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Keywords = Polysilicon

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21 pages, 1697 KB  
Article
Coordinative Scheduling Method for Source–Load–Storage Integrated Systems Considering the Utilization of Energy-Intensive Industry Loads for Regulation
by Zhongzheng Li, Gaohang Zhang, Mengke Liao and Erbiao Zhou
Sustainability 2025, 17(16), 7321; https://doi.org/10.3390/su17167321 - 13 Aug 2025
Viewed by 552
Abstract
With the increasing penetration of renewable energy in power systems, it is vital to adopt methods to enhance the acceptance capacity of renewable energy. Energy-intensive loads have excellent potential for regulating the utilization of renewable energy. Existing studies have often overlooked the regulatory [...] Read more.
With the increasing penetration of renewable energy in power systems, it is vital to adopt methods to enhance the acceptance capacity of renewable energy. Energy-intensive loads have excellent potential for regulating the utilization of renewable energy. Existing studies have often overlooked the regulatory potential of energy-intensive industrial loads. The coordinated optimization of source, load, and storage can improve the matching degree between power supply and load demand and achieve on-site consumption of renewable energy. This paper proposes a coordinated optimization method for source–load–storage integrated systems, utilizing for regulation energy-intensive industrial loads such as electrolytic aluminum load and polysilicon load. The operational characteristics and regulatory ability of electrolytic aluminum load and polysilicon load were analyzed in the production process. Operation models of energy-intensive loads are proposed. A coordinated operation model of a source–load–storage integrated system is established. The operation schemes of thermal units, energy storage, and energy-intensive loads are jointly optimized to guarantee power supply capacity and renewable energy consumption. In addition, power purchase from the bulk power system and the time-of-use electricity price are considered to ensure a reliable power supply for energy-intensive loads. The case results showed that on the premise of ensuring that the production meets the requirements, the flexibility and economy of system operation were effectively improved. Reasonably rated power and capacity for the energy storage system can improve the regulation ability and reduce the operating costs of regional systems. Full article
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18 pages, 19901 KB  
Article
A Novel Polysilicon-Fill-Strengthened Etch-Through 3D Trench Electrode Detector: Fabrication Methods and Electrical Property Simulations
by Xuran Zhu, Zheng Li, Zhiyu Liu, Tao Long, Jun Zhao, Xinqing Li, Manwen Liu and Meishan Wang
Micromachines 2025, 16(8), 912; https://doi.org/10.3390/mi16080912 - 6 Aug 2025
Cited by 1 | Viewed by 587
Abstract
Three-dimensional trench electrode silicon detectors play an important role in particle physics research, nuclear radiation detection, and other fields. A novel polysilicon-fill-strengthened etch-through 3D trench electrode detector is proposed to address the shortcomings of traditional 3D trench electrode silicon detectors; for example, the [...] Read more.
Three-dimensional trench electrode silicon detectors play an important role in particle physics research, nuclear radiation detection, and other fields. A novel polysilicon-fill-strengthened etch-through 3D trench electrode detector is proposed to address the shortcomings of traditional 3D trench electrode silicon detectors; for example, the distribution of non-uniform electric fields, asymmetric electric potential, and dead zone. The physical properties of the detector have been extensively and systematically studied. This study simulated the electric field, potential, electron concentration distribution, complete depletion voltage, leakage current, capacitance, transient current induced by incident particles, and weighting field distribution of the detector. It also systematically studied and analyzed the electrical characteristics of the detector. Compared to traditional 3D trench electrode silicon detectors, this new detector adopts a manufacturing process of double-side etching technology and double-side filling technology, which results in a more sensitive detector volume and higher electric field uniformity. In addition, the size of the detector unit is 120 µm × 120 µm × 340 µm; the structure has a small fully depleted voltage, reaching a fully depleted state at around 1.4 V, with a saturation leakage current of approximately 4.8×1010A, and a geometric capacitance of about 99 fF. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Third Edition)
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10 pages, 3553 KB  
Article
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics
by Yanjuan Liu, Fangfei Bai and Junpeng Fang
Micromachines 2025, 16(8), 909; https://doi.org/10.3390/mi16080909 - 4 Aug 2025
Cited by 1 | Viewed by 566
Abstract
In this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC, silicon has a [...] Read more.
