Search Results (7)

In energy conversion semiconductor devices, radiation damage is directly related to the long-term stability of β-voltaic batteries. In this study, single-crystalline silicon P⁺NN⁺ devices and P⁺-silicon materials with SiO₂ surface passivation were irradiated using a ~70 keV accelerator electron beam in a nitrogen atmosphere for 2 min, 10 min, 1 h, 6 h, and 12 h. The tritium-voltaic output decreased rapidly within the first 2 min of electron beam irradiation and then decayed slowly. After 1 h of irradiation, both the output short-circuit current (Isc) and open-circuit voltage (Voc) remained stable. The effects of the damage were analyzed using typical samples irradiated for 1 h. Neutron reflectometry (NR) was employed as the primary characterization method, while X-ray photoelectron spectroscopy (XPS)—combined with Ar⁺ etching—and secondary ion mass spectrometry (SIMS) were used to verify radiation-induced structural changes at the SiO₂ surface and SiO₂/Si interface. It was found that nitrogen atoms from the atmosphere penetrated the SiO₂ layer to a depth of approximately 5–10 nm, forming a non-stoichiometric SiON structure, without further diffusion into deeper layers. Irradiation significantly increased the thickness of the SiO₂/Si interface transition layer to about 14–18.5 nm, and the SiO₂ structure within this layer became relatively loose. It can be inferred that tritium-voltaic batteries using SiO₂-surface-passivated single-crystalline silicon P⁺NN⁺ devices as energy-conversion units and packaged in a nitrogen atmosphere can stably provide power for 10 years, with an Isc reduction of no more than 12% and a Voc reduction of no more than 6%, excluding the spontaneous decay of tritium. Full article

At the research and production company “PlasmaScience” (Ust-Kamenogorsk, Kazakhstan), a linear plasma generator installation, KAZ-PSI (Kazakhstan Plasma Generator for Plasma Surface Interactions), has been developed and constructed for the study of the interaction of plasma and materials. This article outlines some features of the developed experimental installation designed for the investigation of surface–plasma interactions. The primary components of the linear plasma installation include an electron-beam gun with a LaB6 cathode, a plasma-beam discharge chamber, an interaction chamber, a target device, and an electromagnetic system comprising electromagnetic coils. The KAZ-PSI unit enables continuous plasma generation using hydrogen, deuterium, helium, argon, and nitrogen. The electron density of the plasma is in the range of about 10¹⁷–10¹⁸ m⁻³ and the electron temperature is in the range of 1 to 20 eV. The incident ion energy is regulated by applying a negative potential of up to 2 kV to the target. Experiments on the irradiation of tungsten with helium plasma were carried out using the KAZ-PSI installation for the first time. This article presents the research findings on the structure and properties of tungsten relative to the temperature of helium plasma irradiation. Alterations in roughness, microstructure, hardness, modulus of elasticity, and erosion of the tungsten’s surface following helium plasma irradiation at varying temperatures were examined. The study’s results indicate that helium plasma irradiation induces changes in the morphology of the tungsten’s surface, creating surface relief due to sputtering by helium ions, as well as the formation of blisters. Mechanical testing revealed that after irradiation at T = 500 °C, there was an increase in hardness of up to 10%, and a slight decrease in modulus of elasticity. And after irradiation at T = 900 °C and T = 1300 °C, both hardness and elastic modulus decreased with rising temperature. The tungsten surface erosion evaluation results showed that the degrees of surface erosion increase with increasing target temperature. Full article

