Search Results (953)

Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms include diffusion current, Shockley–Read–Hall (SRH) generation–recombination, trap-assisted tunneling, band-to-band tunneling, and surface leakage, each examined with respect to its physical origin and characteristic signatures. Reduction strategies are categorized into thermal management approaches, surface passivation techniques including atomic-layer-deposited aluminum oxide (ALD Al₂O₃), guard ring architectures (attached, floating, and combined configurations), gettering and defect engineering methods, doping profile optimization, bias voltage management, and advanced device architectures such as pinned photodiodes and black silicon structures. A classification table organizes all the reviewed literature by material system, reduction technique, and key findings. Special emphasis is placed on silicon, germanium, III–V compounds, and emerging material photodiodes relevant to near-infrared detection, CMOS imaging, single-photon avalanche diodes (SPADs), and Time-of-Flight (ToF) applications. Full article

Single-event effects (SEEs) present a significant challenge to the radiation reliability of integrated circuits. Conventional SEE analysis methods for single-photon avalanche diode (SPAD) devices primarily rely on Sentaurus Technology Computer-Aided Design (TCAD) numerical simulation, which is computationally intensive and time-consuming. In this study, we propose a generalized deep learning (DL) model, using a silicon-based SPAD device with a double-junction double-buried-layer (DJDB) structure fabricated in 180 nm CMOS process as the research subject. By incorporating key parameters that influence SEEs as model inputs, the proposed approach enables rapid prediction of critical parameter metrics, including transient current peaks and dark count rates. Experimental results show that the DL model achieves a prediction accuracy of 97.32% for transient current peaks and 99.87% for dark count rates, demonstrating extremely high prediction precision. To further validate the generalization capability of the proposed network, the model is applied to predict the detection performance of the DJDB-SPAD device. The prediction accuracies for four key performance parameters all exceed 97.5%, further confirming the accuracy and robustness of the developed model. Meanwhile, compared with the conventional Sentaurus TCAD simulation method, the proposed method achieves a 336-fold improvement in computational efficiency. Overall, this method realizes the dual advantages of high precision and high efficiency, which provides an efficient and accurate technical solution for the rapid characteristic analysis and reliability evaluation of SPAD devices under single-event effects (SEEs). Full article

This work presents the development and experimental characterization of a compact ultraviolet (UV) telescope based on silicon photomultipliers (SiPMs) designed for the detection of faint atmospheric optical tracks. Such transient optical phenomena include meteors, transient luminous events (TLEs), space debris reentries, and other faint atmospheric emissions. Nuclearite-induced atmospheric emission is considered as a benchmark case for evaluating the expected signal levels of rare luminous track events. We detail the fabrication, assembly, and testing of the SiPM sensor array, comprising parallel Geiger-mode avalanche diodes with high fill factor and photon detection efficiency, alongside custom readout electronics using self-triggering ASICs, precision optical components, and a stable mechanical mount. This photon-counting telescope provides a compact and mechanically robust alternative to conventional PMT-based systems, with demonstrated capability for detecting low-light atmospheric tracks under controlled laboratory conditions. Full article

This review examines the transformative interplay between computing chips and Artificial Intelligence (AI), driving a revolution across various industries. First, the broader artificial intelligence and semiconductor ecosystem is analyzed, including hardware manufacturers, software frameworks, and system integration. Next, the development prospects are examined, revealing current challenges such as power consumption, manufacturing complexity, supply chain constraints, and ethical considerations. Further discussion focuses on cloud-edge collaboration in relation to system architecture and workload allocation strategies. Then, cutting-edge AI technologies are analyzed, and key insights are summarized. Finally, the overall trends in artificial intelligence and the chip industry are summarized, clearly presenting the findings for the future and making a unique contribution to this review. Full article

