |
PAA-30 | 0.93 | 7.43 | 13.63 | 1.83 |
PI | CIE Lab Parameters a | Thermal Properties b | Tensile Properties c | |||||||
---|---|---|---|---|---|---|---|---|---|---|
L* | a* | b* | haze (%) | T5% (oC) | Rw750 (%) | CTE (×10−6/K) | TS (MPa) | TM (GPa) | Eb (%) | |
PI-0 | 89.93 | −11.09 | 84.23 | 0.68 | 574 | 57.4 | 28.9 | 131.0 | 1.90 | 73.2 |
PI-10 | 87.76 | −7.48 | 85.41 | 4.78 | 534 | 59.1 | 45.6 | 111.7 | 1.87 | 29.4 |
PI-15 | 87.05 | −5.86 | 86.64 | 7.65 | 528 | 58.5 | 50.4 | 108.1 | 1.77 | 28.9 |
PI-20 | 85.84 | −4.87 | 89.46 | 9.55 | 524 | 59.6 | 56.1 | 97.6 | 1.69 | 28.0 |
PI-25 | 85.05 | −2.66 | 94.41 | 14.53 | 519 | 59.9 | 55.0 | 93.3 | 1.64 | 25.6 |
PI-30 | 81.79 | −0.49 | 96.42 | 31.70 | 512 | 59.3 | 54.6 | 75.0 | 1.55 | 16.1 |
Sample | W1a (mg) | W2a (mg) | ΔW a (mg) | Esb (10−25 cm3/atom) |
---|---|---|---|---|
PI-0 (Kapton) | 4535 | 900 | 3635 | 30.0 |
PI-10 | 2775 | 2460 | 315 | 2.6 |
PI-15 | 2225 | 1970 | 255 | 2.1 |
PI-20 | 2335 | 2130 | 205 | 1.7 |
PI-25 | 2670 | 2515 | 155 | 1.3 |
PI-30 | 2980 | 2845 | 135 | 1.1 |
Samples | Unexposed Samples | AO Exposed Samples | ||||||
---|---|---|---|---|---|---|---|---|
Si2p | C1s | O1s | N1s | Si2p | C1s | O1s | N1s | |
PI-10 | 3.92 | 67.92 | 21.07 | 6.86 | 24.27 | 12.04 | 53.52 | 0.41 |
PI-15 | 3.23 | 65.27 | 22.95 | 6.68 | 24.30 | 10.24 | 54.32 | 0.43 |
PI-20 | 3.63 | 59.95 | 25.55 | 4.25 | 24.50 | 8.86 | 54.76 | 0.35 |
PI-25 | 2.29 | 67.68 | 21.87 | 5.67 | 24.29 | 8.54 | 55.02 | 0.34 |
PI-30 | 3.08 | 64.63 | 23.63 | 6.14 | 23.42 | 9.51 | 53.71 | 0.31 |
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Wu, H.; Zhang, Y.; Guo, Y.-D.; Qi, H.-R.; An, Y.-C.; Jia, Y.-J.; Tan, Y.-Y.; Liu, J.-G.; Wu, B.-H. Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains. Polymers 2020, 12, 2865. https://doi.org/10.3390/polym12122865
Wu H, Zhang Y, Guo Y-D, Qi H-R, An Y-C, Jia Y-J, Tan Y-Y, Liu J-G, Wu B-H. Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains. Polymers. 2020; 12(12):2865. https://doi.org/10.3390/polym12122865
Chicago/Turabian StyleWu, Hao, Yan Zhang, Yi-Dan Guo, Hao-Ran Qi, Yuan-Cheng An, Yan-Jiang Jia, Yao-Yao Tan, Jin-Gang Liu, and Bo-Han Wu. 2020. "Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains" Polymers 12, no. 12: 2865. https://doi.org/10.3390/polym12122865