Search Results (1,737)

In this study, we successfully prepared silver electrodes through a silver mirror reaction. By carefully regulating the amount of ammonia complexing agent in the silver–ammonia solution, we effectively suppressed the decomposition of the plating solution while reducing the surface roughness of silver films from 9.22 nm to 4.42 nm. The electrical conductivity of our solution-processed silver layers was nearly one order of magnitude higher than that of conventional inkjet-printed silver electrodes. When applied as source-drain electrodes in organic field-effect transistors (OFETs), these electrodes enabled devices with an average mobility of 0.13 cm²/(V·s) and remarkably low mobility variation of only 8.7%. Furthermore, we modified the silver electrodes through chemical platinum plating, achieving a significant 0.74 eV alteration in work function, which demonstrates the great potential of chemical plating for surface functionalization in solution-processed organic electronic devices. Full article

This paper presents a physics-guided machine learning (PGML) approach to model the I–V characteristics of GaN current aperture vertical field effect transistors (CAVET). By adopting the method of transfer learning and the shortcut structure, a physically guided neural network model is established. The shallow neural network with $tanh$ as the basis function is combined with a hypernetwork that dynamically generates its weight parameters. The influence of transconductance is added to the loss function. This model can synchronously predict the output and transfer characteristics of the device. Under the condition of small samples, the prediction error is controlled within 5%, and the $R^2$ value reaches above 0.99. The proposed PGML approach outperforms conventional approaches, ensuring physically meaningful and robust predictions for device optimization and circuit-level simulations. Full article

Graphene was directly grown on SiO₂/Si substrates using microwave plasma-enhanced chemical vapor deposition (PECVD) to investigate how synthesis-driven variations in structure and doping influence carrier transport. The effects of synthesis temperature, plasma power, deposition time, gas flow, and pressure on graphene’s structure and electronic properties were systematically studied. Raman spectroscopy revealed non-monotonic changes in layer number, defect density, and doping levels, reflecting the complex interplay between growth, etching, and self-doping mechanisms. The surface morphology and conductivity were assessed by atomic force microscopy (AFM). Charge carrier mobility, extracted from graphene-based field-effect transistors, showed strong correlations with Raman features, including the intensity ratios and positions of the Two-dimension (2D) and G peaks. Importantly, mobility did not correlate with defect density but was linked to reduced self-doping and a weaker graphene–substrate interaction rather than intrinsic structural disorder. These findings suggest that charge transport in PECVD-grown graphene is predominantly limited by interfacial and doping effects. This study offers valuable insights into the synthesis–structure–property relationship, which is crucial for optimizing graphene for electronic and sensing applications. Full article

We systematically investigate the combined impact of process variation effects (PVEs), metal gate work function fluctuation (WKF), and random dopant fluctuation (RDF) on the key electrical characteristics of sub-1-nm technology node gate-all-around silicon nanosheet complementary field-effect transistors (GAA Si NS CFETs). Through comprehensive statistical analysis, we reveal that the interplay of these intrinsic and extrinsic sources of variability induces significant fluctuations in the off-state leakage current across both N-/P-FETs in GAA Si NS CFETs. The sensitivity to process-induced variability is found to be particularly pronounced in the P-FETs, primarily due to the enhanced parasitic conduction associated with the bottom nanosheet channel. Given the correlated nature of PVE, WKF, and RDF factors, the statistical sum (RSD) of the fluctuation for each factor is overestimated by less than 50% compared with the simultaneous fluctuations of PVE, WKF, and RDF factors. Furthermore, although the static power dissipation remains relatively small compared to dynamic and short-circuit power components, it exhibits the largest relative fluctuation (approximately 82.1%), posing critical challenges for low-power circuit applications. These findings provide valuable insights into the variability-aware design and optimization of GAA NS CFET device fabrication processes, as well as the development of robust and reliable CFET-based integrated circuits for next-generation technology nodes. Full article

The integration of organoids with biosensors serves as a miniaturized model of human physiology and diseases, significantly transforming the research frameworks surrounding drug development, toxicity testing, and personalized medicine. This review aims to provide a comprehensive framework for researchers to identify suitable technical approaches and to promote the advancement of organoid sensing towards enhanced biomimicry and intelligence. To this end, several primary methods for technology integration are systematically outlined and compared, which include microfluidic integrated systems, microelectrode array (MEA)-based electrophysiological recording systems, optical sensing systems, mechanical force sensing technologies, field-effect transistor (FET)-based sensing techniques, biohybrid systems based on synthetic biology tools, and label-free technologies, including impedance, surface plasmon resonance (SPR), and mass spectrometry imaging. Through multimodal collaboration such as the combination of MEA for recording electrical signals from cardiac organoids with micropillar arrays for monitoring contractile force, these technologies can overcome the limitations inherent in singular sensing modalities and enable a comprehensive analysis of the dynamic responses of organoids. Furthermore, this review discusses strategies for integrating strategies of multimodal sensing approaches (e.g., the combination of microfluidics with MEA and optical methods) and highlights future challenges related to sensor implantation in vascularized organoids, signal stability during long-term culture, and the standardization of clinical translation. Full article