The on-chip detection of circularly polarized light is pivotal for advancing applications in quantum optics, information processing, and spectroscopic sensing. However, conventional chiral metasurfaces often suffer from complex multilayer fabrication, material incompatibility, or modest performance, hindering their integration with photonic circuits. Here, we introduce a monolithic all-silicon metasurface that overcomes these limitations through a singular structural innovation. By strategically truncating four corners of a conventional Z-shaped meta-atom, we induce a hybridization of optical modes that profoundly enhances chiral light–matter interaction. This deliberately engineered perturbation yields a colossal circular dichroism with an extinction ratio exceeding 66 dB, a performance that surpasses existing state-of-the-art designs by approximately three orders of magnitude. Furthermore, the proposed metasurface exhibits remarkable fabrication robustness, owing to its single-layer architecture and CMOS-compatible material. We demonstrate that this exceptional metasurface can be directly integrated with a Mercury Cadmium Telluride (MCT) photodetector to form a highly efficient, compact circular polarization detector. Our work provides a simple yet powerful paradigm for creating high-performance chiral photonic devices, paving the way for their widespread adoption in integrated optoelectronics. Full article

We propose a silicon carbide (3C-SiC) periodic grating structure based on quasi-bound states in the continuum (q-BICs), which is used to significantly enhance the second-order optical nonlinear effect, including second-harmonic generation (SHG) and sum-frequency generation (SFG). By introducing a four-segment sub-wavelength grating on the SiC thin film and tailor the dimension, the structure successfully excites two q-BIC modes with ultra-high Q factor (resonant wavelengths at 1713.2 nm and 1804.6 nm respectively), realizing enhanced localization and nonlinear interaction of the strong light field. The simulation results show that under oblique incidence, the structure significantly enhances SFG efficiency and exhibits strong robustness to variations in key structural parameters. In addition, the study also reveals the coexistence of forward and backward SHG, and resonant wavelength tuning can be achieved by adjusting the structure dimension. This work not only provides a new path to enhance the nonlinear conversion efficiency of SiC thin films and solve the problem of difficult phase matching, but also lays the theoretical and technical foundation for the development of compact, efficient and integrated SiC-based nonlinear photonic devices. Full article

Chiral bound states in the continuum (BIC) metasurfaces have emerged as a promising platform for enhancing light–matter interactions, which have potential applications in advanced photonic and quantum information devices. However, simultaneously achieving near-perfect circular dichroism and highly efficient nonlinear conversion with highly symmetric structures in metasurfaces remains an open challenge. In this work, we design a $C_4$-symmetric chiral metasurface composed of eight elliptical silicon nanorods on a ${\mathrm{SiO}}_2$ substrate, where monocrystalline silicon is used as the nonlinear optical material. By combining simulations and nonlinear time-domain coupled-mode theory (TCMT), we discovered that both the optimal chirality and the nonlinear conversion efficiency can be attained simultaneously due to the critical coupling between the metasurface mode and the quasi-BIC mode. Meanwhile, a near-perfect circular dichroism (CD = 0.99) and a high nonlinear conversion efficiency of $7\times {10}^{-5}$ under a radiation intensity of $5{\mathrm{kW}/\mathrm{cm}}^2$ are numerically achieved due to the robustness of bound states in the continuum. This work offers a promising route toward high-performance chiral nonlinear photonic components, which is of great importance for the development of ultra-compact optical devices such as circular polarization detectors, chiral sensors, and nonlinear photonic chips for integrated optical and quantum information systems. Our research not only contributes to the fundamental understanding of chiral metasurfaces but also provides a practical approach for achieving high-efficiency nonlinear optical devices. Full article

As the exponential growth in advanced compute workloads drives intra-datacenter interconnects to ever increasing bitrates, optical networking equipment has risen to the challenge by shifting from NRZ signaling to bandwidth efficient modulation methods such as PAM4. As these modulation schemes introduce an inherent SNR penalty, maintaining low bit error rates (BER) forces optical links to operate at significantly higher optical powers. However, increasing the optical power leads to photodetectors reaching one of their fundamental bottlenecks caused by the space-charge effect, limiting their ability to provide a high-speed response under high-power illumination. This work presents the design, fabrication, and characterization of a waveguide-integrated photodiode with dual optical inputs (DIPD) designed to overcome this limitation. Specifically, we demonstrate that combining a dual-fed architecture with targeted cross-sectional geometric optimizations effectively distributes the photocurrent density to delay the onset of space-charge saturation. Experimental validation demonstrates a high responsivity of ≈0.91 [A/W] (for O-band wavelengths) and a large electro-optic bandwidth (EOBW) of ≈58 [GHz], all under high-power illumination and CMOS driving voltages. Full article

