Search Results (3)

In this work, we propose our newly developed wafer-type plasma monitoring sensor based on a floating-type double probe method that can be useful for two-dimensional (2D) in situ plasma diagnosis within a semiconductor processing chamber. A key achievement of this work is the first realization of an ultra-thin plasma monitoring sensor with a system thickness of ~1.4 mm, which supports a fully automated robot arm transfer capability for in situ plasma diagnosis. To the best of our knowledge, it is the thinnest accomplishment among all wafer-type plasma monitoring sensors. Our proposed sensor is assembled with two Si wafers and SiO₂-based probes; accordingly, it makes it possible to monitor the actual dynamics of processing plasmas under electrostatic chucking (ESC) conditions. Also, it allows for the prevention of chamber contamination issues after continuously exposing the radio frequency (RF) to various processing gases. Using a test-bed chamber, we successfully demonstrated the feasibility and system performance of the proposed sensor, including robot arm transfer capability, vacuum and thermal stress durability, and data integrity and reproducibility. Consequently, compared with the conventional plasma diagnostic tools, we expect that our proposed sensor will be highly beneficial for tool-to-tool matching (TTTM) and/or for studying various plasma-related items by more accurately providing the parameters of processing plasmas, further saving both time and manpower resources required for preventive maintenance (PM) routines as well. Full article

During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by decreasing the voltage and temperature changes of the electrostatic chuck and generating a plasma sheath with a continuous discharge sequence of radio-frequency plasma. The gas pressure and flow rate also affect the number of wafer edge particles. Experimental results were used to optimize the equipment parameters to reduce edge particle contamination and improve edge wafer defects after dry etching. Full article

The temperature of electrostatic chuck (ESC), a wafer susceptor used in semiconductor etch equipment, must accurately control the temperature of wafers during the etching process to obtain uniform and consistent process results. Failure to control the precise temperature can lead to rejection from the high-volume semiconductor manufacturing site (one of the most high-cost equipment components which can be repaired for its extended use). In this research, we propose a wireless-type on-wafer temperature monitoring system (OTMS) for easier and faster temperature monitoring to help temperature measurements of the repaired ESC in atmospheric and vacuum conditions. The proposed method, which can effectively measure the temperature distribution of the ESC, should manage the operational condition of ESC. A successful demonstration of the 300 mm size OTMS for the repaired parts enhanced the quality assurance with a temperature deviation of ±3.83 °C over 65 points of measurement. Full article