In this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC, silicon has a smaller band energy, which results in a lower built-in potential for the junction formed by P+ polysilicon and a 4N-SiC N-drift region. A trench P+ polysilicon is introduced in the source side, forming a heterojunction with the N-drift region, and this heterojunction is unipolar and connected in parallel with the body PiN diode. When the LDMOS operates as a freewheeling diode, the trench heterojunction conducts first, preventing the parasitic PiN from turning on and thereby significantly reducing the number of carriers in the N-drift region. Consequently, THD-LDMOS exhibits superior reverse recovery characteristics. The simulation results indicate that the reverse recovery peak current and reverse recovery charge of THD-LDMOS are reduced by 55.5% and 77.6%, respectively, while the other basic electrical characteristics remains unaffected. Full article
(This article belongs to the Special Issue Advanced Wide Bandgap Semiconductor Materials and Devices)
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14 pages, 2232 KB  
Article
Dual-Closed-Loop Control System for Polysilicon Reduction Furnace Power Supply Based on Hysteresis PID and Predictive Control
by Shihao Li, Tiejun Zeng, Shan Jian, Guiping Cui, Ziwen Che, Genghong Lin and Zeyu Yan
Energies 2025, 18(14), 3707; https://doi.org/10.3390/en18143707 - 14 Jul 2025
Viewed by 352
Abstract
In the power system of a polysilicon reduction furnace, especially during the silicon rod growth process, the issue of insufficient temperature control accuracy arises due to the system’s nonlinear and time-varying characteristics. To address this challenge, a dual-loop control system is proposed, combining [...] Read more.
In the power system of a polysilicon reduction furnace, especially during the silicon rod growth process, the issue of insufficient temperature control accuracy arises due to the system’s nonlinear and time-varying characteristics. To address this challenge, a dual-loop control system is proposed, combining model-free adaptive control (MFAC) with an improved PID controller. The inner loop utilizes a hysteresis PID controller for dynamic current regulation, ensuring fast and accurate current adjustments. Meanwhile, the outer loop employs a hybrid MFAC-based improved PID algorithm to optimize the temperature tracking performance, achieving precise temperature control even in the presence of system uncertainties. The MFAC component is adaptive and does not require a system model, while the improved PID enhances stability and reduces the response time. Simulation results demonstrate that this hybrid control strategy significantly improves the system’s performance, achieving faster response times, smaller steady-state errors, and notable improvements in the uniformity of polysilicon deposition, which is critical for high-quality silicon rod growth. The proposed system enhances both efficiency and accuracy in industrial applications. Furthermore, applying the dual-loop model to actual industrial products further validated its effectiveness. The experimental results show that the dual-loop model closely approximates the polysilicon production model, confirming that dual-loop control can allow the system to rapidly and accurately reach the set values. Full article
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18 pages, 2887 KB  
Article
Polymer-Based Chemicapacitive Hybrid Sensor Array for Improved Selectivity in e-Nose Systems
by Pavithra Munirathinam, Mohd Farhan Arshi, Haleh Nazemi, Gian Carlo Antony Raj and Arezoo Emadi
Sensors 2025, 25(13), 4130; https://doi.org/10.3390/s25134130 - 2 Jul 2025
Viewed by 3116
Abstract
Detecting volatile organic compounds (VOCs) is essential for health, environmental protection, and industrial safety. VOCs contribute to air pollution, pose health risks, and can indicate leaks or contamination in industries. Applications include air quality monitoring, disease diagnosis, and food safety. This paper focuses [...] Read more.