A monolithic digital Silicon Photomultiplier (SiPM) featuring 1024 microcells with a 30-micrometer pitch and a 50% fill factor has been designed in a 110-nanometer CMOS image sensor technology. The device under consideration integrates both SPAD sensors and front-end electronics in the same substrate. It can count up to 1024 photons in less than 22 ns, while assigning timestamps to the first and last detected photons with a time resolution of less than 100 ps. A parallel counter structure combined with a fast adder tree provides photon counting in digital form with low latency, whereas a carefully balanced fast NAND tree ensures a fixed-pattern time uncertainty not exceeding 26 ps. The architecture incorporates in-pixel memory for individual cell disabling and configurable thresholding on the timing signal for noise mitigation. In order to optimize the fill factor, a part of the electronics is placed outside the array, while the most sensitive elements of the timing and counting circuits are laid out close to the sensor, in the SPAD array. A serial readout is employed to provide a single output connection per SiPM, thereby simplifying system integration. Full article

A high-sensitivity and high-stability on-chip temperature sensor based on a silicon-on-insulator (SOI) platform is proposed and experimentally demonstrated in this work. The device employs a ring-assisted asymmetric Mach–Zehnder interferometer (RAMZI), enhancing both temperature sensitivity and measurement stability. Broadband, wavelength-insensitive components, including multimode interference couplers and adiabatic 3 dB splitters, reduce the influence of laser wavelength fluctuations and mitigate interference errors caused by environmental perturbations. The sensor achieves a temperature sensitivity of 108.74 pm/K, corresponding to an approximately 40% improvement over a conventional AMZI with the same footprint. Moreover, a wavelength drift of only 18 pm over 45 min demonstrates excellent stability and robustness. This work provides an effective solution for highly sensitive and stable on-chip temperature sensing in photonic integrated systems. Full article

Artificial intelligence computing systems increasingly demand high-bandwidth, high-extinction-ratio, chip-to-chip optical transceivers. Silicon microring modulators (MRMs) are attractive for such transmitters due to their compact footprint and wavelength-division multiplexing capability. However, for a specified extinction ratio, the optical bandwidth for high-Q MRMs and the driver’s RC time constant prevent conventional single-segment MRM drivers from supporting 100 GBaud class PAM4 transmission. This work presents a broadband driver exploiting the feedforward technique for dual-segment MRMs. It extends electro-optical bandwidth while maintaining a high Q-factor and extinction ratio. The input signal is split into low- and high-frequency components that drive the long and short segments of the MRM, respectively. The long segment uses a broadband low-pass driver, whereas the short segment employs a driver with a programmable bandpass response near the Nyquist frequency. The design space is obtained from an equivalent electro-optical model under constant group-delay constraints. Simulations at 1310 nm show that the 3 dB electro-optical bandwidth improves from ~50 to >70 GHz and that a 200 Gb/s PAM4 optical eye diagram exhibits an open eye; the energy efficiency is 1.44 pJ/bit, and the extinction ratio improves from 2 dB to 4.1 dB. The proposed technique provides a tunable electro-optical co-design approach for high-bandwidth-density, high-extinction-ratio silicon photonic transmitters. Full article

We introduce a novel cross-coupled self-coupled optical waveguide (CC-SCOW) architecture that leverages coupled-resonator-induced transparency (CRIT) via a cross-coupling mechanism. This design addresses key limitations of conventional self-coupled optical waveguides (SCOWs), particularly their restricted spectral tunability and fixed interference characteristics arising from direct coupling. For the first time, we demonstrate and analyze the CRIT behavior of the CC-SCOW structure, showing that it offers enhanced design flexibility, compactness, and improved spectral performance. Through analytical modeling and finite-difference time-domain (FDTD) simulations, we show that CC-SCOWs enable tunable, narrowband filtering with improved free spectral range (FSR) and phase response. These features make the CC-SCOW architecture highly suitable for advanced photonic integrated circuits requiring high selectivity, tunability, and miniaturization. Full article

