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TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power

  • Rana Mahmoud,
  • Narayanan Madathumpadical and
  • Hasan Al-Nashash
J. Low Power Electron. Appl.2019, 9(4), 29;https://doi.org/10.3390/jlpea9040029

22 September 2019

Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system efficiency and lifetime. The BULK metal oxide semiconductor field-effect transisto...

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