Detecting volatile organic compounds (VOCs) is essential for health, environmental protection, and industrial safety. VOCs contribute to air pollution, pose health risks, and can indicate leaks or contamination in industries. Applications include air quality monitoring, disease diagnosis, and food safety. This paper focuses on polymer-based hybrid sensor arrays (HSAs) utilizing interdigitated electrode (IDE) geometries for VOC detection. Achieving high selectivity and sensitivity in gas sensing remains a challenge, particularly in complex environments. To address this, we propose HSAs as an innovative solution to enhance sensor performance. IDE-based sensors are designed and fabricated using the Polysilicon Multi-User MEMS process (PolyMUMPs). Experimental evaluations are performed by exposing sensors to VOCs under controlled conditions. Traditional multi-sensor arrays (MSAs) achieve 82% prediction accuracy, while virtual sensor arrays (VSAs) leveraging frequency dependence improve performance: PMMA-VSA and PVP-VSA predict compounds with 100% and 98% accuracy, respectively. The proposed HSA, integrating these VSAs, consistently achieves 100% accuracy in compound identification and concentration estimation, surpassing MSA and VSA performance. These findings demonstrate that proposed polymer-based HSAs and VSAs, particularly with advanced IDE geometries, significantly enhance selectivity and sensitivity, advancing e-Nose technology for more accurate and reliable VOC detection across diverse applications. Full article
(This article belongs to the Special Issue Advanced Sensors for Gas Monitoring)
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8 pages, 2145 KB  
Proceeding Paper
Tunnel Oxide Passivated Contact and Passivated Emitter Rear Cell Solar Module Testing
by Tzong-Jiy Tsai, Jun-You Lu and Ming-Hung Lin
Eng. Proc. 2025, 92(1), 90; https://doi.org/10.3390/engproc2025092090 - 3 Jun 2025
Viewed by 753
Abstract
The tunnel oxide passivated contact (TOPCon) solar cell utilizes an ultra-thin tunnel oxide layer in its passivation layer structure. The performance difference between TOPCon and passivated emitter and rear cell (PERC) solar cells is obvious due to differences in their structure and operational [...] Read more.
The tunnel oxide passivated contact (TOPCon) solar cell utilizes an ultra-thin tunnel oxide layer in its passivation layer structure. The performance difference between TOPCon and passivated emitter and rear cell (PERC) solar cells is obvious due to differences in their structure and operational characteristics. Compared with PERC, TOPCon involves additional processes such as boron diffusion, tunnel oxide deposition, polysilicon doping, and cleaning, while eliminating the need for laser grooving. PERC production lines can be converted to TOPCon production lines which reduces equipment investment costs. Therefore, it is beneficial to replace PERC products in the future. On two different manufacturing technologies for TOPCon and PERC solar modules, we conducted electroluminescence (EL) tests to analyze power degradation in the solar modules. Full article
(This article belongs to the Proceedings of 2024 IEEE 6th Eurasia Conference on IoT, Communication and Engineering)
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13 pages, 2871 KB  
Article
Integrated Microcantilever for Joint Thermal Analysis of Trace Hazardous Materials
by Yuhang Yang, Xinyu Li, Zechun Li, Ming Li, Ying Chen, Shaokui Tan, Haitao Yu, Pengcheng Xu and Xinxin Li
Sensors 2025, 25(10), 3004; https://doi.org/10.3390/s25103004 - 9 May 2025
Cited by 2 | Viewed by 2767
Abstract
During the thermal analysis of hazardous materials, the thermal instruments available may face the risk of contamination within heating chambers or damage to the instruments themselves. Herein, this work introduces an innovative detection technology that combines thermogravimetric and differential thermal analysis with an [...] Read more.