Percentage depth–dose (PDD) distributions are fundamental to characterizing radiation beams in radiotherapy. This review provides an overview of both methods and sensor technologies for measuring PDD in photon, electron, proton, and carbon-ion beams. We summarize conventional dosimetry techniques, including water-phantom scanning with ionization chambers (cylindrical and parallel-plate) and radiochromic film, and discuss their strengths (established accuracy, calibration traceability) and limitations (volume averaging, delayed readout). We then examine emerging sensor technologies designed to improve spatial resolution, speed, and radiation hardness: multi-layer ionization chambers and Faraday cups for one-shot PDD acquisition; scintillator-based detectors (liquid, plastic, and fiber-optic) enabling real-time and high-resolution depth–dose measurements; advanced semiconductor detectors including silicon carbide diodes; as well as novel approaches such as ionoacoustic range sensing for proton beams. For each modality and detector type, we emphasize clinical relevance, measurement accuracy, spatial resolution, radiation durability, and suitability for high dose-per-pulse environments (e.g., FLASH radiotherapy). Current challenges, such as detector response in regions of steep dose gradient, saturation or recombination at ultra-high dose rates, and energy-dependent sensitivity in mixed radiation fields, are analyzed in detail. We also highlight the limitations of each technique and discuss ongoing improvements and prospects for clinical implementation. In summary, no single detector technology fully satisfies all requirements for fast, high-accuracy, high-resolution, radiation-hard PDD measurement, but the integration of emerging sensor innovations into clinical dosimetry promises to enhance the precision and efficiency of radiotherapy quality assurance. Full article

In this paper, an innovative design of a silicon spiral drift detector (SDD) has been proposed. In this design, gaps under the SiO₂ layer between the cathode rings are kept constant, with a minimum value to reduce the surface leakage current. The cathode pitch profile $\mathrm{P}\left(\mathrm{r}\right)$ as a function of radius $\mathrm{r}$ is allowed to change in an arbitrary way to achieve the optimum field distribution. The concept, design considerations, modeling and electrical simulations have been carried out for this novel structure with a hexagonal spiral silicon drift detector. Using one-dimensional analyses, we obtain the exact solution of the spiral design $\mathrm{r}=\mathrm{r}\left(\mathrm{\theta }\right)$ with a near-arbitrary pitch profile $\mathrm{P}\left(\mathrm{r}\right)={\mathrm{P}}_1{\left({\displaystyle \frac{\mathrm{r}}{{\mathrm{r}}_1}}\right)}^{{\displaystyle \frac{1}{\mathrm{\eta }}}}$, with $\mathrm{\eta }$ as an arbitrary real number. We also obtained the electric potential and field profiles on both surfaces of the detector. Using a Technology Computer-Aided Design (TCAD) tool, we made 3D simulations of the detector’s electrical properties. The hexagonal spiral silicon drift detector has excellent electrical properties: a uniform electric field, smooth distribution of electric potential and electron concentration, and a clear electron drift channel. The distributions of the electric field, electric potential, and electron concentration are symmetrical and smooth, which is beneficial for applications in photon sciences (X-ray) and safeguards and homeland security (particle radiation). The theoretical work and simulation results serve as solid foundations for the detector design and the expansion of semiconductor technology. Full article

Silicon photonic integrated circuit (Si-PIC) components/devices based on silicon-on-insulator (SOI) waveguides have become critical components in modern optoelectronic information systems. This investigation systematically examines optical propagation losses (OPLs) induced by the sidewall roughness (SWR) of a waveguide through comparative analysis of two scattering-loss theoretical frameworks: the SWR-improved Payne–Lacey (P-L) three-dimensional (3-D) formalism and Hörmann’s 3-D perturbation model. Crucially, our computational results identify SWR = 10 nm as the convergence threshold where both models exhibit consistent OPL predictions across waveguide architectures. Single-mode SOI rib waveguides with 0.5 µm high ribs on 2.0 µm silicon film and a 2.0 μm BOX layer were designed and fabricated using the classic ICP-RIE technique. Furthermore, SWRs of 28 nm were obtained with confocal laser scanning microscopy for SOI waveguides, leading to OPLs of 2.66 and 2.67 dB/cm for TE and TM modes, respectively, from the 2-D SWR-enhanced P-L model, and 1.7 and 1.9 dB/cm, respectively, from the Hörmann 3-D model. Finally, the average experimental result of OPL for the same waveguide was 2.61 dB/cm, showing a strong agreement with the numerical values of the SWR-improved P-L 3-D formalism, providing a robust framework for optimizing industrial-grade SOI waveguide-based PIC devices/components. Full article