More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits. Among these devices, ISFET transistors—Ion-Sensitive Field-Effect Transistors—have the capacity of integrating ion-sensitive layers together with field effect transistors of ultimate generations. Recent studies have indicated that nanoporous materials deposited or grown within the transistor gate space offer a dual advantage—a favorable environment for an optimal capture of liquid state receptors through capillary effects, but also of direct anchoring of these nanoporous structures on a Si wafer. This article aims to review the constructive evolutions of ISFET transistors, along with some newer nanowire devices, as well as their co-integration techniques with nanoporous materials, which are beneficial in the optimization of many chemosensors but of enzymatic biosensors in particular. Full article

Discrete Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are characterized by their lower parasitic parameters and single-chip design, enabling them to achieve even faster switching speeds. However, the rapid rate of change in voltage (dv/dt) and current (di/dt) can lead to overshoot and oscillation in both voltage and current, ultimately limiting the performance of high-frequency operations. To address this issue, this paper presents a high-switching-frequency motor controller that utilizes discrete SiC MOSFETs. To achieve a high switching frequency for the controller while minimizing current oscillation and voltage overshoot, a novel electronic system architecture is proposed. Additionally, a passive driving circuit is designed to suppress gate oscillation without the need for additional control circuits. A new printed circuit board (PCB) laminate stack featuring low parasitic inductance, high current conduction capacity, and efficient heat dissipation is also developed using advanced wiring technology and a specialized heat dissipation structure. Compared to traditional methods, the proposed circuit and bus design features a simpler structure, a higher power density, and achieves a 13% reduction in current overshoot, along with a 15.7% decrease in switching loss. The silicon carbide (SiC) controller developed from this research has successfully undergone double-pulse and power testing. The results indicate that the designed controller can operate reliably over extended periods at a switching frequency of 50 kHz, achieving a maximum efficiency of 98.2% and a power density of 9 kW/kg (10 kW/L). The switching frequency and quality density achieved by the controller have not been observed in previous studies. This controller is suitable for use in the development of new energy electrical systems. Full article

Nano-sized particles of semiconducting lead sulfide and selenide and their 2D thin layers show high potential in applications, such as field-effect transistors, photodetectors, solar cells, and thermoelectric devices. The generation of PbS and PbSe nanobars and nanocubes is evoked by in situ electron beam treatment, leading to the formation of thin, extended 2D nanolayers. The initial single crystals are decomposed via sublimation of PbS and PbSe in terms of molecular and atomic fragments, which finally condense on the cold substrate to form nanostructures. The fragments in the gas phase were proven using mass spectrometry. In the case of PbS, Pb⁺ and PbS⁺ species could were detected, whereas PbSe disintegrated into Pb⁺, Se₂⁺, and PbSe⁺. The threshold current that initiates fragmentation increases from PbTe via PbSe up to PbS, which is in line with the increasing crystal formation energies. The uniform orientation of independently formed nanoparticles on the macroscopic scale can be explained by an external electric field acting on emerging dipolar nanospecies. The external dipole field originates from the sputtered mother crystal, where the electron flux is initiated; thus, a current arises between the crystal’s hot and cold ends. On the contrary, in small single crystals, due to the lack of sufficient charge carriers, only local material excavation is detected instead of extended depletion and subsequent nanoparticle deposition. This fragmentation process may represent a new preparation route that provides lead chalcogenide nanofilms that are free of contamination or surfactant participation, which are typical drawbacks associated with the application of wet chemical methods. Full article

The bulk linearization technique is a design strategy used to extend the linear region of a metal oxide semiconductor field effect transistor (MOSFET) by increasing its saturation voltage through a composite structure and a gate biasing circuit. This allows us to develop compact and flexible pseudo-resistor elements for integrated circuit designs. In this paper we propose a new simple yet effective design approach, focused on the biasing circuit, that optimizes area, offset, and power consumption without altering the design complexity of the original solution. Post-layout simulations verify the presented design strategy, which is then applied for designing a band-pass filter for neural action potential acquisition. Results of harmonic distortion and noise analysis strengthen the validity of the proposed strategy. Full article