During the thermal analysis of hazardous materials, the thermal instruments available may face the risk of contamination within heating chambers or damage to the instruments themselves. Herein, this work introduces an innovative detection technology that combines thermogravimetric and differential thermal analysis with an integrated MEMS cantilever. Integrating polysilicon thermocouples and a heat-driven resistor into a single resonant cantilever achieves remarkable precision with a mass resolution of 5.5 picograms and a temperature resolution of 0.0082 °C. Validated through the thermal analysis of nylon 6, the cantilever excels in detecting nanogram-level samples, making it ideal for analyzing hazardous materials like ammonium perchlorate and TNT. Notably, it has successfully observed the evaporation of TNT in an air atmosphere. The integrated MEMS cantilever detection chip offers a groundbreaking micro-quantification solution for hazardous material analysis, significantly enhancing safety and opening new avenues for application. Full article
(This article belongs to the Special Issue Chip-Based MEMS Platforms)
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12 pages, 1900 KB  
Article
The Effect of Area Density of Polysilicon Thermocouples on Thermoelectric Performance
by Shih-Ming Yang, Zen-Wen Lai and Ai-Lin Liu
Sensors 2025, 25(4), 1098; https://doi.org/10.3390/s25041098 - 12 Feb 2025
Viewed by 736
Abstract
Thermoelectric energy generators (TEGs) that can convert body heat into electricity are considered most promising to drive wearable devices. Many TEG designs with a polysilicon thermocouple have been proposed for implementation in high-yield semi-conductor foundry services. This study shows that the area density, [...] Read more.
Thermoelectric energy generators (TEGs) that can convert body heat into electricity are considered most promising to drive wearable devices. Many TEG designs with a polysilicon thermocouple have been proposed for implementation in high-yield semi-conductor foundry services. This study shows that the area density, defined by the number of thermocouples per mm2, is a better index than the fill factor in evaluating TEG performance. The effects of thermocouple length, width, and spacing (between the adjacent thermocouples) on area density, and hence on TEG performance, are analyzed. For a TEG with 33 × 1 μm (length × width) co-planar thermocouples (P- and N-thermoleg side by side) and 1 μm spacing between two adjacent thermocouples, the area density is 4902 thermocouples per mm2 and it can deliver a 0.110 μW/cm2K2 power factor and a 12.906 V/cm2K voltage factor. The performance can be improved further by 57 × 1 μm stacked thermocouples (P-thermoleg above N-thermoleg) with a higher area density 8621 to achieve results of 0.110 μW/cm2K2 and 22.638 V/cm2K. Such a high area density not only increases TEG performance, but also improves the DC–DC converter efficiency. A 5 × 5 mm2 TEG chip with co-planar or stacked thermocouples is shown to deliver above 3 μW and over 3 V when operating at a 10 °C temperature difference. Full article
(This article belongs to the Special Issue Advances in Energy Harvesting and Sensor Systems)
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27 pages, 6373 KB  
Article
Market Potential Evaluation of Photovoltaic Technologies in the Context of Future Architectural Trends
by Jianguo Di, Wenge Liu, Jiaqi Sun and Dianfeng Zhang
Sustainability 2025, 17(3), 1060; https://doi.org/10.3390/su17031060 - 28 Jan 2025
Viewed by 1228
Abstract
In order to elucidate the market potential and competition strategies of various photovoltaic (PV) technologies in the context of future architectural trends, taking into account the aesthetic impact and evolving architectural styles, a suite of market assessment methodologies was proposed and applied to [...] Read more.