In this study, we present an innovative ion-beam doping technique for the controlled modification of the near-surface region of multi-walled carbon nanotubes (MWCNTs) aimed at creating pyridinic and pyrrolic nitrogen defects in their walls. This method involves the irradiation of MWCNTs with nitrogen ions using a high-dose ion implanter, resulting in the incorporation of nitrogen atoms into the nanotube structure. The structural and chemical changes induced by the ion-beam treatment were thoroughly characterized. Scanning electron microscopy (SEM) analysis revealed subtle changes in nanotube morphology, while X-ray diffraction (XRD) measurements exhibited altered peak intensities and a shift in the (002) reflection peak, indicating structural modifications, which correlates with transmission electron microscopy (TEM) data. X-ray photoelectron spectroscopy (XPS) analysis confirmed the successful embedding of nitrogen, mainly in pyridinic and pyrrolic configurations, as evidenced by the presence of corresponding lines in the N1s spectrum. Our findings demonstrate the feasibility of precisely engineering nitrogen defects in MWCNTs using the ion-beam doping technique. This approach is expected to be promising for the use of carbon nanotubes surface-functionalized with nitrogen atoms in the development of new devices for electronics, electrochemistry, catalysis, etc. Full article

The aim of this paper is to test the previously stated hypothesis and several experimental facts about the effect of the ion flux or ion beam current under irradiation with heavy ions on the radiation damage formation in the ceramic near-surface layer and their concentration. The hypothesis is that, when considering the possibilities of using ion irradiation (usually with heavy ions) for radiation damage simulation at a given depth, comparable to neutron irradiation, it is necessary to consider the rate factor for the set of atomic displacements and their accumulation. Using the methods of X-ray diffraction analysis, Raman and UV–Vis spectroscopy, alongside photoluminescence, the mechanisms of defect formation in the damaged layer were studied by varying the current of the Xe²³⁺ ion beam with an energy of 230 MeV. As a result of the experimental data obtained, it was found that, with the ion beam current elevation upon the irradiation of nitride ceramics (AlN) with heavy Xe²³⁺ ions, structural changes have a pronounced dependence on the damage accumulation rate. At the same time, the variation of the ion beam current affects the main mechanisms of defect formation in the near-surface layer. It has been found that at high values of flux ions, the dominant mechanism in damage to the surface layer is the mechanism of the formation of vacancy defects associated with the replacement of nitrogen atoms by oxygen atoms, as well as the formation of ON–VAl complexes. Full article

Using a set of microscopic, spectroscopic, and electrochemical methods, a detailed study of the interrelation between the structural and electrochemical properties of the as-prepared nitrogen-containing multi-walled carbon nanotubes (N-MWCNTs) and their modified derivatives is carried out. It was found that after treatment of nanotubes with hydrochloric acid, their structure is improved by removing amorphous carbon from the outer layers of N-MWCNTs. On the contrary, ion bombardment leads to the formation of vacancy-type structural defects both on the surface and in the bulk of N-MWCNTs. It is shown that the treated nanotubes have an increased specific capacitance (up to 27 F·g⁻¹) compared to the as-prepared nanotubes (13 F·g⁻¹). This is due to an increase in the redox capacitance. It is associated with the reversible Faraday reactions with the participation of electrochemically active pyridinic and pyrrolic nitrogen inclusions and oxygen-containing functional groups (OCFG). Based on the comparison between cyclic voltammograms of N-MWCNTs treated in HCl and with an ion beam, the peaks on these curves were separated and assigned to specific nitrogen inclusions and OCFGs. It is shown that the rate of redox reactions with the participation of OCFGs is significantly higher than that of reactions with nitrogen inclusions in the pyridinic and pyrrolic forms. Moreover, it was established that treatment of N-MWCNTs in HCl is accompanied by a significant increase in the activity of nitrogen centers, which, in turn, leads to an increase in the rate of redox reactions involving OCFGs. Due to the significant contribution of redox capacitance, the obtained results can be used to develop supercapacitors with increased total specific capacitance. Full article

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C²⁺ and 650 keV N²⁺ ions in the fluence range of 1 × 10¹³ to 1 × 10¹⁵ ions cm⁻². The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 10¹³ ions cm⁻² and thereafter increases with an increase in fluence of 600 keV C²⁺ and 650 keV N²⁺ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C²⁺ ion irradiation is more when compared to N²⁺ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C²⁺ ion as compared to N²⁺ ion. Full article

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality. Full article