Amorphous indium gallium zinc oxide (a-IGZO) is widely used as an oxide semiconductor in the electronics industry due to its low leakage current and high field-effect mobility. However, a-IGZO suffers from notable limitations, including crystallization at temperatures above 600 °C and the high cost of indium. To address these issues, nitrogen-doped zinc oxynitride (ZnON), which can be processed at room temperature, has been proposed. Nitrogen in ZnON effectively reduces oxygen vacancies (V_O), resulting in enhanced field-effect mobility and improved stability under positive bias stress (PBS) compared to IGZO. In this study, selective deep ultraviolet femtosecond (DUV fs) laser annealing was applied to the channel region of ZnON thin-film transistors (TFTs), enabling rapid threshold voltage (Vth) modulation within microseconds, without the need for vacuum processing. Based on the electrical characteristics of both Vth-modulated and pristine ZnON TFTs, an NMOS inverter was fabricated, demonstrating reliable performance. These results suggest that laser annealing is a promising technique, applicable to various logic circuits and electronic devices. Full article

In this paper, a novel Tunneling-Drift-Diffusion Field-Effect Transistor (TDDFET) based on the combination of the quantum tunneling and conventional drift-diffusion mechanisms is proposed for the design of ternary logic circuits. The working principle of the TDDFET is analyzed in detail. Then, the device is packaged as a “black box” based on the table lookup method and further embedded into the HSPICE platform using the Verilog-A language. The basic unit circuits, such as the Standard Ternary Inverter (STI), Negative Ternary Inverter (NTI), Positive Ternary Inverter (PTI), Ternary NAND gate (T-NAND), and Ternary NOR gate (T-NOR), are designed. In addition, based on the designed unit circuits, the combinational logic circuits, such as the Ternary Encoder (T-Encoder), Ternary Decoder (T-Decoder), and Ternary Half Adder (T-HA), and the sequential logic circuits, such as the Ternary D-Latch and edge-triggered Ternary D Flip-Flop (T-DFF), are built, which has important significance for the subsequent investigation of ternary logic circuits. Full article

We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal gates are replaced with distinct functional polymers—PPP-TOS/AcCN, PP-TOS/AcCN, PP-FE(CN)₆³⁻/H₂O, PPP-TCNQ-TOS/AcCN, and PPP-ClO₄/AcCN—which enable precise molecular recognition and discrimination of various target gases. To further enhance sensitivity, the device employs an oppositely doped source region, significantly improving gate control and promoting stronger band-to-band tunneling. This structural modification amplifies sensing signals and improves noise immunity, allowing reliable detection at trace concentrations. Additionally, optimization of the subthreshold swing contributes to faster switching and response times. Thermal stability is addressed by embedding a P-type buffer layer within the buried oxide, which increases thermal conductivity and reduces lattice temperature, further stabilizing device performance. Experimental results demonstrate that the proposed sensor outperforms conventional SOI-TFET designs, exhibiting superior sensitivity and selectivity toward analytes such as methanol, chloroform, isopropanol, and hexane. Beyond gas sensing, the unique polymer-functionalized gate design enables integration of microbial biosensing capabilities, making the platform highly versatile for biochemical detection. This work offers a promising pathway toward ultra-sensitive, low-power sensing technologies for environmental monitoring, industrial safety, and medical diagnostics. Full article

Carbon nanotube field-effect transistors (CNT FETs) are considered strong candidates for next-generation flexible electronics due to their excellent carrier mobility and mechanical flexibility. However, the fabrication of CNT FETs on conventional flexible substrates such as PI or PET is often limited by surface roughness, chemical incompatibility, and poor mechanical robustness, resulting in degraded device performance. In this study, we report the fabrication of buried-gate CNT FETs incorporating Hf_0.5Zr_0.5O₂ as the gate dielectric on mica substrates, which offer high surface flatness, low defect density, and superior mechanical durability. The fabricated devices exhibit outstanding electrical characteristics, including a field-effect mobility of 38.4 cm²/V·s, a subthreshold swing of 93 mV/dec, and a transconductance of 14.2 μS. These results demonstrate the excellent mechanical stability and reliable electrical performance of the proposed devices under bending stress, highlighting their suitability for mechanically demanding flexible electronics applications. Full article

In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 V_pp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article

The unique properties of graphene have allowed for the development of graphene-based field-effect transistors (GFETs) for applications in biosensors and chemical devices. However, the modeling and optimization of GFET performance exhibit great challenges. Herein, we propose a quantum transport simulation model for graphene-based field-effect transistors (GFETs) implemented in the open-source Octave programming language. The proposed simulation model (named SimQ) combines the Landauer–Büttiker formalism with self-consistent Schrödinger–Poisson solutions, enabling reliable simulations of transport phenomena. Our approach agrees well with established models, achieving Landauer–Büttiker transmission and tunneling transmission of 0.28 and 0.92, respectively, which are validated against experimental data. The model can predict key GFET characteristics, including carrier mobilities (500–4000 cm²/V·s), quantum capacitance effects, and high-frequency operation (80–100 GHz). SimQ offers detailed insights into charge distribution and wave function evolution, achieving an enhanced computational efficiency through optimized algorithms. Our work contributes to the modeling of graphene-based field-effect transistors, providing a flexible and accessible simulation platform for designing and optimizing GFETs with potential applications in the next generation of electronic devices. Full article