In order to elucidate the market potential and competition strategies of various photovoltaic (PV) technologies in the context of future architectural trends, taking into account the aesthetic impact and evolving architectural styles, a suite of market assessment methodologies was proposed and applied to systematically evaluate five commercially available PV technologies. Three methodologies were employed or introduced: a comprehensive weighting approach that integrates the TOPSIS entropy weight method with user weight surveys, cumulative prospect theory (CPT), and a market integration method. The survey revealed that price emerged as the paramount factor distinguishing technologies, with a score of 4.8766, closely followed by conversion rates, at 4.8326. Aesthetics was deemed 3% more significant than government subsidies to consumers, scoring 4.4414. During the evaluation, technical indicators were translated into professional financial metrics. The results indicated that crystalline silicon PV technologies hold market advantages in both traditional and transparent applications. Monocrystalline silicon exhibited the highest utility in traditional settings, with a value of −0.0766, whereas polysilicon topped the charts in transparent applications, scoring −0.0676. However, when aesthetics was fully factored in, thin-film technologies began to outperform crystalline silicon, initially in transparent settings and subsequently in traditional ones. When both scenarios were merged, the market share of thin-film PVs increased with a rise in transparent applications, while that of crystalline silicon PVs decreased. Sensitivity and comparative analyses yielded diverse outcomes, validating the robustness of the findings. Further research unveiled that, beyond utility and cost, competition and technological factors also influence market shares, particularly when contemplating future shifts in architectural styles and innovations in product aesthetics. Considering the above, crystalline silicon PV can dominate the PVs in the building market due to their advantages of cost and efficiency, and thin-film PVs can increase their own market share with their aesthetic advantages in the future. Full article
(This article belongs to the Section Green Building)
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17 pages, 4060 KB  
Article
An Assessment of Local Geometric Uncertainties in Polysilicon MEMS: A Genetic Algorithm and POD-Kriging Surrogate Modeling Approach
by Ananya Roy, Francesco Rizzini, Gabriele Gattere, Carlo Valzasina, Aldo Ghisi and Stefano Mariani
Micromachines 2025, 16(2), 127; https://doi.org/10.3390/mi16020127 - 23 Jan 2025
Viewed by 895
Abstract
On the way toward MEMS miniaturization, the quantification of geometric uncertainties stands as a primary challenge. In this paper, an approach that combines genetic algorithms and proper orthogonal decomposition with kriging surrogate modeling was proposed to accurately predict over-etch measures through an on-chip [...] Read more.
On the way toward MEMS miniaturization, the quantification of geometric uncertainties stands as a primary challenge. In this paper, an approach that combines genetic algorithms and proper orthogonal decomposition with kriging surrogate modeling was proposed to accurately predict over-etch measures through an on-chip test device. Despite being fabricated on a single wafer under nominally identical manufacturing conditions, MEMS can display different responses under the same actuation, due to a different characteristic geometry. It is shown that the uncertainties, given in terms of over-etch values, were not only different from die to die but also within the same die, depending on the local geometric features of the device. Therefore, the proposed method provided an alternative solution to estimate the uncertainties in MEMS devices, relying only on the capacitance–voltage response. A statistical analysis was carried out based on a batch of devices tested in the laboratory. These tests and the estimation procedure allowed us to quantify the mean values of the over-etch relative to the target as +12.2 % at comb fingers, +10.0 % at the supporting springs, and −4.8 % at stoppers, showing noteworthy variability induced by the environment. Full article
(This article belongs to the Special Issue The 15th Anniversary of Micromachines)
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10 pages, 8031 KB  
Article
An All-in-One Testing Chip for the Simultaneous Measurement of Multiple Thermoelectric Parameters in Doped Polysilicon
by Lei Shi, Na Zhou, Jintao Wu, Meng Shi, Yizhi Shi, Cheng Lei and Haiyang Mao
Micromachines 2025, 16(2), 116; https://doi.org/10.3390/mi16020116 - 21 Jan 2025
Viewed by 1172
Abstract
Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters—such as the Seebeck coefficient, thermal conductivity, and electrical resistivity—of polysilicon with various doping conditions is essential for designing and [...] Read more.
Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters—such as the Seebeck coefficient, thermal conductivity, and electrical resistivity—of polysilicon with various doping conditions is essential for designing and fabricating high-performance thermopile sensors. This work presents an all-in-one testing chip that incorporates double-layer thermoelectric structures on a suspended membrane-based supporting layer, with polysilicon constituting at least one of these thermoelectric layers. By employing a differential calculation approach in conjunction with thermal imaging methods, we could simultaneously measure various thermoelectric parameters—including resistivity, the Seebeck coefficient, and thermal conductivity—of polysilicon under different doping conditions. Furthermore, the method proposed in this study provides a means for accurately obtaining thermoelectric parameters for other materials, thereby facilitating the design and optimization of thermoelectric devices. Full article
(This article belongs to the Special Issue MEMS Sensors and Actuators: Design, Fabrication and Applications)
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25 pages, 11726 KB  
Article
Low-Carbon Transformation of Polysilicon Park Energy Systems: Optimal Economic Strategy with TD3 Reinforcement Learning
by Shurui Hu, Chengwenxuan Zhao, Jialu Wu, Haiyang Bian, Yongkai Liu and Mingtao Li
Processes 2025, 13(1), 268; https://doi.org/10.3390/pr13010268 - 18 Jan 2025
Cited by 1 | Viewed by 1538
Abstract
To achieve the low-carbon transition in polysilicon production, this study proposes and validates a low-carbon economic dispatch strategy for a renewable hydrogen production and storage system in polysilicon parks based by TD3 algorithm. The study uses XGBoost to construct a surrogate model that [...] Read more.
To achieve the low-carbon transition in polysilicon production, this study proposes and validates a low-carbon economic dispatch strategy for a renewable hydrogen production and storage system in polysilicon parks based by TD3 algorithm. The study uses XGBoost to construct a surrogate model that reflects the nonlinear physical characteristics of the electrolyzer. Through a comparative analysis of operating strategies in five scenarios and sensitivity assessments of key parameters, complemented by comparisons with dispatch results from the DDPG and DQN algorithms, the effectiveness of the coupled operating strategy for electrolyzers, energy storage, and hydrogen storage devices is fully validated. This highlights the critical role of the TD3 algorithm in strengthening the robustness of the energy system under double-end source-load uncertainties. The results show that batteries flexibly adjust to the time-of-use electricity price, and the coordinated operation of the hydrogen storage devices as well as electrolyzers stabilize the electrolyzer efficiency, reducing the total system cost by 0.027% compared to fixed condition equipment models. The TD3 algorithm shows significant advantages in optimized dispatch, reducing the average daily operating cost by 0.6% and 1.2%, respectively, compared to the DDPG and DQN algorithms, and reducing the carbon emission cost by 2.0% and 12.0%, respectively. A comprehensive analysis shows that the proposed model reduces daily carbon emissions by 29.3% compared to the original system, but also introduces cost pressure, mainly due to the high operating costs of renewable energy equipment such as solar panels. This study provides a practical solution for renewable energy management. Full article
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17 pages, 11338 KB  
Article
Fabrication and Electrical Characterization of Low-Temperature Polysilicon Films for Sensor Applications
by Filipa C. Mota, Inês S. Garcia, Aritz Retolaza, Dimitri E. Santos, Patrícia C. Sousa, Diogo E. Aguiam, Rosana A. Dias, Carlos Calaza, Alexandre F. Silva and Filipe S. Alves
Micromachines 2025, 16(1), 57; https://doi.org/10.3390/mi16010057 - 31 Dec 2024
Cited by 1 | Viewed by 4403
Abstract
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for various device applications. This work demonstrates, for the first time, the fabrication of [...] Read more.
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for various device applications. This work demonstrates, for the first time, the fabrication of a 200 nm polycrystalline silicon thin film through a metal-induced crystallization process mediated by an AlSiCu alloy at temperatures as low as 450 °C on top of silicon and polyimide (PI) substrates. The resulting polycrystalline film structure exhibits crystallites with a size of approximately 58 nm, forming polysilicon (poly-Si) grains with diameters between 1–3 µm for Si substrates and 3–7 µm for flexible PI substrates. The mechanical and electrical properties of the poly-Si were experimentally conducted using microfabricated test structures containing piezoresistors formed by poly-Si with different dimensions. The poly-Si material reveals a longitudinal gauge factor (GF) of 12.31 and a transversal GF of −4.90, evaluated using a four-point bending setup. Additionally, the material has a linear temperature coefficient of resistance (TCR) of −2471 ppm/°C. These results illustrate the potential of using this low-temperature film for pressure, force, or temperature sensors. The developed film also demonstrated sensitivity to light, indicating that the developed material can also be explored in photo-sensitive applications. Full article
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20 pages, 15181 KB  
Article
Fatigue-Induced Failure of Polysilicon MEMS: Nonlinear Reduced-Order Modeling and Geometry Optimization of On-Chip Testing Device
by Daniel Calegaro, Massimiliano Merli, Giacomo Ferrari and Stefano Mariani
Micromachines 2024, 15(12), 1480; https://doi.org/10.3390/mi15121480 - 8 Dec 2024
Cited by 3 | Viewed by 4530
Abstract
In the case of repeated loadings, the reliability of inertial microelectromechanical systems (MEMS) can be linked to failure processes occurring within the movable structure or at the anchors. In this work, possible debonding mechanisms taking place at the interface between the polycrystalline silicon [...] Read more.
In the case of repeated loadings, the reliability of inertial microelectromechanical systems (MEMS) can be linked to failure processes occurring within the movable structure or at the anchors. In this work, possible debonding mechanisms taking place at the interface between the polycrystalline silicon film constituting the movable part of the device and the silicon dioxide at the anchor points are considered. In dealing with cyclic loadings possibly inducing fatigue failure, a strategy is proposed to optimize the geometry of an on-chip testing device designed to characterize the strength of the aforementioned interface. Dynamic analyses are carried out to assess the deformation mode of the device and maximize the stress field leading to interface debonding. To cope with the computational costs of numerical simulations within the structural optimization framework, a reduced-order modeling procedure for nonlinear systems is discussed, based on the direct parametrization of invariant manifolds (DPIM). The results are reported in terms of maximum stress intensification for varying geometry of the testing device and actuation frequency to demonstrate the accuracy and computational efficiency of the proposed methodology. Full article
(This article belongs to the Special Issue The 15th Anniversary of Micromachines)
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13 pages, 3065 KB  
Article
Deposition Contribution Rates and Simulation Model Refinement for Polysilicon Films Deposited by Large-Sized Tubular Low-Pressure Chemical Vapor Deposition Reactors
by Jicheng Zhou, Jianyong Zhan, Bowen Lv, Yan Guo and Bingchun Jiang
Materials 2024, 17(23), 5952; https://doi.org/10.3390/ma17235952 - 5 Dec 2024
Cited by 2 | Viewed by 1076
Abstract
Tunnel oxide passivating contact cells have become the mainstream form of high-performance photovoltaic cells; however, the key factor restricting the further improvement of tunnel oxide passivating contact cell performance lies in the deposition process technology of high-quality polysilicon films. The experimental optimization cost [...] Read more.
Tunnel oxide passivating contact cells have become the mainstream form of high-performance photovoltaic cells; however, the key factor restricting the further improvement of tunnel oxide passivating contact cell performance lies in the deposition process technology of high-quality polysilicon films. The experimental optimization cost for the deposition of large-sized polysilicon films in low-pressure chemical vapor deposition reactors is enormous when conducted in the temperature range of 800–950 K; hence, the necessity to develop effective computer simulation models becomes urgent. In recent years, our research group has conducted two-dimensional simulation research on large-sized, low-pressure chemical vapor deposition. This article focuses on analyzing the influence of gas-phase chemical reactions on the contribution rate of polysilicon film deposition under a mixed atmosphere of H2 and SiH4. The findings indicate that when using SiH4 as the precursor reactants with a gas pressure not exceeding 100 Pa, SiH4 contributes more than 99.6% to the deposition of polysilicon films, while the contribution rate of intermediates from chemical reactions to film deposition is less than 0.5% with 860–900 K. The influence of temperature on the contribution rate of gas-phase intermediates is negligible. It is found that simulating complex multi-step chemical reactions is highly resource-intensive, making it difficult to achieve the three-dimensional simulations of large-sized tubular LPCVD reactors. Based on the in-depth analysis of the mechanism and simulation results, a simplified model neglecting the complex multi-step chemical reaction process has been proposed. Through employing this refined and simplified model, the two-dimensional simulation of the polysilicon thin films deposition process in the large-sized tubular low pressure chemical vapor deposition reactor will become more effective and resource efficient. Full article
(This article belongs to the Section Thin Films and Interfaces)
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